HYB514400BJ-60 Infineon Technologies AG, HYB514400BJ-60 Datasheet

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HYB514400BJ-60

Manufacturer Part Number
HYB514400BJ-60
Description
1M x 4bit DRAM
Manufacturer
Infineon Technologies AG
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HYB514400BJ-60
Manufacturer:
SIEMENS
Quantity:
1 770
1M
Advanced Information
• 1 048 576 words by 4-bit organization
• 0 to 70 C operating temperature
• Fast Page Mode Operation
• Performance:
• Single + 5 V ( 10 %) supply with a built-in VBB generator
• Low power dissipation
• Standby power dissipation:
• Output unlatched at cycle end allows two-dimensional chip selection
• Read, write, read-modify write, CAS-before-RAS refresh, RAS-only refresh,
• All inputs and outputs TTL-compatible
• 1024 refresh cycles / 16 ms
• Plastic Packages: P-SOJ-26/20-2 with 300 mil width
Semiconductor Group
t
t
t
t
t
max. 660 mW active (-50 version)
max. 605 mW active (-60 version)
11 mW max. standby (TTL)
5.5 mW max. standby (CMOS)
hidden refresh and test mode capability
RAC
CAC
AA
RC
PC
4-Bit Dynamic RAM
RAS access time
CAS access time
Access time from address
Read/Write cycle time
Fast page mode cycle time
-50
50
13
25
95
35
1
110
-60
60
15
30
40
ns
ns
ns
ns
ns
HYB 514400BJ-50/-60
1998-10-01

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HYB514400BJ-60 Summary of contents

Page 1

Dynamic RAM Advanced Information • 1 048 576 words by 4-bit organization • operating temperature • Fast Page Mode Operation • Performance: t RAS access time RAC t CAS access time CAC t Access ...

Page 2

The HYB 514400BJ/BJL is the new generation dynamic RAM organized as 1 048 576 words by 4-bit. The HYB 514400BJ/BJL utilizes CMOS silicon gate process as well as advances circuit techniques to provide wide operation margins, both internally and for ...

Page 3

Pin Configuration Pin Names Address Input RAS Row Address Strobe CAS Column Address Strobe WE Read/Write Input OE Output Enable I/O1 - I/O4 Data Input/Output V Power Supply (+ Ground ( ...

Page 4

WE CAS No.2 Clock Generator Column 10 Address Buffers (10 Refresh A2 Controller Refresh A6 Counter (10 Row 10 Address Buffers (10) No.1 Clock RAS Generator Block Diagram Semiconductor Group HYB ...

Page 5

Absolute Maximum Ratings Operating temperature range ........................................................................................... Storage temperature range.................................................................................... – 150 C Input/output voltage ....................................................................................................... – Power Supply voltage .................................................................................................... – Data ...

Page 6

Capacitance Parameter Input capacitance (A0 to A9) Input capacitance (RAS, CAS, WE, OE) Output capacitance (IO1 to IO4 Characteristics ...

Page 7

AC Characteristics (cont’ Parameter Column address to RAS lead time Read command setup time Read command hold time Read command hold time referenced to RAS CAS ...

Page 8

AC Characteristics (cont’ Parameter Access time from CAS precharge RAS pulse width CAS precharge to RAS delay Fast Page Mode Read-Modify-Write Cycle Fast page mode read-write ...

Page 9

Notes: 1. All voltages are referenced and depend on cycle rate. CC1 CC3 CC4 CC6 and depend on output loading. Specified values are measured with the output open. CC1 ...

Page 10

V IH RAS CAS ASR V IH Address Row I/O (Inputs I/O (Outputs ...

Page 11

V IH RAS CAS ASR V IH Address Row RAH I/O (Inputs I/O (Outputs) ...

Page 12

V IH RAS CAS ASR V IH Address Row RAH I/O (Inputs I/O (Outputs) ...

Page 13

V IH RAS CAS ASR V IH Address Row I/O (Inputs I/O (Outputs) V ...

Page 14

V IH RAS CAS RAH t ASR V IH Address Row RAD t RCS I/O (Inputs) V ...

Page 15

V IH RAS CAS RAH t t ASR ASC V IH Address Row RAD t WCS ...

Page 16

V IH RAS CSH t RCD V IH CAS RAD t t RAH t t ASR ASC V IH Address Row Column RWD t RCS ...

Page 17

V IH RAS CAS ASR V IH Address I/O (Outputs "H" or "L" RAS-Only Refresh Cycle Semiconductor Group RAS t RAH Row Hi Z ...

Page 18

RAS RPC CAS ODD V IH I/O (Inputs CDD t OEZ V OH ...

Page 19

V IH RAS CAS RAD t ASC t RAH t ASR V IH Address Row RCS DZC V IH ...

Page 20

V IH RAS RCD V IH CAS RAD t ASC t RAH t ASR V IH Address Row WCS I/O (Input ...

Page 21

Read Cycle V IH RAS CSR V IH CAS Address WRP I/O (Inputs I/O ...

Page 22

V IH RAS RPC V IH CAS ODD V IH I/O1 I/O4 - (Inputs ...

Page 23

Test Mode As the HYB 514400BJ is organized internally as 512k compression can be used to improve test time. Note that in the 1M reduced by 1/2 for a linear test pattern test mode “write” the data from ...

Page 24

Package Outlines Plastic Package, P-SOJ-26/20-2 (SMD) (Plastic small outline J-leaded) 30˚ 1.27 0.85 max 0.51 -0.1 15. ø 17.27 Index Marking Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data ...

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