MRF184

Manufacturer Part NumberMRF184
DescriptionRF power field effect transistor
ManufacturerMotorola
MRF184 datasheet
 


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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF POWER Field-Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications at frequen-
cies to 1.0 GHz. The high gain and broadband performance of these devices
makes them ideal for large–signal, common source amplifier applications in 28
volt base station equipment.
Guaranteed Performance @ 945 MHz, 28 Volts
Output Power = 60 Watts
Power Gain = 11.5 dB
Efficiency = 53%
Characterized with Series Equivalent Large–Signal
Impedance Parameters
S–Parameter Characterization at High Bias Levels
Excellent Thermal Stability
Capable of Handling 30:1 VSWR @ 28 Vdc,
945 MHz
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T C = 70 C
Derate above 70 C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS
(T C = 25 C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
m
(V GS = 0 V, I D = 1
Adc)
Zero Gate Voltage Drain Current
(V DS = 28 V, V GS = 0 V)
Gate–Source Leakage Current
(V GS = 20 V, V DS = 0 V)
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 2
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
MRF184
MRF184S
LATERAL N–CHANNEL
RF POWER MOSFETs
D
CASE 360B–01, STYLE 1
G
CASE 360C–03, STYLE 1
S
Symbol
V DSS
V GS
I D
P D
T stg
– 65 to +150
T J
Symbol
R JC
Symbol
Min
Typ
V (BR)DSS
65
I DSS
I GSS
Order this document
by MRF184/D
60 W, 1.0 GHz
BROADBAND
(MRF184)
(MRF184S)
Value
Unit
65
Vdc
20
Vdc
7
Adc
118
Watts
0.9
W/ C
C
200
C
Max
Unit
1.1
C/W
Max
Unit
Vdc
1
Adc
1
Adc
MRF184 MRF184S
1

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