M5M5256DVP-55LL Renesas Electronics Corporation., M5M5256DVP-55LL Datasheet
M5M5256DVP-55LL
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M5M5256DVP-55LL Summary of contents
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... NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current is small enough f or battery back-up application ideal f or the memory sy stems which require simple interf ace. Especially the M5M5256DVP are packaged in a 28-pin thin small outline package. FEATURE Access ...
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FUNCTION The operation mode of the M5M5256DFP,VP is determined by a combination of the dev ice control inputs /S, /W and /OE. Each mode is summarized in the f unction table. A write cy cle is executed whenev er the ...
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ABSOLUTE MAXIMUM RATINGS Symbol Parameter Supply voltage Vcc V Input voltage I V Output voltage O P Power dissipation d T Operating temperature opr Storage temperature T stg * -3.0V in case Pulse width < 30ns ) ...
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AC ELECTRICAL CHARACTERISTICS (1) READ CYCLE Symbol t Read cycle time CR t (A) Address access time a t (S) Chip select access time a Output enable access time t (OE (S) Output disable time after /S high ...
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TIMING DIAGRAMS Read cycle (Note 3) /OE (Note "H" lev el Write cycle (/W control mode (Note 3) / (Note 3) ...
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Write cycle ( /S control mode (Note Note 3 : Hatching indicates the state is "don't care" Writing is executed in ov erlap of /S and /W low. 5 ...
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POWER DOWN CHARACTERISTICS (1) ELECTRICAL CHARACTERISTICS Symbol Parameter Vcc Power down supply v oltage (PD) V Chip select input /S I (/S) Icc Power down supply current (PD) (2) TIMING REQUIREMENTS Symbol Parameter t Power down set up time su ...
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Keep safety first in your circuit designs! · Renesas T echnology Corporation puts the m axim um effort int ing sem iconductor products better and more reliable, but there is always the possibility that trouble m ...