M54577FP MITSUBISHI, M54577FP Datasheet

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M54577FP

Manufacturer Part Number
M54577FP
Description
M54577FP7 UNIT 30MA TRANSISTOR ARRAY
Manufacturer
MITSUBISHI
Datasheet
查询M54577FP供应商
DESCRIPTION
M54577P is seven-circuit transistor arrays. The circuits are
made of NPN transistors. The semiconductor integrated cir-
cuits perform high-current driving with extremely low input-
current supply.
FEATURES
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps)
FUNCTION
The M54577P has seven circuits consisting of NPN transistor.
This I
in series to input. The output transistor emitters are all con-
nected to the GND pin (pin 8), and V
The collector current are capable of sinking 30mA maximum.
Collector-emitter supply voltage is 30V maximum.
Collector-emitter saturation voltage is below 0.35V (I
20mA) Drives active “H” input.
ABSOLUTE MAXIMUM RATINGS
V
V
I
V
P
T
T
C
Symbol
Medium breakdown voltage (BV
Output sink current (I
Driving available with MOS (PMOS, CMOS) IC output
Low output saturation voltage (V
Wide operating temperature range (Ta = –20 to +75 C)
opr
stg
CC
CEO
I
d
C
uses a predriver stage with a diode and 23k
Supply voltage
Collector-emitter voltage
Collector current
Input voltage
Power dissipation
Operating temperature
Storage temperature
C(max)
Parameter
= 30mA)
CE(sat)
CEO
(Unless otherwise noted, Ta = –20 ~ +75 C)
CC
is connected to pin 9.
= 0.35V at I
30V)
Ta = 25 C, when mounted on board
Output, H
Current per circuit output, L
C
= 20mA)
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
resistor
C
=
Conditions
PIN CONFIGURATION
CIRCUIT DIAGRAM
INPUT
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
INPUT
7-UNIT 30mA TRANSISTOR ARRAY
Package type
GND
IN1
IN2
IN3
IN4
IN5
IN6
IN7
100k
23k
The seven circuits share the V
1
2
3
4
5
6
7
8
22k
M54577P
10k
16P4(P)
–55 ~ +125
–0.5 ~ +30
–20 ~ V
–20 ~ +75
16
15
14
13
12
11
10
9
Ratings
1.47
13
30
OUTPUT
V
O1
O2
O3
O4
O5
O6
O7
V
GND
CC
CC
CC
CC
OUTPUT
and GND.
Unit :
Jan.2000
Unit
mA
W
V
V
V
C
C

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M54577FP Summary of contents

Page 1

... DESCRIPTION M54577P is seven-circuit transistor arrays. The circuits are made of NPN transistors. The semiconductor integrated cir- cuits perform high-current driving with extremely low input- current supply. FEATURES Medium breakdown voltage (BV CEO Output sink current (I = 30mA) C(max) Driving available with MOS (PMOS, CMOS) IC output ...

Page 2

... C (1)Pulse generator (PG) characteristics : PRR=1kHz 6ns 6ns (2)Input-output conditions : R = 500 , Vo = 10V (3)Electrostatic capacity C includes floating capacitance at L connections and input capacitance at probes MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> (Unless otherwise noted –20 ~ +75 C) Limits min typ max 4 ...

Page 3

... TYPICAL CHARACTERISTICS Thermal Derating Factor Characteristics 2.0 1.5 1.0 0 Ambient temperature Output Saturation Voltage Collector Current Characteristics 0.02 0.04 Output saturation voltage V MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> 100 10 Grounded Emitter Transfer Characteristics 3.0V ...

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