MRF186

Manufacturer Part NumberMRF186
DescriptionMRF186The RF MOSFET Line RF POWER FIELD-EFFECT TRANSISTOR Channel Enhancement?Mode Lateral MOSFET
ManufacturerMotorola
MRF186 datasheet
 


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ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
MOTOROLA
查询MRF186供应商
查询MRF186供应商
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field-Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
cies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this
device make it ideal for large–signal, common source amplifier applications in 28
volt base station equipment.
• Guaranteed Performance @ 960 MHz, 28 Volts
Output Power — 120 Watts PEP
Power Gain — 11 dB
Efficiency — 30%
Intermodulation Distortion — –28 dBc
• Excellent Thermal Stability
• 100% Tested for Load Mismatch Stress at all Phase Angles with
5:1 VSWR @ 28 Vdc, 960 MHz, 120 Watts CW
MAXIMUM RATINGS
(2)
Rating
Drain–Source Voltage
Drain–Gate Voltage (R
= 1 MΩ)
GS
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T
= 70°C
C
Derate above 70°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
(2)
Characteristic
Thermal Resistance, Junction to Case
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 5
MOTOROLA RF DEVICE DATA
Motorola, Inc. 2002
Order this document
by MRF186/D
MRF186
1.0 GHz, 120 W, 28 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 375B–04, STYLE 1
NI–860
Symbol
Value
Unit
V
65
Vdc
DSS
V
65
Vdc
DGR
±20
V
Vdc
GS
I
14
Adc
D
P
162.5
Watts
D
1.25
W/°C
°C
T
– 65 to +150
stg
°C
T
200
J
Symbol
Max
Unit
°C/W
R
0.8
θJC
MRF186
Archived 2005
1

MRF186 Summary of contents