KM44C4100CK-6 Samsung, KM44C4100CK-6 Datasheet
KM44C4100CK-6
Specifications of KM44C4100CK-6
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KM44C4100CK-6 Summary of contents
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... RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx4 Fast Page Mode DRAM family is fabricated using Samsung s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as main memory for high level computer, microcomputer and personal computer. ...
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KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C •KM44C/V40(1)00CK DQ0 2 DQ1 RAS 5 *A11(N.C) 6 A10 *A11 is N.C for KM44C/V4100C(5V/3.3V, 2K Ref. product) K ...
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KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative Voltage on V supply relative Storage Temperature Power Dissipation Short Circuit Output Current * Permanent device damage may occur if "ABSOLUTE ...
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KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C DC AND OPERATING CHARACTERISTICS Symbol Power I Don t care CC1 Normal I Don t care CC2 L I Don t care CC3 I Don t care CC4 Normal I Don t care CC5 L I ...
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KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C CAPACITANCE (T = Parameter Input capacitance [A0 ~ A11] Input capacitance [RAS, CAS, W, OE] Output capacitance [DQ0 - DQ3] AC CHARACTERISTICS ( Test condition (5V device =5.0V 10%, ...
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KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C AC CHARACTERISTICS (Continued) Parameter Data set-up time Data hold time Refresh period (2K, Normal) Refresh period (4K, Normal) Refresh period (L-ver) Write command set-up time CAS to W delay time RAS to W delay time Column ...
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KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C TEST MODE CYCLE Parameter Random read or write cycle time Read-modify-write cycle time Access time from RAS Access time from CAS Access time from column address RAS pulse width CAS pulse width RAS hold time CAS ...
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KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C NOTES 1. An initial pause of 200us is required after power-up followed by any 8 RAS-only refresh or CAS-before-RAS refresh cycles before proper device operation is achieved (min) and V (max) are reference levels ...
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KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C READ CYCLE RAS CRP CAS ASR ADDRESS ...
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KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP CAS ASR ADDRESS V ...
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KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS CRP CAS ASR ADDRESS ...
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KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C READ - MODIFY - WRTIE CYCLE RAS CRP CAS ASR ROW A ADDR ...
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KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C FAST PAGE READ CYCLE RAS CRP CAS ASR ROW A ADDR ...
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KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C FAST PAGE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP CAS ASR ROW ...
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KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C FAST PAGE READ - MODIFY - WRITE CYCLE RAS RCD CAS RAD t ASR t ASC ROW A ADDR ...
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KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C RAS - ONLY REFRESH CYCLE NOTE : W, OE Don t care OPEN OUT RAS CRP CAS ...
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KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C HIDDEN REFRESH CYCLE ( READ ) RAS CRP CAS ASR ADDRESS ...
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KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C HIDDEN REFRESH CYCLE ( WRITE ) NOTE : D = OPEN OUT RAS CRP CAS ASR ADDRESS V ...
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KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C CAS - BEFORE - RAS SELF REFRESH CYCLE NOTE : OE Don t care RAS CAS DQ0 ~ DQ3( ...
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KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C PACKAGE DIMENSION 26(24) SOJ 300mil #26(24) 0.0375 (0.95) 26(24) TSOP(II) 300mil 0.037 (0.95) 0.691 (17.55) MAX 0.670 (17.03) 0.680 (17.28) 0.050 (1.27) 0.026 (0.66) 0.032 (0.81) 0.015 (0.38) 0.021 (0.53) 0.691 (17.54) MAX 0.671 (17.04) 0.047 ...