MRF184 Motorola, MRF184 Datasheet

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MRF184

Manufacturer Part Number
MRF184
Description
RF power field effect transistor
Manufacturer
Motorola
Datasheet

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF POWER Field-Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
cies to 1.0 GHz. The high gain and broadband performance of these devices
makes them ideal for large–signal, common source amplifier applications in 28
volt base station equipment.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
REV 2
MOTOROLA RF DEVICE DATA
Drain–Source Voltage
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T C = 70 C
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Drain–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Source Leakage Current
Designed for broadband commercial and industrial applications at frequen-
Motorola, Inc. 1997
Guaranteed Performance @ 945 MHz, 28 Volts
Characterized with Series Equivalent Large–Signal
Impedance Parameters
S–Parameter Characterization at High Bias Levels
Excellent Thermal Stability
Capable of Handling 30:1 VSWR @ 28 Vdc,
945 MHz
Derate above 70 C
(V GS = 0 V, I D = 1
(V DS = 28 V, V GS = 0 V)
(V GS = 20 V, V DS = 0 V)
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power = 60 Watts
Power Gain = 11.5 dB
Efficiency = 53%
m
Adc)
Characteristic
Characteristic
Rating
(T C = 25 C unless otherwise noted)
G
V (BR)DSS
Symbol
I DSS
I GSS
D
S
Symbol
Symbol
V DSS
R JC
V GS
T stg
Min
P D
T J
I D
65
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 360B–01, STYLE 1
MRF184S
Typ
CASE 360C–03, STYLE 1
MRF184
– 65 to +150
BROADBAND
60 W, 1.0 GHz
Value
Max
200
118
0.9
1.1
(MRF184)
65
(MRF184S)
7
20
Max
MRF184 MRF184S
Order this document
1
1
by MRF184/D
Watts
W/ C
Unit
Unit
Unit
Vdc
Vdc
Adc
Vdc
C/W
Adc
Adc
C
C
1

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MRF184 Summary of contents

Page 1

... Symbol R JC Symbol Min Typ V (BR)DSS 65 – I DSS – – I GSS – – Order this document by MRF184 1.0 GHz BROADBAND (MRF184) (MRF184S) Value Unit 65 Vdc 20 Vdc 7 Adc 118 Watts 0 200 C Max Unit 1.1 C/W Max Unit – Vdc 1 Adc 1 Adc MRF184 MRF184S 1 ...

Page 2

... C oss – C rss – 11 DUT TL2 TL3 TL1–TL4 Ckt Board Figure 1. MRF184 Test Circuit Schematic Typ Max Unit 3 4 Vdc 4 5 Vdc 0.65 0.8 Vdc 2.6 – – – pF 4.3 – – ...

Page 3

... Figure 7. Output Power versus Gate Voltage 600 Vdc 400 945 MHz f2 = 945.1 MHz 1 10 100 Output Power Vdc 400 945 MHz 14 1 1 INPUT POWER (WATTS Vdc 2 945 MHz 1.5 2 3 4.5 MRF184 MRF184S 3 ...

Page 4

... 175 0 DRAIN VOLTAGE (Vdc) Figure 12. DC Safe Operating Area MRF184 MRF184S 4 TYPICAL CHARACTERISTICS 2.5 TYPICAL DEVICE SHOWN 2 1.0 W 1.5 1 0.5 W 0.5 0 960 980 1000 GATE VOLTAGE (VOLTS) Figure 9. Drain Current versus Gate Voltage 6 5 ...

Page 5

... Figure 14. Class A Third Order Intercept Point C1 TL1 MOTOROLA RF DEVICE DATA FUNDAMENTAL 3rd ORDER Vdc 2 945 MHz f2 = 945.1 MHz INPUT POWER (dBm TL2 TL3 C3 Figure 15. Component Parts Layout 40 C10 B1 C11 R4 C12 C13 L1 C4 TL4 XRF184 MRF184 MRF184S 5 ...

Page 6

... Note was chosen based on tradeoffs between gain, drain efficiency and device stability. Figure 16. Series Equivalent Input and Output Impedance MRF184 MRF184S 1000 MHz 950 f = 1000 MHz 950 900 850 800 Vdc 100 mA, P out = 60 W ...

Page 7

... MRF184 MRF184S 7 ...

Page 8

... MRF184 MRF184S 2 16.01 84 0.016 13.73 82 0.015 12.02 80 0.014 10.62 78 0.013 6.76 71 0.012 4.92 65 0.011 3.82 60 ...

Page 9

... SOURCE Y14.5M, 1982. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.370 0.390 9.40 9.91 B 0.220 0.240 5.59 6.09 C 0.105 0.155 2.67 3.94 D 0.205 0.225 5.21 5.71 E 0.035 0.045 0.89 1.14 F 0.004 0.006 0.11 0.15 H 0.057 0.067 1.45 1.70 K 0.085 0.115 2.16 2.92 N 0.350 0.370 8.89 9.39 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE Mfax is a trademark of Motorola, Inc. MRF184/D MRF184 MRF184S 9 ...

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