M54577FP

Manufacturer Part NumberM54577FP
DescriptionM54577FP7 UNIT 30MA TRANSISTOR ARRAY
ManufacturerMITSUBISHI
M54577FP datasheet
 


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DESCRIPTION
M54577P is seven-circuit transistor arrays. The circuits are
made of NPN transistors. The semiconductor integrated cir-
cuits perform high-current driving with extremely low input-
current supply.
FEATURES
Medium breakdown voltage (BV
CEO
Output sink current (I
= 30mA)
C(max)
Driving available with MOS (PMOS, CMOS) IC output
Low output saturation voltage (V
CE(sat)
Wide operating temperature range (Ta = –20 to +75 C)
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps)
FUNCTION
The M54577P has seven circuits consisting of NPN transistor.
This I
uses a predriver stage with a diode and 23k
C
in series to input. The output transistor emitters are all con-
nected to the GND pin (pin 8), and V
CC
The collector current are capable of sinking 30mA maximum.
Collector-emitter supply voltage is 30V maximum.
Collector-emitter saturation voltage is below 0.35V (I
20mA) Drives active “H” input.
ABSOLUTE MAXIMUM RATINGS
(Unless otherwise noted, Ta = –20 ~ +75 C)
Symbol
Parameter
V
Supply voltage
CC
V
Collector-emitter voltage
CEO
I
Collector current
C
V
Input voltage
I
P
Power dissipation
d
T
Operating temperature
opr
T
Storage temperature
stg
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
7-UNIT 30mA TRANSISTOR ARRAY
PIN CONFIGURATION
IN1
IN2
IN3
IN4
INPUT
IN5
IN6
IN7
30V)
GND
Package type
= 0.35V at I
= 20mA)
C
CIRCUIT DIAGRAM
INPUT
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
resistor
is connected to pin 9.
=
C
Conditions
Output, H
Current per circuit output, L
Ta = 25 C, when mounted on board
M54577P
O1
1
16
15
O2
2
14
O3
3
O4
4
OUTPUT
13
O5
5
12
6
O6
11
7
10
O7
8
9
V
CC
16P4(P)
10k
V
CC
23k
OUTPUT
100k
22k
GND
The seven circuits share the V
and GND.
CC
Unit :
Ratings
Unit
13
V
–0.5 ~ +30
V
30
mA
–20 ~ V
V
CC
1.47
W
–20 ~ +75
C
C
–55 ~ +125
Jan.2000