MRF182

Manufacturer Part NumberMRF182
DescriptionRF power field effect transistor
ManufacturerMotorola
MRF182 datasheet
 


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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power
Field Effect Transistors
N–Channel Enhancement–Mode Lateral
MOSFETs
High Gain, Rugged Device
Broadband Performance from HF to 1 GHz
Bottom Side Source Eliminates DC Isolators, Reducing Common
Mode Inductances
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T C = 70 C
Derate above 70 C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS
(T C = 25 C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
m
(V GS = 0, I D = 1.0
Adc)
Zero Gate Voltage Drain Current
(V DS = 28 V, V GS = 0)
Gate–Source Leakage Current
(V GS = 20 V, V DS = 0)
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 5
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
MRF182
MRF182S
LATERAL N–CHANNEL
RF POWER MOSFETs
D
CASE 360B–01, STYLE 1
G
S
CASE 360C–03, STYLE 1
Symbol
V DSS
V GS
P D
T stg
– 65 to +150
T J
Symbol
R JC
Symbol
Min
Typ
V (BR)DSS
65
I DSS
I GSS
Order this document
by MRF182/D
30 W, 1.0 GHz
BROADBAND
(MRF182)
(MRF182S)
Value
Unit
65
Vdc
20
Vdc
74
W
0.57
W/ C
C
200
C
Max
Unit
1.75
C/W
Max
Unit
Vdc
1
Adc
1
Adc
MRF182
1

MRF182 Summary of contents