MRF182 Motorola, MRF182 Datasheet

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MRF182

Manufacturer Part Number
MRF182
Description
RF power field effect transistor
Manufacturer
Motorola
Datasheet

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MRF182S
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power
Field Effect Transistors
N–Channel Enhancement–Mode Lateral
MOSFETs
REV 5
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
MOTOROLA RF DEVICE DATA
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T C = 70 C
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Drain–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Source Leakage Current
Motorola, Inc. 1997
High Gain, Rugged Device
Broadband Performance from HF to 1 GHz
Bottom Side Source Eliminates DC Isolators, Reducing Common
Mode Inductances
Derate above 70 C
(V GS = 0, I D = 1.0
(V DS = 28 V, V GS = 0)
(V GS = 20 V, V DS = 0)
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
m
Adc)
Characteristic
Characteristic
Rating
(T C = 25 C unless otherwise noted)
G
V (BR)DSS
Symbol
I DSS
I GSS
D
S
Symbol
Symbol
V DSS
R JC
V GS
T stg
Min
P D
T J
65
CASE 360B–01, STYLE 1
CASE 360C–03, STYLE 1
MRF182S
LATERAL N–CHANNEL
Typ
RF POWER MOSFETs
MRF182
– 65 to +150
30 W, 1.0 GHz
BROADBAND
Value
0.57
Max
1.75
(MRF182S)
200
(MRF182)
65
74
20
Max
Order this document
1
1
by MRF182/D
MRF182
W/ C
Unit
Unit
Unit
Vdc
Vdc
Vdc
C/W
Adc
Adc
W
C
C
1

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MRF182 Summary of contents

Page 1

... Symbol V DSS stg – +150 T J Symbol R JC Symbol Min Typ V (BR)DSS 65 – I DSS – – I GSS – – Order this document by MRF182 1.0 GHz BROADBAND (MRF182) (MRF182S) Value Unit 65 Vdc 20 Vdc 200 C Max Unit 1.75 C/W Max Unit – ...

Page 2

... Vdc, P out = mA 945 MHz, Load VSWR 5:1 at All Phase Angles) Series Equivalent Input Impedance ( Vdc, P out = mA 960 MHz) Series Equivalent Output Impedance ( Vdc, P out = mA 960 MHz) MRF182 unless otherwise noted) Symbol Min V GS(th) ...

Page 3

... DUT TL2 TL3 C3 C14 TL1–TL4 Ckt Board Figure 1. MRF182 Schematic R4 C11 C12 C13 C10 C4 RF OUTPUT TL4 5 Turns, 20 AWG, IDIA 0.126 1/4 W Resistor 1/4 W Resistor 1 1/4 W Chip Resistor 1/8 W Chip Resistor Microstrip Line See Photomaster 1/32 Glass Teflon 2.55 ARLON– ...

Page 4

... Output Power at 1 GHz 13.5 Vdc GHz 0 INPUT POWER (WATTS) Figure 6. Output Power versus Input Power MRF182 4 TYPICAL CHARACTERISTICS Vdc GHz Figure 3. Power Gain versus 30 ...

Page 5

... MRF182 5 ...

Page 6

... MRF182 1 54.39 129 0.014 43.46 118 0.017 34.35 109 0.018 28.27 103 0.018 23.38 98 0.019 20.10 95 0.019 17 ...

Page 7

... N 0.350 0.370 8.89 9.39 Q 0.120 0.140 3.05 3.55 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.370 0.390 9.40 9.91 B 0.220 0.240 5.59 6.09 C 0.105 0.155 2.67 3.94 D 0.205 0.225 5.21 5.71 E 0.035 0.045 0.89 1.14 F 0.004 0.006 0.11 0.15 H 0.057 0.067 1.45 1.70 K 0.085 0.115 2.16 2.92 N 0.350 0.370 8.89 9.39 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE MRF182 7 ...

Page 8

... Motorola, Inc. Motorola, Inc Equal Mfax is a trademark of Motorola, Inc. JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, MOTOROLA RF DEVICE DATA MRF182/D ...

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