MRF148

Manufacturer Part NumberMRF148
DescriptionRF power field-effect transistor
ManufacturerMotorola
MRF148 datasheet
 


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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field-Effect Transistor
N–Channel Enhancement–Mode
Designed for power amplifier applications in industrial, commercial and
amateur radio equipment to 175 MHz.
Superior High Order IMD
Specified 50 Volts, 30 MHz Characteristics
Output Power = 30 Watts
Power Gain = 18 dB (Typ)
Efficiency = 40% (Typ)
IMD (d3) (30 W PEP) — – 35 dB (Typ)
IMD (d11) (30 W PEP) — – 60 dB (Typ)
100% Tested For Load Mismatch At All Phase Angles With
30:1 VSWR
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T C = 25 C
Derate above 25 C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1995
MRF148
30 W, to 175 MHz
N–CHANNEL MOS
LINEAR RF POWER
D
G
CASE 211–07, STYLE 2
S
Symbol
Value
V DSS
V DGO
V GS
I D
P D
T stg
– 65 to +150
T J
Symbol
R JC
Order this document
by MRF148/D
FET
Unit
120
Vdc
120
Vdc
40
Vdc
6.0
Adc
115
Watts
0.66
W/ C
C
200
C
Max
Unit
1.52
C/W
MRF148
1

MRF148 Summary of contents