HYB3165165ATL-50 Infineon Technologies AG, HYB3165165ATL-50 Datasheet
HYB3165165ATL-50
Related parts for HYB3165165ATL-50
HYB3165165ATL-50 Summary of contents
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Dynamic RAM (8k, 4k & 2k Refresh, EDO-Version) Advanced Information 4 194 304 words by 16-bit organization • °C operating temperature • Hyper Page Mode - EDO - operation • Performance: • t RAS ...
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This device MBit dynamic RAM organized 4 194 304 x 16 bits. The device is fabricated on an advanced first generation 64Mbit 0,35 m CMOS silicon gate process technology. The circuit and process design allow this device ...
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Pin Configuration VCC I/O1 I/O2 I/O3 I/O4 VCC I/O5 I/O6 I/O7 I/O8 N.C. VCC WE RAS N.C. N.C. N.C. N. VCC * Pin 33 is A12 for HYB 3164165AT(L) and N.C. for HYB 3165(6)165AT(L) ...
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TRUTH TABLE FUNCTION RAS LCAS UCAS WE H Standby Read:Word L Read:Lower Byte L Read:Upper Byte L Write:Word L (Early-Write) L Write:Lower Byte (Early-Write) Write:Upper Byte L (Early Write) Read-Modify- L Write Hyper Page Mode 1st L Read (Word) Cycle ...
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WE . UCAS . LCAS No. 2 Clock Generator Column 9 Address Buffer( Refresh Controller Refresh Counter (13 A10 A11 Row A12 13 Address Buffers(13) No. 1 Clock RAS Generator ...
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WE . UCAS . LCAS No. 2 Clock Generator Column 10 Address Buffer(10 Refresh Controller Refresh Counter (12 A10 A11 Row 12 Address Buffers(12) No. 1 Clock RAS Generator Block ...
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WE . UCAS . LCAS No. 2 Clock Generator Column 11 Address Buffer(11 Refresh Controller Refresh Counter (11 A10 Row 11 Address Buffers(11) No. 1 Clock RAS Generator Block Diagram ...
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Absolute Maximum Ratings Operating temperature range.............................................................................................. °C Storage temperature range.........................................................................................– 150 °C Input/output voltage..................................................................................-0.5 to min (Vcc+0.5,4.6) V Power supply voltage....................................................................................................-0.5V to 4.6 V Power dissipation......................................................................................................................1.3 W Data out current (short circuit)..................................................................................................50 mA Note Stresses above ...
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DC-Characteristics (cont’ ° Parameter Operating Current - (RAS, CAS, address cycling: tRC = tRC min.) Standby Current ( = RAS CAS RAS Only Refresh Current: - (RAS cycling: ...
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AC Characteristics ° Parameter Common Parameters Random read or write cycle time RAS pulse width CAS pulse width RAS precharge time CAS precharge time Row address setup time ...
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AC Characteristics (cont’ ° Parameter Read command hold time referenced to RAS CAS to output in low-Z Output buffer turn-off delay Output buffer turn-off delay from OE t Data ...
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AC Characteristics (cont’ ° Parameter RAS pulse width in hyper page mode t CAS precharge to RAS Delay OE pulse width OE hold time from CAS high Output buffer ...
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Notes: 1) All voltages are referenced to VSS. Vih may overshoot to Vcc + 2.0 V for pulse widths of < 4ns with 3.3V. Vil may undershoot to -2.0V for pulse width < 4.0 ns with 3.3V. Pulse width measured ...
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V IH RAS UCAS IH LCAS ASR V AAAA AAA AAAA AAA IH AAAA AAA Row AAAA AAA Address AAAA AAA AAAA AAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA ...
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V IH RAS V IL UCAS V IH LCAS ASR V AAAA AAA AAAA AAA IH AAAA AAA Row AAAA AAA Address AAAA AAA AAAA AAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA ...
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V IH RAS V IL UCAS V IH LCAS ASR V AAAA AAAA A AAAA AAAA AAAA AAAA AAAA AAAA A A Row Address AAAA AAAA AAAA AAAA AAAA AAAA A ...
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V IH RAS UCAS IH LCAS ASR V AAA A IH AAA A Address AAA A A Row AAA AAA AAA V AAA AAAA AAAA AAAA AAA AAAA AAAA AAAA ...
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V IH RAS CRP V UCAS IH LCAS RAH t ASR V AAAA A IH AAAA A AAAA A A Address AAAA Row AAAA AAAA t RAD AAAA AAAA AAAA ...
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V IH RAS CRP V IH UCAS V IL LCAS t RAH t ASR V AAAA AAAA AAAA A A Address AAAA Row AAAA AAAA t RAD AAAA AAAA AAAA ...
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V IH RAS CRP V IH UCAS V IL LCAS t RAH t ASR V AAAA A AAAA A IH AAAA A Address AAAA A A Row AAAA AAAA AAAA t RAD AAAA ...
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V IH RAS CRP V IH UCAS V IL LCAS t RAH t ASR V AAAA A IH AAAA A Row Address AAAA A A AAAA AAAA A A Addr V IL AAAA t t WCS AAAA ...
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V IH RAS CRP V IH UCAS V IL LCAS t RAH t ASR V AAAA AAAA AAAA A A Address AAAA Row AAAA AAAA t RAD AAAA AAAA AAAA ...
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Hyper Page Mode (EDO) Read-Modify-Write Cycle Semiconductor Group HYB3164(5/6)165AT(L)-40/-50/-60 AAAA AA AAAA AA AAAA AA AAAA AA AA AAAA AAAA AA AAAA AA AAAA AA AA AAAA AAAA AA AAAA AA AA AAAA AAAA AA AAAA A AAAA AA AAAA ...
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V IH RAS UCAS IH LCAS ASR V AAAA AAAA AAAA IH AAAA AAAA AAAA AAAA AAAA AAAA Address AAAA AAAA AAAA AAAA AAAA AAAA V IL AAAA AAAA AAAA V OH I/O (Outputs) ...
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V IH RAS RPC UCAS V IL LCAS V AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA IH AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA WE AAAA AAAA AAAA AAAA AAAA AAAA ...
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V IH RAS UCAS LCAS RAD t RAH t ASR V AAAA AAA AAAA IH AAAA AAA AAAA AAAA AAA AAAA Address AAAA AAA AAAA Row AAAA AAA AAAA V IL AAAA AAA ...
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V IH RAS UCAS V IL LCAS t RAH t ASR V AAAA AAA IH AAAA AAA AAAA AAA Address AAAA AAA Row AAAA AAA V IL AAAA AAA V AAAA AAAA AAAA AAAA AAAA AAAA ...
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V IH RAS RPC UCAS V IL LCAS V AAAA AAAA AAAA AAAA AAAA AAAA IH AAAA AAAA AAAA WE AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA ...
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Package Outlines Plastic Package P-TSOPII-50 (400 mil) (Thin Small Outline, SMD) Semiconductor Group HYB3164(5/6)165AT(L)-40/-50/- EDO-DRAM 29 ...