MRF185

Manufacturer Part NumberMRF185
DescriptionRF power field effect transistor
ManufacturerMotorola
MRF185 datasheet
 


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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Advance Information
The RF MOSFET Line
RF POWER
Field-Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFET
High Gain, Rugged Device
Broadband Performance from HF to 1 GHz
Bottom Side Source Eliminates DC Isolators, Reducing Common
Mode Inductances
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Storage Temperature Range
Operating Junction Temperature
Total Device Dissipation @ T C = 25 C
Derate above 25 C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS
(T C = 25 C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
m
(V GS = 0 V, I D = 1
Adc)
Zero Gate Voltage Drain Current
(V DS = 28 V, V GS = 0 V)
Gate–Source Leakage Current
(V GS = 20 V, V DS = 0 V)
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
LATERAL N–CHANNEL
RF POWER MOSFET
D
G
S
(FLANGE)
G
D
CASE 375B–02, STYLE 2
Symbol
V DSS
V GS
T stg
T J
P D
Symbol
R JC
Symbol
Min
Typ
V (BR)DSS
65
I DSS
I GSS
Order this document
by MRF185/D
MRF185
85 WATTS, 1.0 GHz
28 VOLTS
BROADBAND
Value
Unit
65
Vdc
20
Vdc
– 65 to +150
C
200
C
250
Watts
1.45
W/ C
Max
Unit
0.7
C/W
Max
Unit
Vdc
1
Adc
1
Adc
MRF185
1