HYB514256B-70 Infineon Technologies AG, HYB514256B-70 Datasheet
HYB514256B-70
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HYB514256B-70 Summary of contents
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K 4-Bit Dynamic RAM Low Power 256 K 4-Bit Dynamic RAM Advanced Information 262 144 words by 4-bit organization • Fast access and cycle time • access time 95 ns cycle time (-50 version access ...
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The HYB 514256B/BJ/BL/BJL is the new generation dynamic RAM organized as 262 144 words by 4-bit. The HYB 514256B/BJ/BL/BJL utilizes CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and for ...
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Pin Configuration (top view) P-SOJ-26/20-1 Semiconductor Group HYB 514256B/BL/BJ/BJL-50/-60/-70 P-DIP-20-2 57 256 K 4-DRAM ...
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Block Diagram Semiconductor Group HYB 514256B/BL/BJ/BJL-50/-60/-70 58 256 K 4-DRAM ...
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Absolute Maximum Ratings Operating temperature range ......................................................................................... ˚C Storage temperature range......................................................................................– 150 ˚C Soldering temperature ............................................................................................................260 ˚C Soldering time .............................................................................................................................10 s Input/output voltage ........................................................................................................ – Power supply voltage...................................................................................................... – ...
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DC Characteristics (cont’ ˚ Parameter V Average supply current, fast page mode: CC -60 version -70 version -50 version V (RAS = , CAS, address cycling: IL ...
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AC Characteristics 4) 13 ˚ Parameter Random read or write cycle time Read-modify-write cycle time Fast page mode cycle time Fast page mode read-modify- write cycle time ...
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AC Characteristics (cont’ ˚ Parameter Row address setup time Row address hold time Column address setup time Column address hold time Column address to RAS lead time ...
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AC Characteristics (cont’ ˚ Parameter CAS precharge time (CAS- before-RAS counter test cycle) OE access time RAS hold time referenced to OE Output buffer turn-off delay time ...
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Notes : 1) All voltages are referenced and I CC1 CC3 CC4 CC6 CC7 3) I and I depend on output loading. Specified values are measured with the output open. ...
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Waveforms V IH RAS CAS ASR V IH Row Address I/O1-I/O4 (Inputs ...
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V IH RAS CAS ASR V IH Row Address I/O1-I/O4 (Inputs I/O1-I/O4 ...
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V IH RAS CAS ASR V IH Row Address RAH I/O1-I/O4 (Inputs ...
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V IH RAS CAS RAH ASR V IH Row Address I/O1-I/O4 (Inputs ...
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Fast Page Mode Read-Modify-Write Cycle Semiconductor Group HYB 514256B/BL/BJ/BJL-50/-60/-70 69 256 K 4-DRAM ...
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V IH RAS CAS RAH t t ASR V IH Row A0-A8 Addr RAD t RCS I/O1-I/O4 IH ...
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V IH RAS RCD V IH CAS RAH t ASR V IH Row A0-A8 Addr RAD I/O1-I/O4 (Inputs) V ...
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V IH RAS CAS ASR V IH A0- I/O1-I/O4 (Outputs “H” or “L” RAS-Only Refresh Cycle Semiconductor Group HYB 514256B/BL/BJ/BJL-50/-60/-70 t RAS t RAH Row Address HI-Z ...
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RAS RPC CAS OEZ CDD V IH I/O1-I/O4 (Inputs ODD V OH ...
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V IH RAS CAS RAD t RAH t ASR V IH Row A0-A8 Addr RCS I/O1-I/O4 (Inputs) V ...
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V IH RAS CAS RAD t RAH t ASR V IH Row A0-A8 Addr I/O1-I/O4 (Inputs ...
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V IH RAS CSR V IH CAS A0- Read Cycle I/O1-I/O4 IH (Inputs I/O1-I/O4 OH (Outputs) ...