HYB5117400BJ-60 Infineon Technologies AG, HYB5117400BJ-60 Datasheet
HYB5117400BJ-60
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HYB5117400BJ-60 Summary of contents
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Dynamic RAM 2k & 4k Refresh (Fast Page Mode) Advanced Information • 4 194 304 words by 4-bit organization • operating temperature • Fast Page Mode operation • Performance: t RAS access time RAC ...
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The HYB 5(3)116(7)400 are 16 MBit dynamic RAMs based on die revisions “G” & “F” and organized as 4 194 304 words by 4-bits. The HYB 5(3)116(7)400BJ/BT utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit ...
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Pin Names Row Address Inputs Column Address Inputs Row Address Strobe Column Address Strobe Output Enable Data Input/Output Read/Write Input Power Supply Ground (0 V) Not Connected Pin Configuration Semiconductor Group HYB 5(3)116400 HYB 5(3)117400 4k-Refresh 2k-Refresh A0 - A11 ...
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WE CAS No.2 Clock Generator Column 10 Address A0 Buffers (10 Refresh A3 Controller Refresh A7 Counter (12 A10 Row A11 12 Address Buffers (12) No.1 Clock RAS Generator Block Diagram ...
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WE CAS No.2 Clock Generator Column 11 Address Buffers (11 Refresh A3 Controller Refresh Counter (11 A10 Row 11 Address Buffers (11) No.1 Clock RAS Generator Block Diagram for HYB ...
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Absolute Maximum Ratings Operating temperature range ........................................................................................... Storage temperature range........................................................................................ – 150 C Input/output voltage (5 V versions) ................................................... – 0.5 to min ( Input/output voltage (3.3 V versions) ................................................ – 0.5 to min ...
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DC Characteristics (cont’ Parameter Common Parameters Input leakage current 0.3 V, all other pins = Output leakage ...
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Capacitance MHz A Parameter Input capacitance (A0 to A11) Input capacitance (RAS, CAS, WE, OE) I/O capacitance (I/O1 - I/O4 Characteristics ...
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AC Characteristics (cont’ Parameter OE access time Column address to RAS lead time Read command setup time Read command hold time Read command hold time ...
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AC Characteristics (cont’ Parameter Fast Page Mode Cycle Fast page mode cycle time CAS precharge time Access time from CAS precharge RAS pulse width CAS ...
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Notes 1. All voltages are referenced and depend on cycle rate. CC1 CC3 CC4 CC6 and depend on output loading. Specified values are measured with the output open. CC1 ...
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V IH RAS CAS ASR V IH Address Row I/O (Inputs I/O (Outputs ...
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V IH RAS CAS ASR V IH Address Row RAH I/O (Inputs I/O (Outputs) ...
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V IH RAS CAS ASR V IH Address Row RAH I/O (Inputs I/O (Outputs) ...
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V IH RAS CAS ASR V IH Address Row I/O (Inputs I/O (Outputs) V ...
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V IH RAS CAS RAH t t ASR V IH Address Row RAD t RCS DZC V IH ...
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V IH RAS CAS RAH t t ASR ASC V IH Address Row RAD t WCS ...
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V IH RAS CSH t RCD V IH CAS RAD t t RAH t t ASR ASC V IH Address Row Column RWD t RCS ...
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V IH RAS CAS ASR V IH Address I/O (Outputs "H" or "L" RAS-only Refresh Cycle Semiconductor Group RAS t RAH Row Hi Z ...
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RAS RPC CAS ODD V IH I/O (Inputs CDD t OEZ V OH ...
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V IH RAS CAS RAD t ASC t RAH t ASR V IH Address Row RCS DZC V IH ...
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V IH RAS RCD V IH CAS RAD t ASC t RAH t ASR V IH Address Row WCS I/O (Input ...
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Read Cycle V IH RAS CSR V IH CAS Address WRP I/O (Inputs I/O ...
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V IH RAS RPC CAS Address ODD I/O (Inputs OEZ ...
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Package Outlines Plastic Package P-SOJ-26/24-1 (SMD) (300mil) (Plastic small outline J-leaded) 30˚ 1.27 0.51 -0 17.27 Index Marking 1) Does not include plastic or metal protrusions of 0.15 max per side Sorts of Packing Package outlines for tubes, ...
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Plastic Package P-TSOPII-26/24-1 (400 mil) (SMD) (Plastic Thin Small Outline Package (Type II)) 1.27 +0.12 0.4 -0.1 26 2119 17.14 Index Marking 1) Does not include plastic or metal protrusion of 0.15 max per side Sorts of ...