K6T1008C2E-RF70

Manufacturer Part NumberK6T1008C2E-RF70
Description128Kx8 bit, 70ns low low power CMOS static RAM
ManufacturerSamsung
K6T1008C2E-RF70 datasheet
 
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DATA RETENTION CHARACTERISTICS

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K6T1008C2E Family
AC OPERATING CONDITIONS
TEST CONDITIONS
( Test Load and Input/Output Reference)
Input pulse level: 0.8 to 2.4V
Input rising and falling time: 5ns
Input and output reference voltage:1.5V
Output load(see right): C
=100pF+1TTL
L
C
=50pF+1TTL
L
AC CHARACTERISTICS
(V
=4.5~5.5V, Commercial Product: T
CC
Parameter List
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
Read
Chip Select to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Write Cycle Time
Chip Select to End of Write
Address Set-up Time
Address Valid to End of Write
Write Pulse Width
Write
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End Write to Output Low-Z

DATA RETENTION CHARACTERISTICS

Item
Symbol
Vcc for data retention
V
DR
Data retention current
I
DR
Data retention set-up time
t
SDR
Recovery time
t
RDR
1. CS
Vcc-0.2V, CS
Vcc-0.2V(CS
controlled) or CS
1
2
1
1)
C
L
1. Including scope and jig capacitance
=0 to 70 C, Industrial Product: T
A
Symbol
Min
t
55
RC
t
-
AA
t
-
CO
t
-
OE
t
10
LZ
t
5
OLZ
t
0
HZ
t
0
OHZ
t
10
OH
t
55
WC
t
45
CW
t
0
AS
t
45
AW
t
40
WP
t
0
WR
t
0
WHZ
t
20
DW
t
0
DH
t
5
OW
Test Condition
1)
CS
Vcc-0.2V
1
K6T1008C2E-L
K6T1008C2E-B
1)
Vcc=3.0V, CS
Vcc-0.2V
1
K6T1008C2E-P
K6T1008C2F-F
See data retention waveform
0.2V(CS
controlled)
2
2
5
CMOS SRAM
=-40 to 85 C
)
A
Speed Bins
Units
55ns
70ns
Max
Min
Max
-
70
-
ns
55
-
70
ns
55
-
70
ns
25
-
35
ns
-
10
-
ns
-
5
-
ns
20
0
25
ns
20
0
25
ns
-
10
-
ns
-
70
-
ns
-
60
-
ns
-
0
-
ns
-
60
-
ns
-
50
-
ns
-
0
-
ns
20
0
25
ns
-
25
-
ns
-
0
-
ns
-
5
-
ns
Min
Typ
Max
Unit
2.0
-
5.5
V
-
-
20
-
-
10
A
-
-
25
-
-
10
0
-
-
ms
5
-
-
Revision 3.0
March 2000