MRF284S

Manufacturer Part NumberMRF284S
DescriptionRF power field-effect transistor
ManufacturerMotorola
MRF284S datasheet
 


1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
9
Page 9
10
Page 10
11
12
Page 1/12

Download datasheet (135Kb)Embed
Next
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for PCN and PCS base station applications at frequencies from
1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier
applications. To be used in class A and class AB for PCN–PCS/cellular radio
and wireless local loop.
Specified Two–Tone Performance @ 2000 MHz, 26 Volts
Output Power = 30 Watts (PEP)
Power Gain = 9 dB
Efficiency = 30%
Intermodulation Distortion = –29 dBc
Typical Single–Tone Performance at 2000 MHz, 26 Volts
Output Power = 30 Watts (CW)
Power Gain = 9.5 dB
Efficiency = 45%
Characterized with Series Equivalent Large–Signal Impedance Parameters
S–Parameter Characterization at High Bias Levels
Excellent Thermal Stability
Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 30 Watts (CW)
Output Power
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T C = 25 C
Derate above 25 C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS
(T C = 25 C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V GS = 0, I D = 10 Adc)
Zero Gate Voltage Drain Current
(V DS = 20 Vdc, V GS = 0)
Gate–Source Leakage Current
(V GS = 20 Vdc, V DS = 0)
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 3
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
Order this document
MRF284
MRF284S
30 W, 2000 MHz, 26 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B–01, STYLE 1
(MRF284)
CASE 360C–03, STYLE 1
(MRF284S)
Symbol
Value
V DSS
65
V GS
20
P D
87.5
0.5
T stg
– 65 to +150
T J
200
Symbol
Max
R JC
2.0
Symbol
Min
Typ
Max
V (BR)DSS
65
I DSS
1.0
I GSS
10
MRF284 MRF284S
by MRF284/D
Unit
Vdc
Vdc
Watts
W/ C
C
C
Unit
C/W
Unit
Vdc
Adc
Adc
1

MRF284S Summary of contents