MMDF2P01HDR2 Motorola, MMDF2P01HDR2 Datasheet

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MMDF2P01HDR2

Manufacturer Part Number
MMDF2P01HDR2
Description
TMOS P-channel field effect transistor
Manufacturer
Motorola
Datasheet

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Designer's
Medium Power Surface Mount Products
TMOS P-Channel
Field Effect Transistors
which utilize Motorola’s High Cell Density HDTMOS process.
These miniature surface mount MOSFETs feature ultra low R DS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain–to–source diode has a very low reverse recovery time.
MiniMOS devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in
portable and battery powered products such as computers,
printers, cellular and cordless phones. They can also be used for
low voltage motor controls in mass storage products such as disk
drives and tape drives.
(1) Negative sign for P–Channel device omitted for clarity.
(2) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10 sec. max.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s, HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 5
MAXIMUM RATINGS
DEVICE MARKING
Motorola TMOS Power MOSFET Transistor Device Data
Drain–to–Source Voltage
Drain–to–Gate Voltage (R GS = 1.0 M )
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ T A = 25 C
Drain Current
Drain Current
Total Power Dissipation @ T A = 25 C (2)
Operating and Storage Temperature Range
Thermal Resistance — Junction to Ambient (2)
Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds
D2P01
MMDF2P01HDR2
MiniMOS
Motorola, Inc. 1996
Ultra Low R DS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package — Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
I DSS Specified at Elevated Temperature
Mounting Information for SO–8 Package Provided
Device
devices are an advanced series of power MOSFETs
— Continuous @ T A = 100 C
— Single Pulse (t p
(T J = 25 C unless otherwise noted) (1)
Reel Size
ORDERING INFORMATION
Data Sheet
13
10 s)
12 mm embossed tape
Tape Width
Rating
2500 units
Quantity
G
D
S
Symbol
V DGR
V DSS
Source–1
Source–2
R JA
MMDF2P01HD
DUAL TMOS POWER FET
V GS
I DM
P D
T L
Gate–1
Gate–2
I D
I D
R DS(on) = 0.18 OHM
CASE 751–05, Style 11
– 55 to 150
Motorola Preferred Device
2.0 AMPERES
12 VOLTS
Order this document
by MMDF2P01HD/D
SO–8
Top View
Value
1
2
3
4
62.5
260
3.4
2.1
2.0
12
12
17
8.0
8
7
6
5
Watts
Drain–1
Drain–1
Drain–2
Drain–2
Unit
Vdc
Vdc
Vdc
Adc
Apk
C/W
C
C
1

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MMDF2P01HDR2 Summary of contents

Page 1

... Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10 sec. max. ORDERING INFORMATION Device Reel Size MMDF2P01HDR2 embossed tape Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — ...

Page 2

... S = 2.0 Adc Vdc 2.0 Adc Vdc 2.0 Adc Vdc /dt = 100 /dt = 100 /dt = 100 /dt = 100 2%. Motorola TMOS Power MOSFET Transistor Device Data Min Typ Max Unit Vdc 12 — — — ...

Page 3

... Figure 3. On–Resistance versus Gate–To–Source Voltage 4 1.5 1 0.5 0 – 50 – JUNCTION TEMPERATURE ( C) Figure 5. On–Resistance Variation with Temperature Motorola TMOS Power MOSFET Transistor Device Data 1 1.4 1 GATE– ...

Page 4

... iss C rss GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (Volts) Figure 7. Capacitance Variation Motorola TMOS Power MOSFET Transistor Device Data C iss C oss C rss 12 ...

Page 5

... A ratio considered ideal and values less than 0.5 are considered snappy. Compared to Motorola standard cell density low voltage MOSFETs, high cell density MOSFET diodes are faster (shorter have less stored charge and a softer reverse re- covery characteristic ...

Page 6

... SINGLE PULSE DS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 12. Maximum Rated Forward Biased Safe Operating Area Motorola TMOS Power MOSFET Transistor Device Data 100 ...

Page 7

... TYPICAL ELECTRICAL CHARACTERISTICS 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 1.0E–05 1.0E–04 1.0E–03 Figure 14. Diode Reverse Recovery Waveform Motorola TMOS Power MOSFET Transistor Device Data Normalized 10s. Chip 0.0175 0.0710 0.0154 F 0.0854 F 1.0E–02 1.0E–01 1.0E+00 t, TIME (s) Figure 13. Thermal Response di/ 0. ...

Page 8

... Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. Motorola TMOS Power MOSFET Transistor Device Data 150 C – 2.0 Watts 62.5 C/W ...

Page 9

... C 100 TIME ( MINUTES TOTAL) Motorola TMOS Power MOSFET Transistor Device Data TYPICAL SOLDER HEATING PROFILE line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board ...

Page 10

... Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “ ...

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