RF2125 RF Micro Devices, RF2125 Datasheet
RF2125
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RF2125 Summary of contents
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... Digital Communication Systems • DECT Cordless Applications Product Description The RF2125 is a high power, high efficiency linear ampli- fier IC. The device is manufactured on an advanced Gal- lium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF ...
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... RF2125 Absolute Maximum Ratings Parameter Supply Voltage ( Power Control Voltage ( Supply Current Input RF Power 2 Output Load Operating Case Temperature Operating Ambient Temperature Storage Temperature Parameter Overall Frequency Range Maximum Output Power Maximum Output Power Maximum Output Power Total Power Added Efficiency ...
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... Ground connection. The backside of the package should be connected to the ground plane through a short path, i.e., vias under the device Base may be required 100 Rev A7 010112 Applicat ion Schemat ic 1880MHz BIAS CIRCUIT 4 5 PACKAGE BASE 100 nF RF2125 Interface Schematic 3 OUT 3 100 pF 2-63 2 ...
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... RF2125 strip J1 P1-3 P1-1 2-64 Evaluat ion Board Schemat ic 1880MHz (Download Bill of Materials from www.rfmd.com BIAS 1 nF CIRCUIT PACKAGE BASE 100 Evaluation Board Layout 1.5” x 1.0” Board Thickness 0.031”; Board Material FR OUT 3 ...
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... CC CC RF2125 Gain 1.2 1.4 1.6 1.8 Frequency (GHz) RF2125 Input / Output Impedance, Class A bias 2.5 GHz S11 S22 2.5 GHz 1 GHz 1 GHz Rev A7 010112 =50 to 250mA. DB(|S[2,1]|) Vcc=6.5V, Icc=200mA DB(GMax) Vcc=6.5V, Icc=200mA DB(|S[2,1]|) Vcc=5.0V, Icc=50mA DB(GMax) Vcc=5.0V, Icc=50mA 2 2.2 2.4 2.6 -33 Swp Max 2 ...
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... RF2125 2 2-66 Rev A7 010112 ...