K6X1008C2D-BF55

Manufacturer Part NumberK6X1008C2D-BF55
DescriptionK6X1008C2D-BF55128Kx8 bit Low Power CMOS Static RAM
ManufacturerSamsung
K6X1008C2D-BF55 datasheet
 


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GENERAL DESCRIPTION

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K6X1008C2D Family
128Kx8 bit Low Power full CMOS Static RAM
FEATURES
Process Technology: Full CMOS
Organization: 128K x 8
Power Supply Voltage: 4.5~5.5V
Low Data Retention Voltage: 2V(Min)
Three state output and TTL Compatible
Package Type: 32-DIP-600, 32-SOP-525,
32-SOP-525, 32-TSOP1-0820F
PRODUCT FAMILY
Operating
Product Family
Temperature
K6X1008C2D-B
Commercial(0~70 C)
K6X1008C2D-F
Industrial(-40~85 C)
K6X1008C2D-Q
Automotive(-40~125 C)
1. The parameters are tested with 50pF test load
PIN DESCRIPTION
VCC
NC
1
32
A15
A16
2
31
30
CS2
A14
3
A11
1
4
29
WE
A12
A9
2
A7
5
28
A13
A8
3
A13
4
32-SOP
A6
6
27
A8
WE
5
26
CS2
6
A5
7
A9
32-DIP
A15
7
25
A11
A4
8
VCC
8
NC
9
Type1-Forward
24
OE
A3
9
A16
10
23
10
A10
A14
A2
11
A12
12
22
A1
11
CS1
A7
13
A6
14
21
A0
12
I/O8
A5
15
20
I/O1
13
I/O7
A4
16
19
I/O6
I/O2
14
18
I/O5
I/O3
15
17
I/O4
VSS
16
Name
Function
CS
, CS
Chip Select Input
1
2
OE
Output Enable Input
WE
Write Enable Input
I/O
~I/O
Data Inputs/Outputs
1
8
A
~A
Address Inputs
0
16
Vcc
Power
Vss
Ground
NC
No Connection
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.

GENERAL DESCRIPTION

The K6X1008C2D families are fabricated by SAMSUNG s
advanced CMOS process technology. The families support
verious operating temperature ranges and have various pack-
age types for user flexibility of system design. The families
also support low data retention voltage for battery back-up
operation with low data retention current.
Power Dissipation
Vcc Range
Speed
Standby
(I
, Max)
SB1
10 A
4.5~5.5V
55
1)
/70ns
15 A
25 A
FUNCTIONAL BLOCK DIAGRAM
32
OE
31
A10
Row
30
CS1
addresses
29
I/O8
28
I/O7
27
I/O6
26
I/O5
32-TSOP
25
I/O4
24
VSS
23
I/O3
22
I/O2
21
I/O1
20
A0
19
A1
18
A2
I/O
1
17
A3
I/O
8
CS
1
Control
CS
2
logic
WE
OE
2
CMOS SRAM
PKG Type
Operating
(I
Max)
CC2,
32-DIP-600, 32-SOP-525,
32-SOP-525
25mA
32-TSOP1-0820F
32-SOP-525, 32-TSOP1-0820F
Clk gen.
Precharge circuit.
Row
Memory array
select
Data
I/O Circuit
cont
Column select
Data
cont
Column Addresses
Revision 1.0
September 2003