MRF5812R1 Microsemi Corporation, MRF5812R1 Datasheet
MRF5812R1
Available stocks
Related parts for MRF5812R1
MRF5812R1 Summary of contents
Page 1
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Low Noise - 2 500 MHZ Associated Gain = 15 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective SO-8 package DESCRIPTION: Designed for high current, ...
Page 2
ELECTRICAL SPECIFICATIONS (Tcase = 25 C) STATIC (off) Symbol BVCEO Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc BVCBO Collector-Base Breakdown Voltage (IC = 1.0 mAdc BVEBO Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC ...
Page 3
FUNCTIONAL Symbol Minimum Noise Figure NFmin ( mAdc, VCE = 10 Vdc 500 MHz) G Power Gain @ Nfmin NF ( mAdc, VCE = 10 Vdc 500 MHz) G Maximum Unilateral Gain ...
Page 4
RF Low Power PA, LNA, and General Purpose Discrete Selector Guide RF Low Power PA, LNA, and General Purpose Discrete Selector Guide SO-8 MRF4427, R2 NPN 175 TO-39 2N4427 NPN 175 POWER MACRO MRF553 NPN 175 POWER MACRO MRF553T NPN ...
Page 5
MSC1319.PDF 10-25-99 PIN 1. EMITTER 2. COLLECTOR 3. COLLECTOR 4. EMITTER 5. 4. MRF5812, R1 EMITTER 6. BASE 7. BASE 8. EMITTER ...