MRF6414 Motorola, MRF6414 Datasheet

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MRF6414

Manufacturer Part Number
MRF6414
Description
NPN silicon RF power transistor
Manufacturer
Motorola
Datasheet

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
class AB linear amplifier applications.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
MOTOROLA RF DEVICE DATA
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector–Current — Continuous
Total Device Dissipation @ T C = 25 C
Storage Temperature Range
Thermal Resistance, Junction to Case
Collector–Emitter Breakdown Voltage (I C = 20 mAdc, I B = 0)
Collector–Base Breakdown Voltage (I C = 20 mAdc, I E = 0)
Emitter–Base Breakdown Voltage (I E = 10 mAdc, I C = 0)
Collector–Emitter Leakage Current (V CE = 30 Vdc, R BE = 75 )
DC Current Gain (I CE = 1 Adc, V CE = 5 Vdc)
The MRF6414 is designed for 26 volt UHF large signal, common emitter,
Motorola, Inc. 1995
Specified 26 Volt, 960 MHz Characteristics
Silicon Nitride Passivated
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Circuit Board Photomaster Available by Ordering Document
MRF6414PHT/D from Motorola Literature Distribution.
Derate above 25 C
Output Power = 50 Watts
Minimum Gain = 8.5 dB @ 960 MHz, Class AB
Minimum Efficiency = 50% @ 960 MHz, 50 Watts
Characteristic
Characteristic
Rating
(T C = 25 C unless otherwise noted)
V (BR)CEO
V (BR)CBO
V (BR)EBO
Symbol
I CER
h FE
Symbol
Symbol
V CEO
V CBO
V EBO
R JC
T stg
Min
P D
28
65
30
I C
4
RF POWER TRANSISTOR
CASE 333A– 02, STYLE 2
Typ
MRF6414
– 65 to +150
50 W, 960 MHz
NPN SILICON
Value
0.77
Max
134
1.3
28
65
4
6
Max
120
Order this document
10
by MRF6414/D
MRF6414
mAdc
Watts
W/ C
Unit
Unit
Unit
Vdc
Vdc
Vdc
Adc
Vdc
Vdc
Vdc
C/W
C
1

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MRF6414 Summary of contents

Page 1

... MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. Specified 26 Volt, 960 MHz Characteristics Output Power = 50 Watts Minimum Gain = 8 960 MHz, Class AB Minimum Efficiency = 50% @ 960 MHz, 50 Watts ...

Page 2

... Collector Efficiency ( Vdc, P out = 200 mA 960 MHz) Output Mismatch Stress ( Vdc, P out = 200 mA 960 MHz) VSWR = 3:1; all phase angles at frequency of test (1) For information only not measurable in MRF6414 because of internal matching network ...

Page 3

... 200 960 MHz 4 920 930 Figure 5. Typical Broadband Amplifier 200 mA 920 940 960 980 f, FREQUENCY (MHz) 1.6 1.4 VSWR 1.2 940 950 960 970 f, FREQUENCY (MHz) MRF6414 ...

Page 4

... C1 C2 INPUT Figure 6. 960 MHz Test Circuit Components Layout Z* load Z in Figure 7. Input and Output Impedances with Circuit Tuned for Maximum Gain @ 200 mA, P out = 50 W MRF6414 4 C6 MRF6414 OUTPUT Normalized MHz Ohms 900 4 ...

Page 5

... INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.965 0.985 24.52 25.01 B 0.390 0.410 9.91 10.41 C 0.250 0.290 6.35 7.36 D 0.075 0.090 1.91 2.28 E 0.095 0.115 2.42 2.92 F 0.110 0.130 2.80 3.30 H 0.155 0.175 3.94 4.44 J 0.004 0.006 0.11 0.15 K 0.090 0.116 2.29 2.94 L 0.725 BSC 18.41 BSC N 0.415 0.435 10.55 11.04 Q 0.120 0.135 3.05 3.42 STYLE 2: PIN 1. EMITTER 2. BASE 3. EMITTER 4. EMITTER 5. COLLECTOR 6. EMITTER MRF6414 5 ...

Page 6

... JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 *MRF6414/D* MOTOROLA RF DEVICE DATA MRF6414/D ...

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