MRF183 Motorola, MRF183 Datasheet

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MRF183

Manufacturer Part Number
MRF183
Description
RF power field effect transistor
Manufacturer
Motorola
Datasheet

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power
Field Effect Transistors
N–Channel Enhancement–Mode Lateral
MOSFETs
cies to 1.0 GHz. The high gain and broadband performance of these devices
makes ithem ideal for large–signal, common source amplifier applications in 28
volt base station equipment.
REV 6
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
MOTOROLA RF DEVICE DATA
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1 Meg Ohm)
Gate–Source Voltage
Drain Current – Continuous
Total Device Dissipation @ T C = 70 C
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for broadband commercial and industrial applications at frequen-
Motorola, Inc. 1997
Guaranteed Performance at 945 MHz, 28 Volts
Characterized with Series Equivalent Large–Signal
Impedance Parameters
S–Parameter Characterization at High Bias Levels
Excellent Thermal Stability
100% Tested for Load Mismatch Stress at all Phase Angles
with 5:1 VSWR @ 28 Vdc, 945 MHz, 45 Watts CW
Derate above 70 C
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power – 45 Watts PEP
Power Gain – 11.5 dB
Efficiency – 33%
IMD – 28 dBc
Characteristic
Rating
G
D
S
Symbol
Symbol
V DGR
V DSS
R JC
V GS
T stg
P D
T J
I D
CASE 360B–01, STYLE 1
CASE 360C–03, STYLE 1
MRF183S
LATERAL N–CHANNEL
RF POWER MOSFETs
MRF183
– 65 to +200
45 W, 1.0 GHz
BROADBAND
Value
0.67
Max
(MRF183S)
200
1.5
(MRF183)
65
65
86
5
20
MRF183 MRF183S
Order this document
by MRF183/D
W/ C
Unit
Unit
Vdc
Vdc
Vdc
Adc
C/W
W
C
C
1

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MRF183 Summary of contents

Page 1

... CASE 360B–01, STYLE 1 G CASE 360C–03, STYLE 1 S Symbol V DSS V DGR stg – +200 T J Symbol R JC Order this document by MRF183/D (MRF183) (MRF183S) Value Unit 65 Vdc 65 Vdc 20 Vdc 5 Adc 200 C Max Unit 1.5 C/W MRF183 MRF183S 1 ...

Page 2

... Two–Tone Common Source Amplifier Power Gain Two–Tone Drain Efficiency 3rd Order Intermodulation Distortion Input Return Loss Output Mismatch Stress ( Vdc, P out = 45 Watts CW 250 mA 945 MHz, VSWR 5:1 at All Phase Angles) MRF183 MRF183S 2 Symbol Min Typ BV DSS 65 – ...

Page 3

... Chip Capacitor C9, C10 10 pF Chip Capacitor C15 100 pF Chip Capacitor C16 250 Electrolytic Capacitor L1 Turns, 24 AWG, ID 0.059 R1 120 , 1/4 W Carbon 1/4 W Carbon Figure 1. MRF183S Two Tone Test Circuit Schematic MOTOROLA RF DEVICE DATA DUT ...

Page 4

... DRAIN VOLTAGE (VOLTS) Figure 6. Output Power versus Drain Bias Supply Voltage MRF183 MRF183S 4 TYPICAL CHARACTERISTICS –20 – 25 3rd ORDER – 30 – 35 5th 150 mA – 40 – 45 7th 250 mA – 50 450 mA – ...

Page 5

... ORDER Vdc 1 945 MHz f2 = 945.1 MHz INPUT POWER (dBm Vdc GATE VOLTAGE (VOLTS) T CASE = CASE = 100 DRAIN VOLTAGE (VOLTS MRF183 MRF183S 5 ...

Page 6

... Figure 13. Broadband Power Performance of MRF183S GATE R1 BIAS FEEDTHRU C5 C6 Figure 14. MRF183S Two Tone Test Circuit Component Parts Layout MRF183 MRF183S 6 TYPICAL CHARACTERISTICS GAIN IMD VSWR 935 940 945 950 955 960 965 f, FREQUENCY (MHz ...

Page 7

... MHz 250 mA, P out = 45 W (PEP MHz Ohms Ohms 930 1.10 + j0.93 2.60 – j0.13 945 1.10 + j0.78 2.70 – j0.28 960 1.10 + j0.60 2.80 – j0. Conjugate of source impedance Conjugate of the load impedance at given output power, voltage and current conditions. MRF183 MRF183S 7 ...

Page 8

... MRF183 MRF183S 1 29.58 100 0.017 19.73 96 0.017 14.84 93 0.017 11.94 91 0.017 9.75 89 0.017 8.34 88 0.017 7. ...

Page 9

... MRF183 MRF183S 9 ...

Page 10

... Customer Focus Center: 1–800–521–6274 Mfax : RMFAX0@email.sps.mot.com – TOUCHTONE 1–602–244–6609 Motorola Fax Back System – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 – http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ MRF183 MRF183S 10 PACKAGE DIMENSIONS NOTES ...

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