K6X4016C3F-TF70

Manufacturer Part NumberK6X4016C3F-TF70
ManufacturerSamsung
K6X4016C3F-TF70 datasheet
 


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Page 4/9:

RECOMMENDED DC OPERATING CONDITIONS

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K6X4016C3F Family

RECOMMENDED DC OPERATING CONDITIONS

Item
Supply voltage
Ground
Input high voltage
Input low voltage
Note:
1. Commercial Product: T
=0 to 70 C, otherwise specified
A
Industrial Product: T
=-40 to 85 C, otherwise specified
A
Automotive Product T
=-40 to 125 C, otherwise specified
A
2. Overshoot: V
+3.0V in case of pulse width
CC
3. Undershoot: -3.0V in case of pulse width
30ns
4. Overshoot and undershoot are sampled, not 100% tested
CAPACITANCE
1)
(f=1MHz, T
=25 C)
A
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Input leakage current
I
LI
Output leakage current
I
LO
Operating power supply current
I
CC
I
CC1
Average operating current
I
CC2
Output low voltage
V
OL
Output high voltage
V
OH
Standby Current(TTL)
I
SB
Standby Current(CMOS)
I
SB1
1)
Symbol
Min
Vcc
4.5
Vss
0
V
2.2
IH
V
-0.5
3)
IL
30ns
Symbol
Test Condition
C
V
=0V
IN
IN
C
V
=0V
IO
IO
Test Conditions
V
=Vss to Vcc
IN
CS=V
or OE=V
or WE=V
, V
=Vss to Vcc
IH
IH
IL
IO
I
=0mA, CS=V
, V
=V
or V
, Read
IO
IL
IN
IL
IH
Cycle time=1 s, 100% duty, I
=0mA
IO
CS 0.2V, V
0.2V or V
Vcc-0.2V
IN
IN
Cycle time=Min, 100% duty, I
=0mA, CS=V
IO
V
=V
or V
IN
IH
IL
I
=2.1mA
OL
I
=-1.0mA
OH
CS=V
, Other inputs = V
or V
IH
IL
IH
CS Vcc-0.2V, Other inputs=0~Vcc
4
CMOS SRAM
Typ
Max
Unit
5.0
5.5
V
0
0
V
-
Vcc+0.5
2)
V
-
0.8
V
Min
Max
Unit
-
8
pF
-
10
pF
Min
Typ
Max
Unit
-1
-
1
-1
-
1
-
-
5
-
-
7
IL,
-
-
30
-
-
0.4
2.4
-
-
-
-
0.4
K6X4016C3F-B
-
-
20
K6X4016C3F-F
-
-
K6X4016C3F-Q
-
-
30
Revision 1.0
September 2003
A
A
mA
mA
mA
V
V
mA
A
A