HYB3164400T-60 Infineon Technologies AG, HYB3164400T-60 Datasheet
HYB3164400T-60
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HYB3164400T-60 Summary of contents
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Dynamic RAM (4k & 8k Refresh) Preliminary Information 16 777 216 words by 4-bit organization • ˚C operating temperature • Fast access and cycle time • RAS access time (-50 version) 60 ...
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This device MBit dynamic RAM organized 16 777 216 by 4 bits. The device is fabricated in SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process technology. The circuit and process design allow this device to ...
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Pin Configuration Semiconductor Group HYB 3164(5)400J/T-50/-60 P-SOJ-34-1 (500 mil) P-TSOPII-34-1 (500 mil) 63 16M x 4-DRAM ...
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TRUTH TABLE FUNCTION Standby Read Early-Write Delayed-Write Read-Modify-Write Fast Page Mode Read 1st Cycle 2nd Cycle Fast Page Mode Early 1st Cycle Write 2nd Cycle Fast Page Mode RMW 1st Cycle 2st Cycle RAS only refresh CAS-before-RAS refresh Test Mode ...
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Block Diagram for HYB 3164400J/T Semiconductor Group HYB 3164(5)400J/T-50/-60 65 16M x 4-DRAM ...
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Block Diagram for HYB 3165400J/T Semiconductor Group HYB 3164(5)400J/T-50/-60 66 16M x 4-DRAM ...
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Absolute Maximum Ratings Operating temperature range.............................................................................................. ˚C Storage temperature range.........................................................................................– 150 ˚C Input/output voltage..................................................................................-0.5 to min (Vcc+0.5,4.6) V Power supply voltage....................................................................................................-0.5V to 4.6 V Power dissipation......................................................................................................................1.0 W Data out current (short circuit)..................................................................................................50 mA Note Stresses above ...
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DC Characteristics (cont’ ˚ Parameter Average Vcc supply current, during RAS-only refresh cycles: (RAS cycling: CAS = VIH: tRC = tRC min.) Average Vcc supply current, during fast ...
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AC Characteristics (note: 6,7, ˚C, = 3.3 0 Parameter common parameters Random read or write cycle time RAS precharge time RAS pulse width CAS pulse width Row address setup time Row ...
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AC Characteristics (cont’ ˚C, = 3.3 0 Parameter CAS to output in low-Z Output buffer turn-off delay Output buffer turn-off delay from OE Data to OE low delay CAS high to ...
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AC Characteristics (cont’ ˚C, = 3.3 0 Parameter CAS precharge to RAS Delay Fast Page Mode Read-Modify-Write Cycle Fast page mode read-write cycle time CAS precharge to WE CAS-before-RAS refresh cycle ...
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Notes: 1) All voltages are referenced to VSS. 2) ICC1, ICC3, ICC4 and ICC6 and ICC7 depend on cycle rate. 3) ICC1 and ICC4 depend on output loading. Specified values are measured with the output open. 4) Address can be ...
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V IH RAS CAS ASR V IH Row Address Address WRITE I/O1-I/O4 (Inputs I/O1-I/O4 (Outputs) V ...
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V IH RAS CAS ASR V IH Row Address Address WRITE I/O1-I/O4 (Inputs I/O1-I/O4 OH (Outputs) V ...
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V IH RAS CAS ASR V IH Row Address Address WRITE I/O1-I/O4 (Inputs I/O1-I/O4 (Outputs) V ...
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V IH RAS CAS t ASR V IH Address Row Address WRITE I/O1-I/O4 (Inputs I/O1-I/O4 (Outputs) V ...
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Fast Page Mode Read-Modify-Write Cycle Semiconductor Group HYB 3164(5)400J/T-50/-60 77 16M x 4-DRAM ...
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V IH RAS CAS RAH t ASR V IH Row Address Addr RAD t RCS V IH WRITE I/O1-I/O4 IH (Inputs) V ...
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V IH RAS CAS RAH t ASR V IH Row Address Addr RAD V IH WRITE I/O1-I/O4 (Inputs ...
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V IH RAS CAS ASR V IH Address I/O1-I/O4 (Outputs “H” or “L” RAS-Only Refresh Cycle Semiconductor Group t RAS t RAH Row Address HI-Z 80 HYB ...
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V IH RAS RPC CAS WRITE OEZ CDD V IH I/O1-I/O4 (Inputs ODD V OH I/O1-I/O4 ...
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V IH RAS CAS RAD t RAH t ASR V IH Row Address Addr WRITE I/O1-I/O4 (Inputs ...
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V IH RAS CAS RAH t ASR V IH Row Address Addr WRITE I/O1-I/O4 (Inputs ...
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V IH RAS CAS Address V IL Read Cycle V IH WRITE I/O1-I/O4 IH (Inputs I/O1-I/O4 OH (Outputs Write ...
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V IH RAS CAS Adress WRITE ODD V I/O1-I/O4 IH (Inputs CDD t OEZ V OH I/O1-I/O4 ...
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V IH RAS RPC CAS WRITE OEZ CDD V IH I/O1-I/O4 (Inputs ODD V OH I/O1-I/O4 ...
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Package Outline P-SOJ-34-1 (500 mil) (Plastic Small Outline J-leaded Package) Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. SMD = Surface Mounted Device Semiconductor Group HYB 3164(5)400J/T-50/-60 87 16M x 4-DRAM ...
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P-TSOPII-34-1 (500 mil) (Plastic Thin Small Outline Package Type II Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. SMD = Surface Mounted Device Semiconductor Group HYB 3164(5)400J/T-50/-60 88 16M x 4-DRAM ...