MRF9080L Freescale Semiconductor, Inc, MRF9080L Datasheet

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MRF9080L

Manufacturer Part Number
MRF9080L
Description
Manufacturer
Freescale Semiconductor, Inc
Datasheet
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
performance of these devices make them ideal for large - signal, common -
source amplifier applications in 26 volt base station equipment.
• Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 90 Watts CW
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model
Machine Model
Designed for GSM 900 MHz frequency band, the high gain and broadband
Output Power
40μ″ Nominal.
Derate above 25°C
Output Power @ P1db: 75 Watts
Power Gain @ P1db: 18.5 dB
Efficiency @ P1db: 55%
C
= 25°C
Test Conditions
Characteristic
Rating
Symbol
Symbol
V
R
V
T
P
T
DSS
T
θJC
GS
stg
D
C
J
921 - 960 MHz, 75 W, 26 V
Document Number: MRF9080
MRF9080LSR3
LATERAL N - CHANNEL
MRF9080LR3
RF POWER MOSFETs
CASE 465A - 06, STYLE 1
CASE 465 - 06, STYLE 1
MRF9080LR3 MRF9080LSR3
M1 (Minimum)
1 (Minimum)
- 65 to +150
MRF9080LSR3
MRF9080LR3
- 0.5, +65
- 0.5, +15
Value
Value
Class
1.43
NI - 780S
250
150
200
0.7
NI - 780
Rev. 6, 5/2006
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
W
1

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MRF9080L Summary of contents

Page 1

... CASE 465 - 06, STYLE 780 MRF9080LR3 CASE 465A - 06, STYLE 780S MRF9080LSR3 Symbol Value Unit V - 0.5, +65 Vdc DSS V - 0.5, +15 Vdc GS P 250 W D 1.43 W/° +150 °C stg T 150 ° 200 °C J Symbol Value Unit R 0.7 °C/W θJC Class 1 (Minimum) M1 (Minimum) MRF9080LR3 MRF9080LSR3 1 ...

Page 2

... 600 mA 921 and 960 MHz) DD out DQ 1. Part is internally input matched meet application requirements, Freescale test fixtures are designed to cover full GSM 900 band ensuring batch to batch consistency MRF9080LR3 MRF9080LSR3 2 = 25°C unless otherwise noted) C Symbol I DSS ...

Page 3

... C15 C16 C14 C10 Part Number Manufacturer 100B4R7BW ATC 100B2R7BW ATC 100B1R5BW ATC 100B5R6CW ATC 100B220GW ATC 293D106X9035D2T Sprague- Vishay 100B100JW ATC 100B0R8BW ATC 100B8R2GW ATC 0.004″ x 0.210″ x 0.520″ TLX8- 0300 Taconic 00- 001- 02 Cibel MRF9080LR3 MRF9080LSR3 RF OUTPUT 3 ...

Page 4

... Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. Broadband GSM 900 Test Circuit Component Layout MRF9080LR3 MRF9080LSR3 ...

Page 5

... Description #08051J3R9CBT #08051J3R9CBT #08051J221 #T491X226K035AS4394 #08053G105ZATEA #08051J5R18CBT #08051J8R2CBT #08051J2R2CBT #100B #3224W #BC847ALT1 #LP2951ACDM- 5.0R2 #R125510001 V DD C15 C10 C13 RF OUTPUT C14 C11 C12 Part Number Manufacturer AVX AVX AVX Kemet AVX AVX AVX AVX ATC Bourns ON Semiconductor ON Semiconductor Radial MRF9080LR3 MRF9080LSR3 5 ...

Page 6

... Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 4. Broadband GSM 900 Optimized Demo Board Component Layout MRF9080LR3 MRF9080LSR3 6 V Ground ...

Page 7

... MHz T = 25°C 0.4 0.6 0.8 1 1.2 1.4 1 INPUT POWER (WATTS) in Input Power 25°C 85°C h 25°C 85°C P out Vdc 600 940 MHz 0.4 0.6 0.8 1 1.2 1.4 1 INPUT POWER (WATTS) in Power MRF9080LR3 MRF9080LSR3 30 Vdc 100 1 1.8 7 ...

Page 8

... Z load f = 880 MHz f = 1000 MHz f = 880 MHz Figure 11. Series Equivalent Source and Load Impedance MRF9080LR3 MRF9080LSR3 Ω source f = 1000 MHz 600 mA out source load MHz Ω Ω 880 0.91 - j2.11 1.22 - j0.12 920 0.88 - j2.65 1.00 - j0.16 960 1.6 - j2.61 1.22 - j0.22 1000 2.45 - j3.38 1.14 - j0. Test circuit impedance as measured from source gate to ground ...

Page 9

... RF Device Data Freescale Semiconductor NOTES MRF9080LR3 MRF9080LSR3 9 ...

Page 10

... MRF9080LR3 MRF9080LSR3 10 NOTES RF Device Data Freescale Semiconductor ...

Page 11

... M R 0.365 0.375 9.27 S 0.365 0.375 9.27 U −−− 0.040 −−− Z −−− 0.030 −−− aaa 0.005 REF 0.127 REF bbb F 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MRF9080LR3 MRF9080LSR3 9.91 4.32 1.14 0.15 1.70 5.33 3.51 9.53 9.52 9.91 4.32 1.14 0.15 1.70 5.33 9.53 9.52 1.02 0.76 11 ...

Page 12

... Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF9080LR3 MRF9080LSR3 Document Number: MRF9080 Rev. 6, 5/2006 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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