MRF9135L Freescale Semiconductor, Inc, MRF9135L Datasheet

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MRF9135L

Manufacturer Part Number
MRF9135L
Description
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
frequencies from 865 to 895 MHz. The high gain and broadband performance
of these devices make them ideal for large - signal, common - source amplifier
applications in 26 volt base station equipment.
• Typical N - CDMA Performance @ 880 MHz, 26 Volts, I
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 135 Watts CW
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model
Machine Model
Charge Device Model
Designed for broadband commercial and industrial applications with
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to
IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power
Derate above 25°C
Output Power — 25 Watts Avg.
Power Gain — 17.8 dB
Efficiency — 25%
Adjacent Channel Power —
access the MTTF calculators by product.
750 kHz: - 47 dBc @ 30 kHz BW
C
= 25°C
Test Conditions
Characteristic
Rating
DQ
= 1100 mA
Symbol
Symbol
V
R
V
T
P
T
DSS
T
θJC
GS
stg
D
C
J
CASE 465A - 06, STYLE 1
CASE 465 - 06, STYLE 1
Document Number: MRF9135L
MRF9135LR3
MRF9135LSR3
MRF9135LSR3
LATERAL N - CHANNEL
MRF9135LR3
RF POWER MOSFETs
880 MHz, 135 W, 26 V
NI - 780
NI - 780S
MRF9135LR3 MRF9135LSR3
M2 (Minimum)
C7 (Minimum)
1 (Minimum)
- 65 to +200
- 0.5, +65
Value
- 0.5, +15
Value
Class
298
150
200
1.7
0.6
(1)
Rev. 8, 5/2006
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
W
1

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MRF9135L Summary of contents

Page 1

... Charge Device Model 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor Document Number: MRF9135L MRF9135LR3 MRF9135LSR3 = 1100 mA DQ 880 MHz, 135 LATERAL N - CHANNEL ...

Page 2

... MHz and 895 MHz; ACPR @ 25 W, 1.23 MHz Bandwidth, 750 kHz Channel Spacing) Input Return Loss ( Vdc Avg CDMA out f = 865 MHz and 895 MHz) MRF9135LR3 MRF9135LSR3 2 = 25°C, 50 ohm system unless otherwise noted) Symbol I DSS I DSS I GSS ...

Page 3

... Microstrip 0.360″ x 0.080″ Microstrip 0.410″ x 0.080″ Microstrip Arlon GX - 0300- 55- 22, 0.030″, ε = 2.55 r Part Number Manufacturer Fair Rite ATC Johanson ATC Johanson ATC ATC Kemet ATC ATC Kemet United Chemi - Con Coilcraft RF - Design Lab MRF9135LR3 MRF9135LSR3 ...

Page 4

... Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 880 MHz Test Circuit Component Layout MRF9135LR3 MRF9135LSR3 ...

Page 5

... MHz 880.1 MHz I = 880 mA DQ 1650 mA 1320 mA 1100 OUTPUT POWER (WATTS) PEP out Figure 5. Intermodulation Distortion versus Output Power Vdc 1100 880 MHz OUTPUT POWER (WATTS) AVG. out Output Power MRF9135LR3 MRF9135LSR3 100 100 5 ...

Page 6

... Figure CDMA Performance Output Power Figure 10. MTTF Factor versus Junction Temperature MRF9135LR3 MRF9135LSR3 6 TYPICAL CHARACTERISTICS G ps η Vdc 1100 880 MHz 880.1 MHz IMD 10 100 P , OUTPUT POWER (WATTS) PEP out Figure 8 ...

Page 7

... FREQUENCY (MHz) MRF9135LR3 MRF9135LSR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . ...

Page 8

... Z Z Figure 13. Series Equivalent Source and Load Impedance MRF9135LR3 MRF9135LSR3 Ω 895 MHz source f = 865 MHz f = 895 MHz f = 865 MHz =1100 mA Avg out source load MHz Ω Ω 865 1.15 + j0.3 1.17 - j0.24 880 1.25 + j0.5 1.22 - j0.1 895 1.35 + j0.75 1.32 - j0.07 = Test circuit impedance as measured from source gate to ground ...

Page 9

... RF Device Data Freescale Semiconductor NOTES MRF9135LR3 MRF9135LSR3 9 ...

Page 10

... MRF9135LR3 MRF9135LSR3 10 NOTES RF Device Data Freescale Semiconductor ...

Page 11

... S 0.365 0.375 9.27 U −−− 0.040 −−− Z −−− 0.030 −−− aaa 0.005 REF 0.127 REF F bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MRF9135LR3 MRF9135LSR3 MAX 34.16 9.91 4.32 12.83 1.14 0.15 1.70 5.33 19.96 20.00 3.51 9.53 9.52 9.91 4.32 1.14 0.15 1.70 5.33 9.53 9.52 1.02 0.76 11 ...

Page 12

... Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF9135LR3 MRF9135LSR3 Document Number: MRF9135L Rev. 8, 5/2006 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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