MRF186 Motorola, MRF186 Datasheet

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MRF186

Manufacturer Part Number
MRF186
Description
MRF186The RF MOSFET Line RF POWER FIELD-EFFECT TRANSISTOR Channel Enhancement?Mode Lateral MOSFET
Manufacturer
Motorola
Datasheet
查询MRF186供应商
查询MRF186供应商
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field-Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFET
cies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this
device make it ideal for large–signal, common source amplifier applications in 28
volt base station equipment.
• Guaranteed Performance @ 960 MHz, 28 Volts
• Excellent Thermal Stability
• 100% Tested for Load Mismatch Stress at all Phase Angles with
REV 5
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Motorola, Inc. 2002
MOTOROLA RF DEVICE DATA
Drain–Source Voltage
Drain–Gate Voltage (R
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for broadband commercial and industrial applications with frequen-
5:1 VSWR @ 28 Vdc, 960 MHz, 120 Watts CW
Derate above 70°C
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 120 Watts PEP
Power Gain — 11 dB
Efficiency — 30%
Intermodulation Distortion — –28 dBc
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
GS
(2)
= 1 MΩ)
C
= 70°C
Characteristic
(2)
Rating
Symbol
Symbol
V
V
R
V
T
DGR
P
DSS
T
I
θJC
GS
stg
D
D
J
LATERAL N–CHANNEL
CASE 375B–04, STYLE 1
RF POWER MOSFET
1.0 GHz, 120 W, 28 V
MRF186
– 65 to +150
BROADBAND
Value
162.5
1.25
Max
±20
200
0.8
65
65
14
NI–860
Order this document
by MRF186/D
MRF186
Archived 2005
Watts
W/°C
°C/W
Unit
Unit
Vdc
Vdc
Vdc
Adc
°C
°C
1

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MRF186 Summary of contents

Page 1

... NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 5 MOTOROLA RF DEVICE DATA  Motorola, Inc. 2002 Order this document by MRF186/D MRF186 1.0 GHz, 120 LATERAL N–CHANNEL BROADBAND RF POWER MOSFET CASE 375B–04, STYLE 1 NI– ...

Page 2

... MHz) Output Mismatch Stress ( Vdc 120 W CW 400 mA, DD out 960 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) (1) Each side of device measured separately. (2) Device measured in push–pull configuration. MRF186 2 = 25°C unless otherwise noted) Symbol V (BR)DSS I DSS I GSS V GS(th) ...

Page 3

... Type N Connectors R1 kΩ, 1/4 W, Carbon Resistor R2, R5 1.2 kΩ, 0.1 W, Chip Resistor 75 Ω, 0.1 W, Chip Resistor R3 – Z22 Microstrip (See Component Placement) Balun1, Balun2, 2.20″ 50 Ω, 0.086″ OD Semi–Rigid Coax Coax1, Coax2  , ε Board 1/32″ Glass Teflon = 2.55 r MRF186 3 Archived 2005 ...

Page 4

... ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Figure 2. Intermodulation Distortion Products versus Output Power Figure 4. Power Gain versus Output Power Figure 6. Output Power versus Supply Voltage MRF186 4 TYPICAL CHARACTERISTICS Figure 3. Intermodulation Distortion versus Output Power Figure 5. Output Power versus Input Power Figure 7. Output Power versus Gate Voltage ...

Page 5

... ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Figure 8. Drain Current versus Gate Voltage ° ° Figure 10. DC Safe Operating Area MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS Figure 9. Capacitance versus Voltage Figure 11. Broadband Circuit Performance MRF186 5 Archived 2005 ...

Page 6

... Conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current, efficiency and frequency. * was chosen based on tradeoffs between gain, output OL power, drain efficiency and intermodulation performance. Impedances shown represent a single channel (1/2 of MRF186) impedance measurement. Ω MOTOROLA RF DEVICE DATA Archived 2005 ...

Page 7

... ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MRF186 Figure 13. Component Placement Diagram of 930 – 960 MHz Broadband Test Fixture MOTOROLA RF DEVICE DATA MRF186 7 Archived 2005 ...

Page 8

... HOME PAGE: http://www.motorola.com/semiconductors/ MRF186 ◊ 8 PACKAGE DIMENSIONS (FLANGE (LID (INSULATOR) CASE 375B–04 ISSUE E NI–860 INCHES MILLIMETERS DIM MIN MAX MIN MAX bbb ccc MOTOROLA RF DEVICE DATA MRF186/D Archived 2005 ...

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