NE58633BS,157 NXP Semiconductors, NE58633BS,157 Datasheet

IC AMP AUDIO .04W STER D 32HVQFN

NE58633BS,157

Manufacturer Part Number
NE58633BS,157
Description
IC AMP AUDIO .04W STER D 32HVQFN
Manufacturer
NXP Semiconductors
Type
Class Dr
Datasheet

Specifications of NE58633BS,157

Output Type
Headphones, 2-Channel (Stereo)
Package / Case
32-VQFN Exposed Pad, 32-HVQFN, 32-SQFN, 32-DHVQFN
Max Output Power X Channels @ Load
40mW x 2 @ 16 Ohm
Voltage - Supply
0.9 V ~ 1.7 V
Features
Depop, Differential Inputs, Microphone, Mute, Short-Circuit Protection
Mounting Type
Surface Mount
Product
Class-D
Output Power
40 mW
Available Set Gain
100 dB
Thd Plus Noise
1 %
Supply Current
5 mA
Maximum Operating Temperature
+ 70 C
Mounting Style
SMD/SMT
Audio Load Resistance
32 Ohms
Input Offset Voltage
1 mV
Input Signal Type
Single
Minimum Operating Temperature
0 C
Output Signal Type
Differential, Single
Supply Type
Single
Supply Voltage (max)
1.7 V
Supply Voltage (min)
0.9 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
935283227157
NE58633BS
NE58633BS
1. General description
2. Features
The NE58633 is a stereo, noise reduction, class-D, Bridge-Tied Load (BTL) headphone
driver amplifier. Each channel comprises a class-D BTL headphone driver amplifier, an
electret microphone low noise preamplifier, feedback noise reduction circuit and a music
amplifier input.
The NE58633 operates with a battery voltage of 0.9 V to 1.7 V. The chip employs an
on-chip DC-to-DC boost converter and internal V
output to ground for noise decoupling. It features mute control and plop and click
reduction circuitry. The gain of the microphone amplifier and filter amplifier is set using
external resistors. Differential architecture provides increased immunity to noise.
The NE58633 is capable of driving 800 mV
ElectroStatic Discharge (ESD) and short-circuit protection.
It is available in the 32-pin HVQFN32 (5 mm × 5 mm × 0.85 mm) package suitable for
high density small-scale layouts and is an ideal choice for noise reduction headphones
and educational audio aids.
NE58633
Noise reduction class-D headphone driver amplifier
Rev. 03 — 19 January 2010
Low current consumption of 4.4 mA
0.9 V to 1.7 V battery operating voltage range
1 % THD+N at V
10 % THD+N at 800 mV
voltage of 1.5 V
Output noise voltage with noise reduction circuit typically 31 mV
On-chip mute function
Plop and click reduction circuitry
Class-D BTL differential output configuration
Electret microphone noise reduction polarization amplifier with external gain
adjustment using resistors
Music and filter amplifier with external gain adjustment using resistors
DC-to-DC converter circuitry (3 V output) with 2.5 mA (typical) load current
Internal voltage reference pinned out for noise decoupling
Available in HVQFN32 package
O
= 1 V
M
rms
driving 16 Ω with a battery voltage of 1.5 V
output voltage driving 16 Ω and 32 Ω loads with a battery
rms
across a 16 Ω or 32 Ω load and provides
ref
voltage reference which is filtered and
Product data sheet
rms
for G
v(cl)
= 25 dB

Related parts for NE58633BS,157

NE58633BS,157 Summary of contents

Page 1

NE58633 Noise reduction class-D headphone driver amplifier Rev. 03 — 19 January 2010 1. General description The NE58633 is a stereo, noise reduction, class-D, Bridge-Tied Load (BTL) headphone driver amplifier. Each channel comprises a class-D BTL headphone driver amplifier, an ...

Page 2

... NXP Semiconductors 3. Ordering information Table 1. Type number NE58633BS 4. Block diagram MA_OUTR MA_INRN MA_INRP NMIC_OUTR NMIC_INRN NMIC_INRP NMIC_INLP NMIC_INLN NMIC_OUTL MA_INLP MA_INLN MA_OUTL Fig 1. NE58633_3 Product data sheet Noise reduction class-D headphone driver amplifier Ordering information Package Name Description HVQFN32 plastic thermal enhanced very thin quad flat package; ...

Page 3

... NXP Semiconductors 5. Pinning information 5.1 Pinning Fig 2. 5.2 Pin description Table 2. Symbol NMIC_OUTL MA_INLP MA_INLN MA_OUTL AGND PGNDL OUTLP PVDDL OUTLN PGNDL MUTE n.c. PGNDR OUTRN PVDDR OUTRP PGNDR VREF NE58633_3 Product data sheet Noise reduction class-D headphone driver amplifier terminal 1 ...

Page 4

... NXP Semiconductors Table 2. Symbol MA_OUTR MA_INRN MA_INRP NMIC_OUTR NMIC_INRN NMIC_INRP AGND B_IN BS VBAT NMIC_INLP NMIC_INLN 6. Limiting values Table 3. In accordance with the Absolute Maximum Rating System (IEC 60134 amb Symbol V BAT amb stg V ESD 7. Recommended operating conditions Table 4. Symbol V BAT V i(cm) ...

Page 5

... NXP Semiconductors 8. Characteristics Table 5. Electrical characteristics ° unless otherwise specified. amb Symbol Parameter |V | output offset voltage O(offset input offset voltage I(offset) Z input impedance i I input leakage current LI V HIGH-level output voltage OH V LOW-level output voltage OL V reference voltage ref I supply current ...

Page 6

... NXP Semiconductors Table 6. Operating characteristics Symbol Parameter ΔV output voltage variation o P output power o THD+N total harmonic distortion-plus-noise G open-loop voltage gain v(ol) α crosstalk attenuation ct SVRR supply voltage ripple rejection Z input impedance i S/N signal-to-noise ratio V input noise voltage n(i) V output noise voltage ...

Page 7

... NXP Semiconductors 9. Typical performance curves 12 I BAT (mA 0.8 1 3.14 V bst Fig 3. Battery supply current as a function of battery supply voltage V (V) bst 3.1 2.9 2.7 2.5 2.3 Fig 5. Boost voltage performance versus battery supply voltage and output load boost current NE58633_3 Product data sheet ...

Page 8

... NXP Semiconductors 80 (2) (%) 0.9 V BAT ( 1.2 V BAT ( 1.5 V BAT a. Battery supply voltage = 0.9 V, 1.2 V and 1 1.1 V BAT ( 1.4 V BAT ( 1.7 V BAT c. Battery supply voltage = 1.1 V, 1.4 V and 1.7 V Fig 6. Efficiency as a function of external load resistance; boost voltage = 3.14 V NE58633_3 Product data sheet ...

Page 9

... NXP Semiconductors 2 10 THD+N ratio (%) Ω Ω speaker load + 2 × ferrite bead + × 0 Ω resistor + 2 × shunt capacitor; measured across 16 Ω speaker load; f A-weighting filter for THD+N. ( 1.05 V BAT ( 1.3 V BAT ( 1.5 V BAT ( 1.7 V BAT Total harmonic distortion-plus-noise as a function of output power; 16 Ω load Fig 7 ...

Page 10

... NXP Semiconductors 40 G (dB 6 NMIC_IN rms bst Fig 9. Gain as a function of frequency response of feedforward noise reduction circuit; NMIC_INx to MA_OUTx for feedforward application circuit NE58633_3 Product data sheet Noise reduction class-D headphone driver amplifier 002aad958 (Hz 1.5 V BAT Fig 10. Gain as a function of frequency; NMIC_INx to Rev. 03 — ...

Page 11

... NXP Semiconductors (1) (2) (3) (4) At start-up, no signal on music input. No pop or click. The small glitches on trace (2) are just noise from the noise reduction amplifier feed-through. Start-up delay approximately 135 ms. (1) VBAT switch ON to 1.5 V (50 ms; 1.0 V) (2) Difference between trace (3) and (4), which equates to the pop or click (0.5 ms; 0.54 V) (3) OUTLP (50 ms ...

Page 12

... NXP Semiconductors 10. Application information 10.1 General application description The NE58633 is a stereo noise reduction IC with a boost converter output at 3.2 V with 2.5 mA load current. Using the on-chip boost converter, it operates from a single cell alkaline battery (0 1.7 V). The NE58633 is optimized for low current consumption at ...

Page 13

... NXP Semiconductors MA_OUTR MA_INRP 22 MA_INRN 47 k 100 nF 24 NMIC_OUTR NMIC_INRN NMIC_INRP AGND 28 B_IN 100 VBAT V BAT NMIC_INLP NMIC_INLN NMIC_OUTL MA_INLP 100 nF 3 MA_INLN 2 MA_OUTL AGND (1) Select R value for desired power output delivered to speaker load. s Fig 13. NE58633 feedback application schematic ...

Page 14

... NXP Semiconductors MA_OUTR 3 MA_INRP 22 MA_INRN 3.3 k 330 nF 3 NMIC_OUTR NMIC_INRN 8 NMIC_INRP AGND 28 B_IN 100 VBAT V BAT NMIC_INLP NMIC_INLN 8 NMIC_OUTL MA_INLP 330 nF 3 MA_INLN MA_OUTL 3 AGND (1) Select R value for desired power output delivered to speaker load. s Fig 14. NE58633 feedforward application schematic ...

Page 15

... NXP Semiconductors 10.2 Power supply decoupling The power supply pins B_IN, PVDDL and PVDDR are decoupled with 1 μF capacitors directly from the pins to ground. 10.3 Speaker output filtering considerations The ferrite beads form a low-pass filter with a shunt capacitor to reduce radio frequency > 1 MHz. Choose a ferrite bead with high-impedance at high frequencies and low-impedance at low frequencies. A typical ferrite bead is 600 Ω ...

Page 16

... NXP Semiconductors 10.4.2 Critical layout consideration and component selection The trace between pin BS and the switching inductor must be kept as short as possible. The VBAT side of the boost switching inductor is decoupled by use of a low Equivalent Series Resistance (ESR) 10 μ capacitor. A power inductor with low ESR (typically 50 mΩ ...

Page 17

... NXP Semiconductors 10 (dB Passive attenuation left 10 (dB Total attenuation left 10 (dB Active attenuation left Fig 16. Combined noise reduction (PNR + ANR) of typical over-the-ear FB application NE58633_3 Product data sheet Noise reduction class-D headphone driver amplifier 002aad911 10 (dB (Hz) b. Passive attenuation right 002aad913 10 (dB) ...

Page 18

... NXP Semiconductors 10.8.2 Feedforward circuit 10.8.2.1 Conceptual diagram of feedforward application Figure 17 microphone samples the noise outside the acoustic plant of the headphone or earphone. Fig 17. Feedforward conceptual diagram This method produces a noise-cancelling signal that tries to replicate the noise in the acoustical plant at the loudspeaker and entrance to the ear. The replication is never exact because the microphone is located outside the headphones ...

Page 19

... NXP Semiconductors 10.8.3 Feedback circuit 10.8.3.1 Conceptual diagram of feedback application Figure 18 cancelling microphone samples the noise and music inside the acoustical plant. Fig 18. Feedback conceptual diagram The feedback solution employs a low cost, battery operated analog Active Noise Reduction (ANR) technique. The topology uses negative feedback circuitry in which the noise reduction microphone is placed close to the ear and headphone loudspeaker ...

Page 20

... NXP Semiconductors Since the attenuation performance of an analog ANR headphone is defined in the design stage, it has limited applicability to work in different environments. Overall noise cancelling performance is achieved by first characterizing the passive attenuation of headphone plant and then designing the ANR circuitry to obtain the optimal overall noise reduction performance and stability ...

Page 21

... NXP Semiconductors 12. Package outline HVQFN32: plastic thermal enhanced very thin quad flat package; no leads; 32 terminals; body 0.85 mm terminal 1 index area terminal 1 index area 32 DIMENSIONS (mm are the original dimensions) (1) A UNIT max. 0.05 0. 0.2 0.00 0.18 Note 1. Plastic or metal protrusions of 0.075 mm maximum per side are not included. ...

Page 22

... NXP Semiconductors 13. Soldering of SMD packages This text provides a very brief insight into a complex technology. A more in-depth account of soldering ICs can be found in Application Note AN10365 “Surface mount reflow soldering description”. 13.1 Introduction to soldering Soldering is one of the most common methods through which packages are attached to Printed Circuit Boards (PCBs), to form electrical circuits ...

Page 23

... NXP Semiconductors 13.4 Reflow soldering Key characteristics in reflow soldering are: • Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to higher minimum peak temperatures (see reducing the process window • Solder paste printing issues including smearing, release, and adjusting the process window for a mix of large and small components on one board • ...

Page 24

... NXP Semiconductors Fig 21. Temperature profiles for large and small components For further information on temperature profiles, refer to Application Note AN10365 “Surface mount reflow soldering description”. 14. Abbreviations Table 9. Acronym ANR BTL DUT ESD ESR FB RMS PNR PWM NE58633_3 Product data sheet Noise reduction class-D headphone driver amplifier ...

Page 25

... NXP Semiconductors 15. Revision history Table 10. Revision history Document ID Release date NE58633_3 20100119 • Modifications: Table 3 “Limiting • Table 6 “Operating “70 %” • Figure 5 • Figure 13 “NE58633 feedback application schematic” • Figure 14 “NE58633 feedforward application schematic” • Section 10.4.2 “Critical layout consideration and component “ ...

Page 26

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 27

... NXP Semiconductors 18. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 5.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 Limiting values Recommended operating conditions Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 9 Typical performance curves . . . . . . . . . . . . . . . 7 10 Application information 10.1 General application description . . . . . . . . . . . 12 10.2 Power supply decoupling . . . . . . . . . . . . . . . . 15 10 ...

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