MRF6414

Manufacturer Part NumberMRF6414
DescriptionNPN silicon RF power transistor
ManufacturerMotorola
MRF6414 datasheet
 


1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
Page 1/6

Download datasheet (109Kb)Embed
Next
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
The MRF6414 is designed for 26 volt UHF large signal, common emitter,
class AB linear amplifier applications.
Specified 26 Volt, 960 MHz Characteristics
Output Power = 50 Watts
Minimum Gain = 8.5 dB @ 960 MHz, Class AB
Minimum Efficiency = 50% @ 960 MHz, 50 Watts
Silicon Nitride Passivated
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Circuit Board Photomaster Available by Ordering Document
MRF6414PHT/D from Motorola Literature Distribution.
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector–Current — Continuous
Total Device Dissipation @ T C = 25 C
Derate above 25 C
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS
(T C = 25 C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (I C = 20 mAdc, I B = 0)
Collector–Base Breakdown Voltage (I C = 20 mAdc, I E = 0)
Emitter–Base Breakdown Voltage (I E = 10 mAdc, I C = 0)
Collector–Emitter Leakage Current (V CE = 30 Vdc, R BE = 75 )
ON CHARACTERISTICS
DC Current Gain (I CE = 1 Adc, V CE = 5 Vdc)
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1995
MRF6414
50 W, 960 MHz
RF POWER TRANSISTOR
NPN SILICON
CASE 333A– 02, STYLE 2
Symbol
Value
V CEO
28
V CBO
65
V EBO
4
I C
6
P D
134
0.77
T stg
– 65 to +150
Symbol
Max
R JC
1.3
Symbol
Min
Typ
V (BR)CEO
28
V (BR)CBO
65
V (BR)EBO
4
I CER
h FE
30
Order this document
by MRF6414/D
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/ C
C
Unit
C/W
Max
Unit
Vdc
Vdc
Vdc
10
mAdc
120
MRF6414
1

MRF6414 Summary of contents