HYB3117805BSJ-60 Infineon Technologies AG, HYB3117805BSJ-60 Datasheet

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HYB3117805BSJ-60

Manufacturer Part Number
HYB3117805BSJ-60
Description
2M x 8bit EDO-DRAM
Manufacturer
Infineon Technologies AG
Datasheet
• 2 097 152 words by 8-bit organization
• 0 to 70 C operating temperature
• Hyper Page Mode-EDO-operation
• Performance:
• Power dissipation:
• Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh
• All inputs, outputs and clocks fully TTL (5 V versions) and LV-TTL (3.3 V version)-compatible
• 2048 refresh cycles / 32 ms (2k-refresh)
• Plastic Package: P-SOJ-28-3 400 mil
2M
2k Refresh
(Hyper Page Mode-EDO)
Advanced Information
Semiconductor Group
t
t
t
t
t
Power Supply
Active
TTL Standby
CMOS Standby
and test mode
RAC
CAC
AA
RC
HPC
8-Bit Dynamic RAM
RAS access time
CAS access time
Access time from address
Read/Write cycle time
Hyper page mode (EDO) cycle time
440
-50
HYB 5117805
5
5.5
11
10%
385
-60
1
-50
50
13
25
84
20
288
-50
HYB 3117805
104
-60
60
15
30
25
3.3
7.2
3.6
HYB 5117805/BSJ-50/-60
HYB 3117805/BSJ-50/-60
ns
ns
ns
ns
ns
0.3 V
252
-60
mW
mW
mW
1998-10-01

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HYB3117805BSJ-60 Summary of contents

Page 1

Dynamic RAM 2k Refresh (Hyper Page Mode-EDO) Advanced Information • 2 097 152 words by 8-bit organization • operating temperature • Hyper Page Mode-EDO-operation • Performance: t RAS access time RAC t CAS access ...

Page 2

The HYB 5(3)117805 are 16 MBit dynamic RAMs based on the die revisions “G” & “F” and organized as 2 097 152 words by 8-bits. The HYB 5(3)117805 utilizes a submicron CMOS silicon gate process technology, as well as advanced ...

Page 3

WE CAS No.2 Clock Generator Column 10 Address Buffers (10 Refresh A3 Controller Refresh A7 Counter (11 A10 Row 11 Address Buffers (11) No.1 Clock RAS Generator Block Diagram Semiconductor ...

Page 4

Absolute Maximum Ratings Operating temperature range ........................................................................................... Storage temperature range....................................................................................... – 150 C Input/output voltage (5 V versions) .................................................... – 0.5 to min ( Input/output voltage (3.3 V versions) ................................................. – 0.5 to min ...

Page 5

DC Characteristics (cont’ Parameter Average V supply current CC (RAS, CAS, address cycling: Standby V supply current (RAS = CAS = CC V Average supply current, ...

Page 6

AC Characteristics Parameter Common Parameters Random read or write cycle time RAS precharge time RAS pulse width CAS pulse width Row address setup ...

Page 7

AC Characteristics (cont’ Parameter Data to CAS low delay Data to OE low delay CAS high to data delay OE high to data delay Write ...

Page 8

AC Characteristics (cont’ Parameter Hyper Page Mode (EDO) Read-Modify-Write Cycle Hyper page mode (EDO) read-write cycle time CAS precharge to WE CAS-before-RAS Refresh Cycle CAS ...

Page 9

Notes 1. All voltages are referenced and depend on cycle rate. CC1 CC3 CC4 CC6 and depend on output loading. Specified values are obtained with the output open. CC1 ...

Page 10

V IH RAS CAS ASR V IH Address Row I/O (Inputs I/O (Outputs ...

Page 11

V IH RAS CAS ASR V IH Address Row RAH I/O (Inputs I/O (Outputs) ...

Page 12

V IH RAS CAS ASR V IH Address Row RAH I/O (Inputs I/O (Outputs) ...

Page 13

V IH RAS CAS ASR V IH Address Row I/O (Inputs I/O (Outputs) V ...

Page 14

RCD V IH RAS CRP V IH CAS RAH t ASR V IH Address Row RAD I/O (Output) ...

Page 15

V IH RAS CRP V IH CAS RAH t ASR V IH Row Address Address RAD t WCS ...

Page 16

V IH RAS CSH t RCD V IH CAS RAD t t RAH t t ASR ASC V IH Address Row Column RWD t RCS ...

Page 17

V IH RAS CAS ASR V IH Address I/O (Outputs "H" or "L" RAS-only Refresh Cycle Semiconductor Group RAS t RAH Row Hi Z ...

Page 18

RAS RPC CAS ODD V IH I/O (Inputs CDD t OEZ V OH ...

Page 19

V IH RAS CAS RAD t ASC t RAH t ASR V IH Address Row RCS DZC V IH ...

Page 20

V IH RAS RCD V IH CAS RAD t ASC t RAH t ASR V IH Address Row WCS I/O (Input ...

Page 21

Read Cycle V IH RAS CSR V IH CAS Address WRP I/O (Inputs I/O ...

Page 22

V IH RAS RPC CAS Address ODD I/O (Inputs OEZ ...

Page 23

Package Outlines Plastic Package P-SOJ-28-3 (400mil) (SMD) (Plastic small outline J-leaded) Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. SMD = Surface Mounted Device Semiconductor Group HYB 5(3)117805/BSJ-50/- ...

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