M54532P MITSUBISHI, M54532P Datasheet

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M54532P

Manufacturer Part Number
M54532P
Description
4-unit 1.5A darlington transistor array with clamp diode
Manufacturer
MITSUBISHI
Datasheet

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DESCRIPTION
M54532P and M54532FP are four-circuit Darlington transis-
tor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits
perform high-current driving with extremely low input-current
supply.
FEATURES
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and power amplification
FUNCTION
The M54532P and M54532FP each have four circuits con-
sisting of NPN Darlington transistors. They have resistance
of 340
clamping diode is provided between each output pin (collec-
tor) and COM pin. The output transistor emitters are all con-
nected to the GND pin.
The collector current is 1.5A maximum. Collector-emitter
supply voltage is 50V maximum.
The M54532FP is enclosed in a molded small flat package,
enabling space-saving design.
ABSOLUTE MAXIMUM RATINGS
I
V
I
V
V
P
T
T
C
F
High breakdown voltage (BV
High-current driving (Ic(max) = 1.5A)
With clamping diodes
Wide operating temperature range (Ta = –20 to +75 C)
Symbol
opr
stg
CEO
I
R
d
between input transistor bases and input pins. A
Collector-emitter voltage
Collector current
Input voltage
Clamping diode reverse voltage
Clamping diode forward current
Power dissipation
Operating temperature
Storage temperature
Parameter
CEO
(Unless otherwise noted, Ta = –20 ~ +75 C)
50V)
4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
Output, H
Current per circuit output, L
Pulse Width
Pulse Width
Ta = 25 C, when mounted on board
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
10ms, Duty Cycle
100ms, Duty Cycle
Conditions
PIN CONFIGURATION
CIRCUIT DIAGRAM
INPUT
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
COMMON
COMMON
OUTPUT1
OUTPUT2 O2
Package type 16P2N-A(FP)
INPUT1
INPUT2 IN2
COM
COM
The four circuits share the COM and GND.
GND
IN1
O1
340
5%
5%
M54532P/FP
1
2
3
4
5
6
7
8
5.5K
16P4(P)
3K
1.92(P)/1.00(FP)
–55 ~ +125
–0.5 ~ +50
–0.5 ~ +10
–20 ~ +75
Ratings
16
15
14
13
12
11
10
1.25
1.5
1.5
9
50
NC : No connection
NC
GND
NC
O4
IN4
IN3
O3
OUTPUT4
INPUT4
INPUT3
OUTPUT3
GND
COM
OUTPUT
Unit :
Aug. 1999
Unit
W
V
A
V
V
A
C
C

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M54532P Summary of contents

Page 1

... APPLICATION Drives of relays and printers, digit drives of indication ele- ments (LEDs and lamps), and power amplification FUNCTION The M54532P and M54532FP each have four circuits con- sisting of NPN Darlington transistors. They have resistance of 340 between input transistor bases and input pins. A clamping diode is provided between each output pin (collec- tor) and COM pin ...

Page 2

... 50V 1.25A 4V 1A Test conditions C = 15pF (note 1) L TIMING DIAGRAM V O 50% INPUT R L OUTPUT OUTPUT 10V M54532P/FP Unit Limits + min typ max 50 — — — 1.3 2.2 — 1.1 1.7 — 5 8.5 — — 100 — 1.6 2.3 ...

Page 3

... Output Saturation Voltage Collector Current Characteristics = 2mA Ta = 25° –20°C 0.5 1.0 1.5 2.0 (sat) (V) CE (M54532P) •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 75° ...

Page 4

... Input voltage V (V) I MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> Grounded Emitter Transfer Characteristics 1 1.2 0 75° 25°C 0 –20° 0.5 Input voltage V Clamping Diode Characteristics 2.0 1.5 1.0 0 75° 0.5 10 Forward bias voltage V M54532P/FP 1.0 1.5 2.0 ( 25° –20°C 1.0 1.5 2.0 (V) F Aug. 1999 ...

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