HYB514265BJ-45 Infineon Technologies AG, HYB514265BJ-45 Datasheet
HYB514265BJ-45
Related parts for HYB514265BJ-45
HYB514265BJ-45 Summary of contents
Page 1
EDO-Dynamic RAM Preliminary Information 262 144 words by 16-bit organization • operating temperature • EDO - Hyper Page Mode • Performance: • -400 -40 - ...
Page 2
Ordering Information Type Ordering Code 5 V versions: HYB 514265BJ-400 Q67100-3033 P-SOJ-40-3 HYB 514265BJ-40 Q67100-3039 P-SOJ-40-3 HYB 514265BJ-45 Q67100-3035 P-SOJ-40-3 HYB 514265BJ-50 Q67100-3036 P-SOJ-40-3 3.3 V versions: HYB 314265BJ-45 on request HYB 314265BJ-50 on request HYB 314265BJL-45 on request HYB ...
Page 3
Pin Configuration (top view) Semiconductor Group HYB 5(3)14265BJ(L)-400/-40/-45/-50 256K x 16 EDO-DRAM P-SOJ-40-3 3 ...
Page 4
Block Diagram Semiconductor Group HYB 5(3)14265BJ(L)-400/-40/-45/-50 256K x 16 EDO-DRAM 4 ...
Page 5
Absolute Maximum Ratings Operating temperature range ........................................................................................ Storage temperature range..................................................................................... – 150 C Input/output voltage for HYB 514265................................................ – 0.5 to min. ( Power supply voltage for HYB 514265 ........................................................................... – 1 ...
Page 6
Parameter V Average supply current during CC hyper page mode (EDO) operation: -400 version Standby V supply current CC (RAS = LCAS = UCAS = Standby supply current (L-version only) CC (RAS = LCAS = UCAS ...
Page 7
Parameter V Average supply current during CC RAS-only refresh cycles: Average V supply current during hyper page CC mode (EDO) operation: V Standby supply current CC (RAS = LCAS = UCAS = Standby V supply current (L-version ...
Page 8
AC Characteristics Parameter Common Parameters Random read or write cycle time RAS precharge time RAS pulse width CAS pulse width CAS precharge time Row address setup ...
Page 9
Parameter Output buffer turn-off delay from OE Data to OE low delay CAS high to data delay OE high to data delay Data to CAS low delay Write Cycle Write command hold time Write command pulse width Write command setup ...
Page 10
Parameter Hyper Page Mode (EDO) Read-Modify-Write Cycle Hyper page mode read/write cycle time CAS precharge to WE delay time CAS before RAS Refresh Cycle CAS setup time CAS hold time RAS to CAS precharge time Write to RAS precharge time ...
Page 11
AC Characteristics ˚ Parameter Common Parameters Random read or write cycle time RAS precharge time RAS pulse width CAS pulse width CAS precharge time Row address setup time ...
Page 12
AC Characteristics (cont’ ˚ Parameter Output buffer turn-off delay Output turn-off delay from OE Data to CAS low delay Data to OE low delay CAS high to data delay ...
Page 13
AC Characteristics (cont’ ˚ Parameter Hyper Page Mode (EDO) Read-modify-Write Cycle Hyper page mode (EDO) read-write cycle time CAS precharge to WE CAS-before-RAS Refresh Cycle CAS setup time CAS ...
Page 14
and are reference levels for measuring timing of input signals. Transition times are also (min (max measured between and IH 8) Measured with the specified current load and ...
Page 15
Read Cycle Semiconductor Group HYB 5(3)14265BJ(L)-400/-40/-45/-50 256K x 16 EDO-DRAM 15 ...
Page 16
Write Cycle (Early Write) Semiconductor Group HYB 5(3)14265BJ(L)-400/-40/-45/-50 256K x 16 EDO-DRAM 16 ...
Page 17
Write Cycle (OE Controlled Write) Semiconductor Group HYB 5(3)14265BJ(L)-400/-40/-45/-50 256K x 16 EDO-DRAM 17 ...
Page 18
Read-Write (Read-Modify-Write) Cycle Semiconductor Group HYB 5(3)14265BJ(L)-400/-40/-45/-50 256K x 16 EDO-DRAM 18 ...
Page 19
Hyper Page Mode (EDO) Read Cycle Semiconductor Group HYB 5(3)14265BJ(L)-400/-40/-45/-50 256K x 16 EDO-DRAM 19 ...
Page 20
Hyper Page Mode (EDO) Early Write Cycle Semiconductor Group HYB 5(3)14265BJ(L)-400/-40/-45/-50 256K x 16 EDO-DRAM 20 ...
Page 21
Hyper Page Mode (EDO) Late Write and Read-Modify-Write Cycles Semiconductor Group HYB 5(3)14265BJ(L)-400/-40/-45/-50 256K x 16 EDO-DRAM 21 ...
Page 22
RAS-Only Refresh Cycle Semiconductor Group HYB 5(3)14265BJ(L)-400/-40/-45/-50 256K x 16 EDO-DRAM 22 ...
Page 23
CAS-Before-RAS Refresh Cycle Semiconductor Group HYB 5(3)14265BJ(L)-400/-40/-45/-50 256K x 16 EDO-DRAM 23 ...
Page 24
CAS before RAS Self Refresh Cycle Semiconductor Group HYB 5(3)14265BJ(L)-400/-40/-45/-50 256K x 16 EDO-DRAM 24 ...
Page 25
Hidden Refresh Cycle (Read) Semiconductor Group HYB 5(3)14265BJ(L)-400/-40/-45/-50 256K x 16 EDO-DRAM 25 ...
Page 26
Hidden Refresh Cycle (Early Write) Semiconductor Group HYB 5(3)14265BJ(L)-400/-40/-45/-50 256K x 16 EDO-DRAM 26 ...
Page 27
CAS-Before-RAS Refresh Counter Test Cycle Semiconductor Group HYB 5(3)14265BJ(L)-400/-40/-45/-50 256K x 16 EDO-DRAM 27 ...
Page 28
Package Outlines P-SOJ-40-3 (Small Outline J-Leaded Package) Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. SMD = Surface Mounted Device Semiconductor Group HYB 5(3)14265BJ(L)-400/-40/-45/-50 256K x 16 EDO-DRAM 28 Dimensions in ...