TC58DVM92A1FT00

Manufacturer Part NumberTC58DVM92A1FT00
ManufacturerTOSHIBA Semiconductor CORPORATION
TC58DVM92A1FT00 datasheet
 


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TENTATIVE
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
512-MBIT (64M u 8 BITS) CMOS NAND E
DESCRIPTION
The device is a single 3.3 V 1-Gbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only
2
Memory (NAND E
PROM) organized as 528 bytes u 32 pages u 4096 blocks. The device has a 528-byte static register
which allows program and read data to be transferred between the register and the memory cell array in 528-byte
increments. The Erase operation is implemented in a single block unit (16 Kbytes  512 bytes: 528 bytes u 32 pages).
The device is a serial-type memory device which utilizes the I/O pins for both address and data input/output as
well as for command inputs. The Erase and Program operations are automatically executed making the device most
suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and
other systems which require high-density non-volatile memory data storage.
FEATURES
x Organization
Memory cell allay 528 u 128K u 8
Register
528 u 8
Page size
528 bytes
Block size
(16K  512) bytes
x Modes
Read, Reset, Auto Page Program,
Auto Block Erase, Status Read,
Multi Block Program, Multi Block Erase
x Mode control
Serial input/output
Command control
PIN ASSIGNMENT
(TOP VIEW)
NC
1
NC
2
NC
3
NC
4
NC
5
GND
6
7
RY
/
BY
RE
8
CE
9
NC
10
NC
11
V
12
CC
V
13
SS
NC
14
NC
15
CLE
16
ALE
17
WE
18
WP
19
NC
20
NC
21
NC
22
NC
23
NC
24
x TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid
situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to
property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most
recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide
for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
x The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control
instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
shall be made at the customer’s own risk.
x The products described in this document are subject to the foreign exchange and foreign trade laws.
x The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
x The information contained herein is subject to change without notice.
2
PROM
x Power supply
x Program/Erase Cycles 1E5 cycle (with ECC)
x Access time
Cell array to register 25 Ps max
Serial Read Cycle
x Operating current
Read (50 ns cycle)
Program (avg.)
Erase (avg.)
Standby
x Package
TSOPI48-P-1220-0.50 (Weight: 0.53g typ.)
PIN NAMES
48
NC
I/O1 to I/O8
I/O port
47
NC
46
NC
CE
Chip enable
45
NC
44
I/O8
WE
Write enable
43
I/O7
42
I/O6
RE
Read enable
41
I/O5
40
NC
CLE
Command latch enable
39
NC
ALE
Address latch enable
38
NC
37
V
CC
WP
Write protect
36
V
SS
35
NC
RY
/
BY
Ready/Busy
34
NC
33
NC
GND
Ground input
32
I/O4
31
I/O3
V
Power supply
30
I/O2
CC
29
I/O1
V
Ground
28
NC
SS
27
NC
26
NC
25
NC
TC58DVM92A1FT00
V
2.7 V to 3.6 V
CC
50 ns min
10 mA typ.
10 mA typ.
10 mA typ.
50 PA max.
000707EBA1
2003-01-10 1/44

TC58DVM92A1FT00 Summary of contents