K6X1008C2D-BF55

Manufacturer Part NumberK6X1008C2D-BF55
DescriptionK6X1008C2D-BF55128Kx8 bit Low Power CMOS Static RAM
ManufacturerSamsung
K6X1008C2D-BF55 datasheet
 


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Page 4/10:

RECOMMENDED DC OPERATING CONDITIONS

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K6X1008C2D Family

RECOMMENDED DC OPERATING CONDITIONS

Item
Supply voltage
Ground
Input high voltage
Input low voltage
Note:
1. Commercial Product: T
=0 to 70 C, Otherwise specified
A
Industrial Product: T
=-40 to 85 C, Otherwise specified
A
Automotive Product: T
=-40 to 125 C, Otherwise specified
A
2. Overshoot: Vcc+3.0V in case of pulse width 30ns.
3. Undershoot: -3.0V in case of pulse width 30ns.
4. Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE
1
)
(f=1MHz, TA=25 C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Input leakage current
I
LI
Output leakage current
I
LO
Operating power supply current
I
CC
I
CC1
Average operating current
I
CC2
Output low voltage
V
OL
Output high voltage
V
OH
Standby Current(TTL)
I
SB
Standby Current(CMOS)
I
SB1
1)
Symbol
Min
Vcc
4.5
Vss
0
V
2.2
IH
V
3)
IL
-0.5
Symbol
Test Condition
C
V
=0V
IN
IN
C
V
=0V
IO
IO
Test Conditions
V
=Vss to Vcc
IN
CS
=V
or CS
=V
or OE=V
or WE=V
1
IH
2
IL
IH
IL
I
=0mA, CS
=V
, CS
=V
V
=V
or V
IO
1
IL
2
IH,
IN
IH
IL
Cycle time=1 s, 100%duty, I
=0mA, CS
IO
1
V
0.2V or V
V
-0.2V
IN
IN
CC
Cycle time=Min, 100% duty, I
=0mA, CS
IO
1
V
=V
or V
IN
IH
IL
I
=2.1mA
OL
I
=-1.0mA
OH
CS
=V
, CS2=V
, Other inputs=V
or V
1
IH
IL
IH
IL
CS
Vcc-0.2V, CS
Vcc-0.2V or
1
2
CS
0.2V, Other inputs=0~Vcc
2
4
CMOS SRAM
Typ
Max
Unit
5.0
5.5
V
0
0
V
-
2)
V
Vcc+0.5
-
0.8
V
Min
Max
Unit
-
8
pF
-
10
pF
Min Typ Max Unit
-1
-
1
, V
=Vss to Vcc
-1
-
1
IO
, Read
-
-
5
0.2V, CS
Vcc-0.2V,
2
-
-
7
=V
, CS
=V
IL
2
IH,
-
-
25
-
-
0.4
2.4
-
-
-
-
0.4
K6X1008C2D-B
-
-
10
K6X1008C2D-F
-
-
15
K6X1008C2D-Q
-
-
25
Revision 1.0
September 2003
A
A
mA
mA
mA
V
V
mA
A
A
A