2SK2414-Z-E1 NEC, 2SK2414-Z-E1 Datasheet

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2SK2414-Z-E1

Manufacturer Part Number
2SK2414-Z-E1
Description
Low withstand voltage Nch MOS FET
Manufacturer
NEC
Datasheet

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Document No. D13193EJ2V0DS00 (2nd edition)
(Previous No. TC-2495)
Date Published March 1998 N CP(K)
Printed in Japan
DESCRIPTION
for high voltage switching applications.
FEATURES
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended applica-
tions.
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)*
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Single Avalanche Current**
Single Avalanche Energy**
*
** Starting T
The 2SK2414 is N-Channel MOS Field Effect Transistor designed
Low On-Resistance
Low C
Built-in G-S Gate Protection Diodes
High Avalanche Capability Ratings
PW
R
R
DS(on)1
DS(on)2
iss
10 s, Duty Cycle
ch
= 70 m
= 95 m
C
= 25 ˚C, R
iss
= 840 pF TYP.
MAX. (@ V
MAX. (@ V
G
c
A
The information in this document is subject to change without notice.
= 25
= 25 ˚C)
= 25 ˚C)
1 %
N-CHANNEL POWER MOS FET
GS
GS
, V
= 10 V, I
= 4 V, I
GS
2SK2414, 2SK2414-Z
V
V
I
I
P
P
T
T
I
E
D(DC)
D(pulse)
AS
= 20 V
DSS
GSS
T1
T2
ch
stg
AS
DATA SHEET
INDUSTRIAL USE
A
D
= 25 C)
D
= 5.0 A)
SWITCHING
= 5.0 A)
–55 to +150
0
MOS FIELD EFFECT TRANSISTOR
150
1.0
60
20
10
10
20
10
40
mJ
W
W
V
V
A
A
A
C
C
1.3
MP-3Z (SURFACE MOUNT TYPE)
1.3
MAX.
MAX.
PACKAGE DIMENSIONS
Gate
Gate Protection
Diode
1
6.5 ±0.2
5.0 ±0.2
1 2
6.5 ±0.2
2.3 2.3
5.0 ±0.2
2.3 2.3
(in millimeter)
2 3
4
4
3
MP-3
MAX.
0.6 ±0.1
0.9
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Source
Drain
MAX.
2.3 ±0.2
0.8
2.3 ±0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
0.8
Body
Diode
©
0.6 ±0.1
0.5 ±0.1
0.5 ±0.1
1994

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2SK2414-Z-E1 Summary of contents

Page 1

... DESCRIPTION The 2SK2414 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low On-Resistance MAX DS(on MAX DS(on)2 • Low 840 pF TYP. iss iss • Built-in G-S Gate Protection Diodes • High Avalanche Capability Ratings QUALITY GRADE Standard Please refer to " ...

Page 2

... F(S- 220 nC rr Test Circuit 2 Switching Time D.U. Duty Cycle 2SK2414, 2SK2414-Z TEST CONDITIONS ...

Page 3

... T DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 Pulsed 2SK2414, 2SK2414 100 120 140 160 - Case Temperature - °C c Pulsed Drain to Source Voltage - V 3 ...

Page 4

... Pulsed 100 100 GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE 2.0 Pulsed 1.5 1.0 0.5 0 100 –50 – 2SK2414, 2SK2414 125 °C/W th (ch-a) = 6.25 °C/W Single Pulse 100 1000 Pulsed Gate to Source Voltage - ...

Page 5

... V - Drain to Source Voltage - V DS REVERSE RECOVERY TIME vs. DRAIN CURRENT 100 50 di/ 0.1 1 Drain Current - A D 2SK2414, 2SK2414-Z SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 0.1 0 125 150 V - Source to Drain Voltage - V SD SWITCHING CHARACTERISTICS 1000 ...

Page 6

... SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD 100 1 100 Inductive Load - H 6 2SK2414, 2SK2414-Z SINGLE AVALANCHE ENERGY DERATING FACTOR 100 Starting T - Starting Channel Temperature - ° ...

Page 7

... Safe operating area of Power MOS FET. The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 2SK2414, 2SK2414-Z Document No. C11745E C11531E ...

Page 8

... The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. 2SK2414, 2SK2414-Z M4 96.5 ...

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