M5M51008DFP-70H MITSUBISHI, M5M51008DFP-70H Datasheet

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M5M51008DFP-70H

Manufacturer Part Number
M5M51008DFP-70H
Description
1048576-bit (131072-word by 8-bit) SMOS static RAM
Manufacturer
MITSUBISHI
Datasheet

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DESCRIPTION
FEATURES
APPLICATION
Small capacity memory units
The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static
RAM organized as 131072 word by 8-bit which are fabricated using
high-performance quadruple-polysilicon and double metal CMOS
technology. The use of thin film transistor (TFT) load cells and
CMOS periphery result in a high density and low power static
RAM.
for the battery back-up application.
outline package which is a high reliability and high density surface
mount device(SMD). Two types of devices are available.
M5M51008DVP(normal lead bend type package),
M5M51008DRV(reverse lead bend type package).Using both types
of devices, it becomes very easy to design a printed circuit board.
M5M51008DFP,VP,RV,KV-55H
M5M51008DFP,VP,RV,KV-70H
The M5M51008DVP,RV,KV are packaged in a 32-pin thin small
They are low standby current and low operation current and ideal
Directly TTL compatible : All inputs and outputs
Easy memory expansion and power down by S
Data hold on +2V power supply
Three-state outputs : OR - tie capability
OE prevents data contention in the I/O bus
Common data I/O
Package
M5M51008DFP
M5M51008DVP,RV ············ 32pin 8 X 20 mm
M5M51008DKV
Type name
············ 32pin 525mil
············ 32pin 8 X 13.4 mm
Access
(max)
time
55ns
70ns
(1MHz)
(1MHz)
Active
(max)
15mA
Power supply current
SOP
1
,S
2
2
2
TSOP
(Vcc=5.5V)
TSOP
stand-by
20µA
(max)
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
MITSUBISHI
ELECTRIC
M5M51008DFP,VP,RV,KV,KR -55H, -70H
PIN CONFIGURATION (TOP VIEW)
ADDRESS
OUTPUTS
A
A
A
A
A
A
A
NC
V
A
S
W
A
A
A
A
A
A
A
A
W
S
A
V
NC
A
A
A
A
A
A
A
INPUTS/
4
5
6
7
12
14
16
CC
15
2
13
8
9
11
INPUTS
11
9
8
13
2
15
CC
16
14
12
7
6
5
4
DATA
16
15
14
13
12
11
10
10
11
12
13
14
15
16
7
6
5
4
3
2
1
1
2
3
4
5
6
7
8
9
9
8
Outline 32P3H-E(VP), 32P3K-B(KV)
NC
A
DQ
DQ
DQ
GND
A
A
A
A
A
A
A
A
A
A
16
14
12
7
6
5
4
3
2
1
0
Outline 32P2M-A(FP)
1
2
3
Outline 32P3H-F(RV)
10
11
12
13
14
15
16
1
2
3
4
5
6
7
8
9
M5M51008DVP,KV
M5M51008DRV
MITSUBISHI LSIs
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
NC : NO CONNECTION
V
W
DQ
DQ
DQ
DQ
DQ
A
S
A
A
A
A
OE
A
S
CC
15
2
13
8
9
11
10
1
8
7
6
5
4
OUTPUT ENABLE
INPUT
ADDRESS
INPUT
CHIP SELECT
INPUT
WRITE CONTROL
INPUT
ADDRESS
INPUT
CHIP SELECT
INPUT
DATA
INPUTS/
OUTPUTS
ADDRESS
INPUTS
19
18
17
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
32
31
30
29
28
27
26
25
24
23
22
21
20
Ver. 1.1
OE
A
S
DQ
DQ
DQ
DQ
DQ
GND
DQ
DQ
DQ
A
A
A
A
A
A
A
A
DQ
DQ
DQ
GND
DQ
DQ
DQ
DQ
DQ
S
A
OE
10
1
0
1
2
3
3
2
1
0
1
10
8
7
6
5
4
3
2
1
1
2
3
4
5
6
7
8
1

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M5M51008DFP-70H Summary of contents

Page 1

... M5M51008DVP,RV ············ 32pin M5M51008DKV ············ 32pin 8 X 13.4 mm APPLICATION Small capacity memory units M5M51008DFP,VP,RV,KV,KR -55H, -70H 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM PIN CONFIGURATION (TOP VIEW) ADDRESS INPUTS ...

Page 2

... A10 Pin numbers inside dotted line show those of TSOP M5M51008DFP,VP,RV,KV,KR -55H, -70H 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM When setting and OE. a non-selectable mode in which both reading and writing are 1 2 disabled. In this mode, the output stage high- impedance ...

Page 3

... Symbol Input capacitance C I Output capacitance C O Note 1: Direction for current flowing into positive (no mark). 2: Typical value is Vcc = 5V 25°C M5M51008DFP,VP,RV,KV,KR -55H, -70H 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM Conditions With respect to GND Ta=25°C (Ta=0~70°C, Vcc=5V±10%, unless otherwise noted) Test conditions I = 1.0mA – ...

Page 4

... Output disable time from W low t Output disable time from OE high dis(OE) t en(W) Output enable time from W high t en(OE) Output enable time from OE low M5M51008DFP,VP,RV,KV,KR -55H, -70H 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM (Ta=0~70°C, 5V±10% unless otherwise noted ) =0.6V (-70H) =0.0V (-55H) (-55H) (for dis ,t ) ...

Page 5

... TIMING DIAGRAMS Read cycle "H" level Write cycle (W control mode 1~8 M5M51008DFP,VP,RV,KV,KR -55H, -70H 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM a( (S1) (Note (S2) (Note (OE (OE) (Note (S1 (S2 ...

Page 6

... Note 3: Hatching indicates the state is "don't care". 4: Writing is executed while S 5: When the falling edge simultaneously or prior to the falling edge rising edge Don't apply inverted phase signal externally when DQ pin is output mode. M5M51008DFP,VP,RV,KV,KR -55H, -70H 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM ...

Page 7

... POWER DOWN CHARACTERISTICS S control mode 2. Note 7: On the power down mode by controlling S S control mode 0.2V M5M51008DFP,VP,RV,KV,KR -55H, -70H 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM (Ta=0~70°C, unless otherwise noted) Test conditions 2.2V Vcc(PD) 2V Vcc(PD) 2.2V 4.5V Vcc(PD) Vcc(PD)<4. 0.2V, other inputs = 0~ –0.2V,S V – ...

Page 8

... All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product listed herein ...

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