MRF284S Motorola, MRF284S Datasheet

no-image

MRF284S

Manufacturer Part Number
MRF284S
Description
RF power field-effect transistor
Manufacturer
Motorola
Datasheet
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier
applications. To be used in class A and class AB for PCN–PCS/cellular radio
and wireless local loop.
REV 3
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
MOTOROLA RF DEVICE DATA
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T C = 25 C
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Drain–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Source Leakage Current
Designed for PCN and PCS base station applications at frequencies from
Motorola, Inc. 1997
Specified Two–Tone Performance @ 2000 MHz, 26 Volts
Typical Single–Tone Performance at 2000 MHz, 26 Volts
Characterized with Series Equivalent Large–Signal Impedance Parameters
S–Parameter Characterization at High Bias Levels
Excellent Thermal Stability
Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 30 Watts (CW)
Output Power
Derate above 25 C
(V GS = 0, I D = 10 Adc)
(V DS = 20 Vdc, V GS = 0)
(V GS = 20 Vdc, V DS = 0)
Intermodulation Distortion = –29 dBc
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power = 30 Watts (PEP)
Power Gain = 9 dB
Efficiency = 30%
Output Power = 30 Watts (CW)
Power Gain = 9.5 dB
Efficiency = 45%
Characteristic
Characteristic
Rating
(T C = 25 C unless otherwise noted)
V (BR)DSS
Symbol
I DSS
I GSS
Symbol
Symbol
V DSS
R JC
V GS
T stg
Min
P D
T J
65
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 360B–01, STYLE 1
CASE 360C–03, STYLE 1
30 W, 2000 MHz, 26 V
MRF284S
Typ
MRF284
– 65 to +150
BROADBAND
(MRF284S)
Value
(MRF284)
87.5
Max
200
0.5
2.0
65
20
MRF284 MRF284S
Order this document
Max
1.0
10
by MRF284/D
Watts
W/ C
Unit
Unit
Unit
Vdc
Vdc
Vdc
C/W
Adc
Adc
C
C
1

Related parts for MRF284S

MRF284S Summary of contents

Page 1

... Value V DSS 87.5 0.5 T stg – +150 T J 200 Symbol Max R JC 2.0 Symbol Min Typ Max V (BR)DSS 65 — — I DSS — — 1.0 I GSS — — 10 MRF284 MRF284S by MRF284/D Unit Vdc Vdc Watts Unit C/W Unit Vdc Adc Adc 1 ...

Page 2

... Vdc, P out = 200 mA 2000.0 MHz) Drain Efficiency ( Vdc, P out = 200 mA 2000.0 MHz) Output Mismatch Stress ( Vdc, P out = 200 mA 2000.0 MHz, VSWR = 10:1, at All Phase Angles) MRF284 MRF284S 2 Symbol Min Typ Max V GS(th) 2.0 3.0 4 ...

Page 3

... Microstrip 0.210 x 0.515 Microstrip 0.130 x 0.515 Microstrip 0.080 x 0.515 Microstrip 0.190 x 0.325 Microstrip 0.090 x 0.325 Microstrip 0.515 x 0.080 Microstrip 0.860 x 0.080 Microstrip 0.510 x 0.080 Microstrip 0.030 Glass Teflon Copper Dimensions, Manufacturer; Arlon, P/N: GX0300–55–22 2.55 MRF284 MRF284S ...

Page 4

... Transistor, PNP, Motorola P/N: MJD32, Case 369A–10 R1 360 , Fixed Film Chip Resistor 0. Fixed Film Chip Resistor 0. Wirewound Resistor 6 Fixed Film Chip Resistor 0.08 x 0.13 Figure 2. Schematic of 2.0 GHz Class A Test Circuit MRF284 MRF284S C11 C13 ...

Page 5

... Figure 8. Power Gain versus Output Power Vdc 200 mA Single Tone 1880 1900 1920 1940 1960 1980 2000 f, FREQUENCY (MHz) –10 – –20 –25 –30 IMD –35 – Vdc 2000.0 MHz 2000.1 MHz 1.0 10 MRF284 MRF284S 5 ...

Page 6

... Figure 11. Class A Third Order Intercept Point MRF284 MRF284S 6 TYPICAL CHARACTERISTICS 100 T flange = DRAIN SOURCE VOLTAGE (VOLTS) Figure 10. Capacitance versus FUNDAMENTAL 3rd Order Vdc ...

Page 7

... This graph displays calculated MTBF in hours x ampere 2 drain current. Life tests at elevated temperature have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTBF factor for MTBF in a particular application –32 3.0 2.0 –36 1.0 –40 2000 250 MRF284 MRF284S 7 ...

Page 8

... Figure 14. Series Equivalent Input and Output Impedence MRF284 MRF284S 1.8 GHz 0 1.8 GHz – 200 mA, P out = 15 W avg ( MHz 1800 1.0 + j0.4 2.1 – j0.4 1860 1.0 + j0.8 2.2 + j0.2 1900 1.0 + j1.1 2.3 + j0.5 1960 1.0 + j1.4 2.5 + j0.9 2000 1.0 + j2.3 2.6 + j0. (1)= Conjugate of fixture base terminal impedance. ...

Page 9

... MRF284 MRF284S 9 ...

Page 10

... MRF284 MRF284S 10 NOTES MOTOROLA RF DEVICE DATA ...

Page 11

... N 0.350 0.370 8.89 9.39 Q 0.120 0.140 3.05 3.55 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE INCHES MILLIMETERS MIN MAX MIN MAX 0.370 0.390 9.40 9.91 0.220 0.240 5.59 6.09 0.105 0.155 2.67 3.94 0.205 0.225 5.21 5.71 0.035 0.045 0.89 1.14 0.004 0.006 0.11 0.15 0.057 0.067 1.45 1.70 0.085 0.115 2.16 2.92 0.350 0.370 8.89 9.39 PIN 1. DRAIN 2. GATE 3. SOURCE MRF284 MRF284S 11 ...

Page 12

... Motorola Fax Back System – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 – http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ MRF284 MRF284S 12 are registered trademarks of Motorola, Inc. Motorola, Inc Equal Mfax is a trademark of Motorola, Inc. ...

Related keywords