IRF7101

Manufacturer Part NumberIRF7101
DescriptionIRF7101HEXFET Power MOSFET
ManufacturerInternational Rectifier Corp.
IRF7101 datasheet
 


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Applications
l
Synchronous MOSFET for Notebook
Processor Power
l
Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
Benefits
l
Very Low R
at 4.5V V
DS(on)
GS
l
Ultra-Low Gate Impedance
l
Fully Characterized Avalanche Voltage
and Current
l
20V V
Max. Gate Rating
GS
Absolute Maximum Ratings
Parameter
V
Drain-to-Source Voltage
DS
V
Gate-to-Source Voltage
GS
Continuous Drain Current, V
I
@ T
= 25°C
D
A
Continuous Drain Current, V
I
@ T
= 70°C
D
A
Pulsed Drain Current
I
DM
P
@T
= 25°C
Power Dissipation
D
A
P
@T
= 70°C
Power Dissipation
D
A
Linear Derating Factor
T
Operating Junction and
J
T
Storage Temperature Range
STG
Thermal Resistance
Parameter
R
Junction-to-Drain Lead
θJL
Junction-to-Ambient
R
θJA
Notes  through
are on page 10
www.irf.com
HEXFET Power MOSFET
V
R
DSS
DS(on)
4.0m @V
30V
1
S
2
S
3
S
4
G
Top View
@ 10V
GS
@ 10V
GS
-55 to + 155
Typ.
–––
f
–––
IRF7832
max
Qg
= 10V 34nC
GS
A
A
8
D
7
D
6
D
5
D
SO-8
Max.
Units
30
V
± 20
20
16
A
160
2.5
W
1.6
0.02
W/°C
°C
Max.
Units
20
°C/W
50
1
1/14/04

IRF7101 Summary of contents