MRF148 Motorola, MRF148 Datasheet

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MRF148

Manufacturer Part Number
MRF148
Description
RF power field-effect transistor
Manufacturer
Motorola
Datasheet

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field-Effect Transistor
N–Channel Enhancement–Mode
amateur radio equipment to 175 MHz.
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
MOTOROLA RF DEVICE DATA
Drain–Source Voltage
Drain–Gate Voltage
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T C = 25 C
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for power amplifier applications in industrial, commercial and
Motorola, Inc. 1995
Superior High Order IMD
Specified 50 Volts, 30 MHz Characteristics
IMD (d3) (30 W PEP) — – 35 dB (Typ)
IMD (d11) (30 W PEP) — – 60 dB (Typ)
100% Tested For Load Mismatch At All Phase Angles With
30:1 VSWR
Derate above 25 C
Output Power = 30 Watts
Power Gain = 18 dB (Typ)
Efficiency = 40% (Typ)
Characteristic
Rating
G
D
S
Symbol
Symbol
V DGO
V DSS
R JC
V GS
T stg
P D
I D
T J
CASE 211–07, STYLE 2
MRF148
– 65 to +150
LINEAR RF POWER
N–CHANNEL MOS
30 W, to 175 MHz
Value
0.66
Max
1.52
120
120
200
115
6.0
40
FET
Order this document
by MRF148/D
MRF148
Watts
W/ C
Unit
Unit
Vdc
Vdc
Vdc
Adc
C/W
C
C
1

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MRF148 Summary of contents

Page 1

... N–CHANNEL MOS LINEAR RF POWER D G CASE 211–07, STYLE 2 S Symbol Value V DSS V DGO stg – +150 T J Symbol R JC Order this document by MRF148/D FET Unit 120 Vdc 120 Vdc 40 Vdc 6.0 Adc 115 Watts 0. 200 C Max Unit 1 ...

Page 2

... T1 INPUT C8 R2 C1, C2, C3, C4, C5, C6 — 0.1 F Ceramic Chip or Equivalent C7 — 100 V Electrolytic C8 — 100 pF Dipped Mica L1 — VK200 20/4B Ferrite Choke or Equivalent (3 — Ferrite Bead(s), 2.0 H Figure 1. 2 MHz Broadband Test Circuit MRF148 2 Symbol V (BR)DSS I DSS I GSS V GS(th) V DS(on iss C oss ...

Page 3

... Coaxial Cable Figure 6. 150 MHz Test Circuit 100 100 mA 1 1 INPUT POWER (WATTS DRAIN CURRENT (AMPS) versus Drain Current + 50 Vdc C5 RF OUTPUT 12.5 T1 — 4:1 Impedance Ratio T1 — Transformer, Line T1 — Impedance = 25 MRF148 3 ...

Page 4

... GATE–SOURCE VOLTAGE (VOLTS) Figure 7. Gate Voltage versus Drain Current Figure 9. Impedance Coordinates — 50 Ohm MRF148 0 1.2 mho 0.2 0 0.2 0.4 0 DRAIN–SOURCE VOLTAGE (VOLTS) Figure 8. DC Safe Operating Area (SOA) ...

Page 5

... Gate Protection — These devices do not have an internal monolithic zener diode from gate–to–source. If gate protection is required, an external zener diode is recommended Drain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Source Base . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V (BR)DSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V DGO CES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I DSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I GSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V GS(th DS(on iss oss DS(on DS(on MRF148 5 ...

Page 6

... INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.960 0.990 24.39 25.14 B 0.370 0.390 9.40 9.90 C 0.229 0.281 5.82 7.13 D 0.215 0.235 5.47 5.96 E 0.085 0.105 2.16 2.66 H 0.150 0.108 3.81 4.57 J 0.004 0.006 0.11 0.15 K 0.395 0.405 10.04 10. 0.113 0.130 2.88 3.30 R 0.245 0.255 6.23 6.47 S 0.790 0.810 20.07 20.57 U 0.720 0.730 18.29 18.54 *MRF148/D* MRF148/D MOTOROLA RF DEVICE DATA ...

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