IPB04N03L Infineon Technologies AG, IPB04N03L Datasheet

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IPB04N03L

Manufacturer Part Number
IPB04N03L
Description
OptiMOS Buck converter series
Manufacturer
Infineon Technologies AG
Datasheet

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IPB04N03LA
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OptiMOS
Feature
Type
IPP04N03L
IPB04N03L
Maximum Ratings, at T
Parameter
Continuous drain current
T
Pulsed drain current
T
Avalanche energy, single pulse
I
Repetitive avalanche energy, limited by T
Reverse diode dv/dt
I
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
D
S
C
C
C
N-Channel
Superior thermal resistance
175°C operating temperature
Ideal for fast switching buck converter
Logic Level
Excellent Gate Charge x R
Avalanche rated
dv/dt rated
=55A, V
=80A, V
=25°C
=25°C
=25°C
1)
DS
DD
=24V, di/dt=200A/µs, T
=25V, R
Buck converter series
GS
=25
Package
P- TO220 -3-1 Q67042-S4108
P- TO263 -3-2 Q67042-S4107
1)
j
= 25 °C, unless otherwise specified
DS(on)
jmax
=175°C
product (FOM)
Ordering Code
jmax
Page 1
2)
Symbol
I
I
E
E
dv/dt
V
P
T
D
D puls
AS
AR
GS
tot
j ,
T
Product Summary
V
R
I
stg
D
P- TO263 -3-2
DS
DS(on)
Marking
04N03L
04N03L
max. SMD version
-55... +175
55/175/56
Value
±20
320
188
80
80
60
18
6
P- TO220 -3-1
IPB04N03L
IPP04N03L
2003-01-17
3.9
30
80
Unit
A
mJ
kV/µs
V
W
°C
V
m
A

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IPB04N03L Summary of contents

Page 1

... DS(on) Ordering Code Symbol puls jmax AR dv/dt =175°C jmax tot Page 1 IPP04N03L IPB04N03L Product Summary 3.9 max. SMD version DS(on TO263 -3-2 P- TO220 -3-1 Marking 04N03L 04N03L Value 80 80 320 ±20 188 -55... +175 ...

Page 2

... Diagrams are related to straight lead versions Symbol R thJC R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS I GSS R DS(on DS(on) = 0.8K/W the chip is able to carry I thJC Page 2 IPP04N03L IPB04N03L Values Unit min. typ. max. - 0.51 0.8 K Values Unit min. typ. max 1.2 1.6 2 µ ...

Page 3

... V = (plateau) V =15V, I =40A =25° =0V, I =80A =- /dt=100A/µ Page 3 IPP04N03L IPB04N03L Values Unit min. typ. max. 11 2930 3900 pF - 1150 1520 - 270 420 - 1 12 54.2 81.3 - 18.9 28.3 - 9.9 12 ...

Page 4

... IPP04N03L 30.0µ 100 µ Page 4 IPP04N03L IPB04N03L ) 100 120 140 160 ) 0.50 single pulse - 2003-01-17 190 ° 0.20 0.10 ...

Page 5

... Typ. forward transconductance g = f(I DS(on)max fs parameter 3 Page 5 IPP04N03L IPB04N03L = IPP04N03L [ 3.5 3.8 4.0 4.3 4.5 10 100 ); T =25° 100 120 140 160 ...

Page 6

... Forward character. of reverse diode parameter iss 10 C oss 10 C rss Page 6 IPP04N03L IPB04N03L = 650µA 130µ -60 - 100 ) µ IPP04N03L °C typ ...

Page 7

... V DS max 0 max Drain-source breakdown voltage V (BR)DSS = 25 parameter 125 145 185 ° 120 Q Gate Page 7 IPP04N03L IPB04N03L = = IPP04N03L -60 - 100 140 2003-01-17 °C 200 T j ...

Page 8

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Page 8 IPP04N03L IPB04N03L 2003-01-17 ...

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