MRF5812R1

Manufacturer Part NumberMRF5812R1
DescriptionRF NPN Transistor
ManufacturerMicrosemi Corporation
MRF5812R1 datasheet
 
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FUNCTIONAL
Symbol
Minimum Noise Figure
NFmin
(IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz)
G
Power Gain @ Nfmin
NF
(IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz)
G
Maximum Unilateral Gain (1)
U max
IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz
MSG
Maximum Stable Gain
IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz
2
Insertion Gain
|S
|
21
IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz
Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 50 mA
f
S11
(MHz)
|S11|
100
.579
-141
300
.593
-173
500
.598
175
1000
.592
158
2000
.615
115
3000
.691
72
MSC1319.PDF 10-25-99
Test Conditions
S21
|S21|
24
107
8.93
85
5.14
74
2.64
52
1.55
20
1.10
-5
MRF5812, R1, R2
Value
Min.
Typ.
Max.
-
2.0
3.0
13
15.5
-
17.8
-
-
20
-
-
15
-
S12
|S12|
|S22|
.024
49
.397
.045
66
.233
.066
69
.248
.132
72
.347
.310
63
.531
.518
41
.648
Unit
dB
dB
dB
dB
dB
S22
-76
-103
-110
-119
-141
-172