MRF18085AR3 Motorola, MRF18085AR3 Datasheet

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MRF18085AR3

Manufacturer Part Number
MRF18085AR3
Description
MRF18085AR3RF Power Field Effect Transistors
Manufacturer
Motorola
Datasheet
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 Freescale Semiconductor, Inc., 2004. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
f r e q u e n c i e s f r o m 1 8 0 0 t o 2 0 0 0 M H z . S u i t a b l e f o r T D M A , C D M A a n d
multicarrier amplifier applications. To be used in Class AB for PCN - PCS/
cellular radio and WLL applications. Specified for GSM - GSM EDGE
1805 - 1880 MHz.
• GSM and GSM EDGE Performance, Full Frequency Band
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, @ P1dB Output Power,
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model
Machine Model
D e s i g n e d f o r G S M a n d G S M E D G E b a s e s t a t i o n a p p l i c a t i o n s w i t h
1. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
(1805 - 1880 MHz)
@ f = 1805 MHz
40µ″ Nominal.
Derate above 25°C
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Power Gain - 15 dB (Typ) @ 85 Watts CW
Efficiency - 52% (Typ) @ 85 Watts CW
Select Documentation/Application Notes - AN1955.
C
= 25°C
Test Conditions
Characteristic
Rating
Symbol
Symbol
V
R
V
T
P
DSS
T
θJC
stg
GS
D
J
CASE 465A - 06, STYLE 1
CASE 465 - 06, STYLE 1
MRF18085ALSR3
MRF18085ALSR3
1800 - 1880 MHz, 85 W, 26 V
MRF18085AR3
MRF18085AR3 MRF18085ALSR3
MRF18085AR3
LATERAL N - CHANNEL
RF POWER MOSFETs
NI - 780S
NI - 780
GSM/GSM EDGE
M3 (Minimum)
1 (Minimum)
- 65 to +150
- 0.5, +65
- 0.5, +15
Value
Value
Class
1.56
0.79
273
200
(1)
Rev. 4, 12/2004
MRF18085A
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
W
5 - 1

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MRF18085AR3 Summary of contents

Page 1

... CASE 465 - 06, STYLE 780 MRF18085AR3 CASE 465A - 06, STYLE 780S MRF18085ALSR3 Symbol Value Unit V - 0.5, +65 Vdc DSS V - 0.5, +15 Vdc GS P 273 W D 1.56 W/°C ° +150 stg °C T 200 J (1) Symbol Value Unit °C/W R 0.79 θJC Class 1 (Minimum) M3 (Minimum) MRF18085AR3 MRF18085ALSR3 ...

Page 2

... DD DQ VSWR = 5:1, All Phase Angles at Frequency of Tests) 1. Part is internally matched both on input and output meet application requirements, Freescale test fixtures have been designed to cover the full GSM1800 band, ensuring batch batch consistency. MRF18085AR3 MRF18085ALSR3 25°C unless otherwise noted) C Symbol V ...

Page 3

... Microstrip 0.122″ x 0.925″ Microstrip 0.547″ x 0.925″ Microstrip 0.394″ x 0.177″ Microstrip 0.180″ x 0.087″ Microstrip 0.686″ x 0.087″ Microstrip 0.294″ x 0.087″ Microstrip Taconic TLX8, 30 mils, ε C10 MRF18085AR3 MRF18085ALSR3 ...

Page 4

... Figure 5. Power Gain versus Output Power IRL @ IRL @ 1750 1800 1850 f, FREQUENCY (MHz) Figure 7. Power Gain versus Frequency MRF18085AR3 MRF18085ALSR3 TYPICAL CHARACTERISTICS Vdc 1840 MHz T = 25_C 800 mA ...

Page 5

... MHz 1710 1.13 - j3.62 1.79 - j2.88 1785 1.61 - j4.23 1.82 - j3.15 1805 1.69 - j4.34 1.90 - j2.66 1880 2.83 - j5.25 2.09 - j2.77 1930 3.00 - j5.18 2.01 - j2.44 1960 4.39 - j4.97 2.01 - j2.57 1990 6.59 - j4.74 1.79 - j2. Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Device Input Under Test Matching Network Z Z source load Output Matching Network MRF18085AR3 MRF18085ALSR3 ...

Page 6

... MRF18085AR3 MRF18085ALSR3 NOTES RF Device Data Freescale Semiconductor ...

Page 7

... U −−− 0.040 −−− 1. −−− 0.030 −−− 0.76 aaa 0.005 REF 0.127 REF bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: F PIN 1. DRAIN 2. GATE 5. SOURCE MRF18085AR3 MRF18085ALSR3 ...

Page 8

... Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF18085AR3 MRF18085ALSR3 Document Number: MRF18085A Rev. 4, 12/2004 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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