MRF183S

Manufacturer Part NumberMRF183S
DescriptionRF power field effect transistor
ManufacturerMotorola
MRF183S datasheet
 


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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power
Field Effect Transistors
N–Channel Enhancement–Mode Lateral
MOSFETs
Designed for broadband commercial and industrial applications at frequen-
cies to 1.0 GHz. The high gain and broadband performance of these devices
makes ithem ideal for large–signal, common source amplifier applications in 28
volt base station equipment.
Guaranteed Performance at 945 MHz, 28 Volts
Output Power – 45 Watts PEP
Power Gain – 11.5 dB
Efficiency – 33%
IMD – 28 dBc
Characterized with Series Equivalent Large–Signal
Impedance Parameters
S–Parameter Characterization at High Bias Levels
Excellent Thermal Stability
100% Tested for Load Mismatch Stress at all Phase Angles
with 5:1 VSWR @ 28 Vdc, 945 MHz, 45 Watts CW
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1 Meg Ohm)
Gate–Source Voltage
Drain Current – Continuous
Total Device Dissipation @ T C = 70 C
Derate above 70 C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
MRF183
MRF183S
45 W, 1.0 GHz
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
D
CASE 360B–01, STYLE 1
G
CASE 360C–03, STYLE 1
S
Symbol
V DSS
V DGR
V GS
I D
P D
T stg
– 65 to +200
T J
Symbol
R JC
Order this document
by MRF183/D
(MRF183)
(MRF183S)
Value
Unit
65
Vdc
65
Vdc
20
Vdc
5
Adc
86
W
0.67
W/ C
C
200
C
Max
Unit
1.5
C/W
MRF183 MRF183S
1

MRF183S Summary of contents