TE28F640J3C-150

Manufacturer Part NumberTE28F640J3C-150
DescriptionTE28F640J3C-150Intel StrataFlash Memory (J3)
ManufacturerIntel Corporation
TE28F640J3C-150 datasheet
 
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DC Voltage Characteristics

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256-Mbit J3 (x8/x16)
Table 6.
DC Current Characteristics (Sheet 2 of 2)
VCCQ
VCC
Symbol
Parameter
V
Block Erase or Clear
CC
I
CCE
Block Lock-Bits Current
V
Program Suspend or
CC
I
CCWS
Block Erase Suspend
I
CCES
Current
NOTES:
1. All currents are in RMS unless otherwise noted. These currents are valid for all product versions (packages and
speeds). Contact Intel’s Application Support Hotline or your local sales office for information about typical
specifications.
2. Includes STS.
3. CMOS inputs are either V
± 0.2 V or GND ± 0.2 V. TTL inputs are either V
CC
4. Sampled, not 100% tested.
5. I
and I
are specified with the device selected. If the device is read or written while in erase suspend
CCWS
CCES
mode, the device’s current draw is I
6.2

DC Voltage Characteristics

Table 7.

DC Voltage Characteristics

Symbol
V
Input Low Voltage
IL
V
Input High Voltage
IH
V
Output Low Voltage
OL
V
Output High Voltage
OH
V
Lockout during Program,
PEN
V
PENLK
Erase and Lock-Bit Operations
20
2.7 - 3.6V
2.7 - 3.6V
Typ
Max
Unit
35
70
mA
CMOS Inputs, V
40
80
mA
TTL Inputs, V
10
mA
Device is enabled (see
and I
CCR
CCWS
Parameter
Min
Max
–0.5
0.8
V
CCQ
2.0
+ 0.5
0.4
0.2
0.85 ×
V
CCQ
V
CCQ
0.2
2.2
Test Conditions
= V
PEN
CC
= V
PEN
CC
Table
13)
or V
.
IL
IH
Unit
Test Conditions
Notes
V
V
V
= V
Min
CCQ
CCQ
V
I
= 2 mA
OL
V
= V
Min
CCQ
CCQ
V
I
= 100 µA
OL
V
= V
Min
CCQ
CCQ
V
I
= –2.5 mA
OH
V
= V
Min
CCQ
CCQ
V
I
= –100 µA
OH
V
2,3,4,7
Datasheet
Notes
1,4
1,5
2, 6
2,6
1,2
1,2