DS1215S Maxim Integrated Products, DS1215S Datasheet

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DS1215S

Manufacturer Part Number
DS1215S
Description
Manufacturer
Maxim Integrated Products
Datasheet

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DS1215S
Manufacturer:
DS
Quantity:
20 000
FEATURES
DESCRIPTION
The DS1215 Phantom Time Chip is a combination of a
CMOS timekeeper and a nonvolatile memory controller.
In the absence of power, an external battery maintains
the timekeeping operation and provides power for a
CMOS static RAM. The watch keeps track of hun-
dredths of seconds, seconds, minutes, hours, day, date,
month, and year information. The last day of the month
is automatically adjusted for months with less than 31
days, including correction for leap year every four years.
The watch operates in one of two formats: a 12–hour
mode with an AM/PM indicator or a 24–hour mode. The
nonvolatile controller supplies all the necessary support
circuitry to convert a CMOS RAM to a nonvolatile
memory. The DS1215 can be interfaced with either
RAM or ROM without leaving gaps in memory.
All Rights Reserved. For important information regarding
patents and other intellectual property rights, please refer to
Dallas Semiconductor data books.
Keeps track of hundredths of seconds, seconds, min-
utes, hours, days, date of the month, months, and
years
Adjusts for months with fewer than 31 days
Leap year automatically corrected up to 2100
No address space required
Provides nonvolatile controller functions for battery
backup of RAM
Supports redundant batteries for high–reliability
applications
Uses a 32.768 KHz watch crystal
Full 10% operating range
Operating temperature range 0 C to 70 C
Space-saving, 16–pin DIP package and SOIC
Optional industrial temperature range –40 C to +85 C
(IND)
Copyright 1997 by Dallas Semiconductor Corporation.
PIN ASSIGNMENT
PIN DESCRIPTION
X1, X2
WE
BAT1
GND
D
Q
ROM/RAM
CEO
CEI
OE
RST
BAT2
V
V
NOTE: Both pins 5 and 8 must be grounded.
ORDERING INFORMATION
DS1215
DS1215S
DS1215N
DS1215SN
CCO
CCI
BAT1
GND
GND
WE
BAT1
GND
GND
X1
X2
WE
D
Q
X1
X2
D
Q
16–PIN SOIC (300 MIL)
– 32.768 KHz Crystal Connections
– Write Enable
– Battery 1 Input
– Ground
– Data In
– Data Out
– ROM/RAM Select
– Chip Enable Out
– Chip Enable Input
– Output Enable
– Reset
– Battery 2 Input
– Switched Supply Output
– +5 VDC Input
16–PIN DIP (300 MIL)
Phantom Time Chip
1
2
3
4
5
6
7
8
16–pin DIP
16–pin SOIC
16–pin DIP (IND)
16–pin SOIC (IND)
1
2
3
4
5
6
7
8
16
15
14
13
12
10
11
16
15
14
13
12
10
11
9
9
V
V
BAT2
RST
OE
CEI
CEO
ROM/RAM
V
V
BAT2
RST
OE
CEI
CEO
ROM/RAM
CCI
CCO
CCI
CCO
DS1215
032697 1/15
DS1215

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DS1215S Summary of contents

Page 1

... Battery 2 Input V – Switched Supply Output CCO V – +5 VDC Input CCI NOTE: Both pins 5 and 8 must be grounded. ORDERING INFORMATION DS1215 16–pin DIP DS1215S 16–pin SOIC DS1215N 16–pin DIP (IND) DS1215SN 16–pin SOIC (IND) DS1215 DS1215 V CCI V CCO BAT2 RST OE CEI CEO ROM/RAM V ...

Page 2

DS1215 OPERATION The block diagram of Figure 1 illustrates the main ele- ments of the Time Chip. Communication with the Time Chip is established by pattern recognition of a serial bit stream of 64 bits which must be matched by ...

Page 3

When the first write cycle is executed compared to bit 1 of the 64–bit comparison register match is found, the pointer increments to the next location of the comparison register and awaits the next write cycle. ...

Page 4

DS1215 NONVOLATILE CONTROLLER OPERATION The operation of the nonvolatile controller circuits within the Time Chip is determined by the level of the ROM/RAM select pin. When ROM/RAM is connected to ground, the controller is set in the RAM mode and ...

Page 5

RAM/TIME CHIP INTERFACE Figure 3 A0 – RST BAT ROM/TIME CHIP INTERFACE Figure 4 A0 – RST BAT CMOS STATIC RAM ADD DATA I DS1215 10 15 CEO V CCO ...

Page 6

DS1215 TIME CHIP REGISTER DEFINITION Figure 5 REGISTER 12/ 032697 6/ 0.1 SEC 10 SEC 10 MIN A/P OSC ...

Page 7

ABSOLUTE MAXIMUM RATINGS* Voltage on any Pin Relative to Ground Operating Temperature Storage Temperature Soldering Temperature * This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the ...

Page 8

DS1215 AC ELECTRICAL CHARACTERISTICS ROM/RAM = GND PARAMETER Read Cycle Time CEI Access Time OE Access Time CEI to Output Low Output Low Z CEI to Output High Output High Z Read Recovery Write ...

Page 9

AC ELECTRICAL CHARACTERISTICS ROM/RAM = V PARAMETER Read Cycle Time CEI Access Time OE Access Time CEI to Output in Low Output in Low Z CEI to Output in High Output in High Z ...

Page 10

DS1215 TIMING DIAGRAM: READ CYCLE TO TIME CHIP ROM/RAM = GND CEI OE t COE Q TIMING DIAGRAM: WRITE CYCLE TO TIME CHIP ROM/RAM = GND CEI D É É É ...

Page 11

TIMING DIAGRAM: READ CYCLE ROM/RAM = V Ç Ç Ç Ç Ç Ç CEI Ç Ç Ç Ç Ç Ç Ç Ç Ç Ç Ç Ç Ç Ç Ç Ç Ç Ç Ç Ç Ç Ç Ç Ç Ç Ç ...

Page 12

DS1215 TIMING DIAGRAM: POWER DOWN CEI ROM/RAM = GND CEO ROM/RAM = V CEO CCO V CCI TIMING DIAGRAM: POWER UP ROM/RAM = GND CEO ROM/RAM = V CEO CCO V TIMING DIAGRAM: RESET FOR TIME CHIP RST 032697 12/15 ...

Page 13

NOTES: 1. All voltages are referenced to ground. 2. Measured with load shown in Figure 6. 3. Input pulse rise and fall times equal 10 ns function of the latter occurring edge ...

Page 14

DS1215 DS1215 TIME CHIP 032697 14/ PKG 16–PIN DIM MIN MAX A IN. 0.740 0.780 MM B IN. 0.240 0.260 MM C IN. 0.120 0.140 MM D IN. 0.300 ...

Page 15

... DS1215S SERIAL TIMEKEEPER 16–PIN SOIC PKG 16–PIN DIM MIN MAX A IN. 0.402 0.412 MM 10.21 10.46 B IN. 0.290 0.300 MM 7.37 7.65 C IN. 0.089 0.095 MM 2.26 2.41 E IN. 0.004 0.012 MM 0.102 0.30 F IN. 0.094 0.105 MM 2.38 2.68 G IN. 0.050 BSC MM 1.27 BSC H IN 0.398 0.416 MM 10.11 10. 0.009 0.013 MM 0.229 0.33 K IN. 0.013 ...

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