2SK1958-T1 NEC, 2SK1958-T1 Datasheet
2SK1958-T1
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2SK1958-T1 Summary of contents
Page 1
... N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK1958 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras. ...
Page 2
... 1.0 MHz mA GS(on 300 G L 2SK1958 TYP. MAX. UNIT 1.0 A 3.0 A 0.8 1 100 ns 110 ns ...
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... DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 200 ˚C A 100 1 500 0 2SK1958 1.8 V 1 Drain to Source Voltage - –25 ˚C A 2 100 200 500 I - Drain Current - ˚ ...
Page 4
... V SWITCHING CHARACTERISTICS 500 GS(on) 200 C iss 100 C oss rss 2SK1958 ˚ Gate to Source Voltage - V GS 0.4 0.6 0.8 1.0 - Source to Drain Voltage - d(on) t d(off) 50 100 ...
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... REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Guide to quality assurance for semiconductor devices Semiconductor selection guide 2SK1958 Document No. TEI-1202 IEI-1209 C10535E MEI-1202 X10679E 5 ...
Page 6
... The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. 2SK1958 M4 94.11 ...