M54577FP MITSUBISHI, M54577FP Datasheet

M54577FP

Manufacturer Part Number

M54577FP

Description

M54577FP7 UNIT 30MA TRANSISTOR ARRAY

Manufacturer

MITSUBISHI

Datasheet

1.M54577FP.pdf (3 pages)

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Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

M54577FP

Manufacturer:

MIT

Quantity:

20 000

Current page: 1 of 3
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DESCRIPTION

M54577P is seven-circuit transistor arrays. The circuits are

made of NPN transistors. The semiconductor integrated cir-

cuits perform high-current driving with extremely low input-

current supply.

FEATURES

APPLICATION

Driving of digit drives of indication elements (LEDs and

lamps)

FUNCTION

The M54577P has seven circuits consisting of NPN transistor.

This I

in series to input. The output transistor emitters are all con-

nected to the GND pin (pin 8), and V

The collector current are capable of sinking 30mA maximum.

Collector-emitter supply voltage is 30V maximum.

Collector-emitter saturation voltage is below 0.35V (I

20mA) Drives active “H” input.

ABSOLUTE MAXIMUM RATINGS

Symbol

Medium breakdown voltage (BV

Output sink current (I

Driving available with MOS (PMOS, CMOS) IC output

Low output saturation voltage (V

Wide operating temperature range (Ta = –20 to +75 C)

opr

stg

CEO

uses a predriver stage with a diode and 23k

Supply voltage

Collector-emitter voltage

Collector current

Input voltage

Power dissipation

Operating temperature

Storage temperature

C(max)

Parameter

= 30mA)

CE(sat)

CEO

(Unless otherwise noted, Ta = –20 ~ +75 C)

is connected to pin 9.

= 0.35V at I

30V)

Ta = 25 C, when mounted on board

Output, H

Current per circuit output, L

= 20mA)

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

resistor

Conditions

PIN CONFIGURATION

CIRCUIT DIAGRAM

INPUT

The diode, indicated with the dotted line, is parasitic, and

cannot be used.

INPUT

7-UNIT 30mA TRANSISTOR ARRAY

Package type

GND

IN1

IN2

IN3

IN4

IN5

IN6

IN7

100k

23k

The seven circuits share the V

22k

M54577P

10k

16P4(P)

–55 ~ +125

–0.5 ~ +30

–20 ~ V

–20 ~ +75

Ratings

1.47

OUTPUT

GND

OUTPUT

and GND.

Unit :

Jan.2000

Unit

Related parts for M54577FP

M54577FP Summary of contents

Page 1

... DESCRIPTION M54577P is seven-circuit transistor arrays. The circuits are made of NPN transistors. The semiconductor integrated cir- cuits perform high-current driving with extremely low input- current supply. FEATURES Medium breakdown voltage (BV CEO Output sink current (I = 30mA) C(max) Driving available with MOS (PMOS, CMOS) IC output ...

Page 2

... C (1)Pulse generator (PG) characteristics : PRR=1kHz 6ns 6ns (2)Input-output conditions : R = 500 , Vo = 10V (3)Electrostatic capacity C includes floating capacitance at L connections and input capacitance at probes MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> (Unless otherwise noted –20 ~ +75 C) Limits min typ max 4 ...

Page 3

... TYPICAL CHARACTERISTICS Thermal Derating Factor Characteristics 2.0 1.5 1.0 0 Ambient temperature Output Saturation Voltage Collector Current Characteristics 0.02 0.04 Output saturation voltage V MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> 100 10 Grounded Emitter Transfer Characteristics 3.0V ...

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