K6T1008C2E-RF70

Manufacturer Part NumberK6T1008C2E-RF70
Description128Kx8 bit, 70ns low low power CMOS static RAM
ManufacturerSamsung
K6T1008C2E-RF70 datasheet
 
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GENERAL DESCRIPTION

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K6T1008C2E Family
128Kx8 bit Low Power CMOS Static RAM
FEATURES
Process Technology: TFT
Organization: 128Kx8
Power Supply Voltage: 4.5~5.5V
Low Data Retention Voltage: 2V(Min)
Three state output and TTL Compatible
Package Type: 32-DIP-600, 32-SOP-525,
32-TSOP1-0820F/R
PRODUCT FAMILY
Product Family
Operating Temperature
K6T1008C2E-L
Commercial(0~70 C)
K6T1008C2E-B
K6T1008C2E-P
Industrial(-40~85 C)
K6T1008C2E-F
1. The parameters are tested with 50pF test load
PIN DESCRIPTION
A11
1
A9
2
A8
3
A13
4
WE
5
N.C
1
32
VCC
CS2
6
A15
A16
2
31
A15
7
VCC
8
3
30
CS2
A14
NC
9
Type1-Forward
A16
10
A12
4
29
WE
A14
11
A7
5
28
A13
A12
12
A7
13
32-SOP
A6
6
27
A8
A6
14
A5
26
15
A5
7
A9
32-DIP
A4
16
25
A11
A4
8
24
OE
A3
9
A4
16
23
A10
A2
10
A5
15
A6
14
22
CS1
A1
11
A7
13
21
A12
12
I/O8
12
A0
A14
11
20
I/O1
13
I/O7
A16
10
NC
19
9
I/O6
I/O2
14
VCC
8
Type1-Reverse
18
I/O5
I/O3
15
A15
7
CS2
6
17
I/O4
VSS
16
WE
5
A13
4
A8
3
A9
2
A11
1
Name
Function
CS
, CS
Chip Select Input
1
2
OE
Output Enable Input
WE
Write Enable Input
I/O
~I/O
Data Inputs/Outputs
1
8
A
~A
Address Inputs
0
16
Vcc
Power
Vss
Ground
N.C.
No Connection
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.

GENERAL DESCRIPTION

The K6T1008C2E families are fabricated by SAMSUNG s
advanced CMOS process technology. The families support
various operating temperature ranges and have various pack-
age types for user flexibility of system design. The families
also support low data retention voltage for battery back-up
operation with low data retention current.
Power Dissipation
Vcc Range
Speed
Standby
(I
, Max)
SB1
50 A
10 A
4.5~5.5V
55
1)
/70ns
50 A
15 A
FUNCTIONAL BLOCK DIAGRAM
32
OE
31
A10
30
CS1
29
I/O8
28
I/O7
27
I/O6
26
I/O5
32-TSOP
25
I/O4
24
VSS
23
I/O3
22
I/O2
Raw
21
I/O1
Address
20
A0
19
A1
18
A2
17
A3
17
A3
18
A2
19
A1
20
A0
21
I/O1
22
I/O2
I/O
1
23
I/O3
32-TSOP
24
VSS
I/O
8
25
I/O4
26
I/O5
27
I/O6
28
I/O7
29
I/O8
30
CS1
31
A10
32
OE
CS
1
Control
CS
2
logic
WE
OE
2
CMOS SRAM
PKG Type
Operating
(I
Max)
CC2,
32-DIP-600, 32-SOP-525
32-TSOP1-0820F/R
50mA
32-SOP -525
32-TSOP1-0820F/R
Clk gen.
Precharge circuit.
Memory array
Row
1024 rows
select
128 8 columns
Data
I/O Circuit
cont
Column select
Data
cont
Column Address
Revision 3.0
March 2000