K6X4016T3F-TB55

Manufacturer Part NumberK6X4016T3F-TB55
DescriptionK6X4016T3F-TB55256Kx16 bit Low Power and Low Voltage CMOS Static RAM
ManufacturerSamsung
K6X4016T3F-TB55 datasheet
 


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K6X4016T3F Family
Document Title
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
Revision History
Revision No
History
0.0
Initial draft
0.1
Revised
- Added Commercial product
- Deleted
44-TSOP2-400R Package Type.
- Added 55ns product(@ 3.0V~3.6V)
1.0
Finalized
Revised
- Changed I
(Operating power supply current) from 4mA to 2mA
CC
- Changed I
1(Average operating current) from 4mA to 3mA
CC
- Changed I
2(Average operating current) from 40mA to 25mA
CC
- Changed I
1(Standby Current(CMOS), Commercial)
SB
from 15 A to 10 A
- Changed I
1(Standby Current(CMOS), Industrial)
SB
from 20 A to 10 A
- Changed I
1(Standby Current(CMOS), Automotive)
SB
from 30 A to 20 A
- Changed I
(Data retention current, Commercial)
DR
from 15 A to 10 A
- Changed I
(Data retention current, Industrial)
DR
from 20 A to 10 A
- Changed I
(Data retention current, Automotive)
DR
from 30 A to 20 A
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
CMOS SRAM
Draft Date
July 29, 2002
December 2, 2002
August 8, 2003
1
Remark
Preliminary
Preliminary
Final
Revision 1.0
August 2003

K6X4016T3F-TB55 Summary of contents