MRF5S19150H Freescale Semiconductor, Inc, MRF5S19150H Datasheet

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MRF5S19150H

Manufacturer Part Number
MRF5S19150H
Description
MRF5S19150HRF Power Field Effect Transistors
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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 Freescale Semiconductor, Inc., 2004. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
• Typical 2 - Carrier N - CDMA Performance for V
• Capable of Handling 5:1 VSWR, @ 28 Vdc, f1 = 1960 MHz,
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched, Controlled Q, for Ease of Use
• Qualified Up to a Maximum of 32 V Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
CW Operation
Thermal Resistance, Junction to Case
Designed for PCN and PCS base station applications at frequencies from
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
2. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
1400 mA, Avg., P
(Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =
1.2288 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
100 Watts CW Output Power
Derate above 25°C
Case Temperature 80°C, 100 W CW
Case Temperature 75°C, 32 W CW
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Power Gain — 14 dB
Drain Efficiency — 26%
IM3 @ 2.5 MHz Offset — - 36.5 dBc @ 1.2288 MHz Bandwidth
ACPR @ 885 kHz Offset — - 50 dB @ 30 kHz Bandwidth
the MTTF calculators by product.
Select Documentation/Application Notes - AN1955.
out
= 32 Watts Avg., Full Frequency Band, IS - 95 CDMA
C
= 25°C
Characteristic
Rating
µ
″ Nominal.
DD
= 28 Volts, I
DQ
=
Symbol
Symbol
V
R
V
T
CW
P
DSS
T
θJC
stg
GS
D
CASE 465B - 03, STYLE 1
CASE 465C - 02, STYLE 1
J
MRF5S19150HR3 MRF5S19150HSR3
MRF5S19150HSR3
MRF5S19150HSR3
MRF5S19150HR3
MRF5S19150HR3
1990 MHz, 32 W AVG., 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
NI - 880S
NI - 880
- 65 to +150
Value
2 x N - CDMA
- 0.5, +65
- 0.5, +15
Value
2.44
0.41
0.44
427
200
100
(1,2)
MRF5S19150H
Rev. 1, 12/2004
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
W
W
1

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MRF5S19150H Summary of contents

Page 1

... RF POWER MOSFETs CASE 465B - 03, STYLE 880 MRF5S19150HR3 CASE 465C - 02, STYLE 880S MRF5S19150HSR3 Symbol Value Unit V - 0.5, +65 Vdc DSS V - 0.5, +15 Vdc GS P 427 W D 2.44 W/°C ° +150 stg °C T 200 J CW 100 W (1,2) Symbol Value Unit °C/W R θJC 0.41 0.44 MRF5S19150HR3 MRF5S19150HSR3 1 ...

Page 2

... Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. Peak/Avg = 9 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. MRF5S19150HR3 MRF5S19150HSR3 2 = 25°C unless otherwise noted) C Symbol I DSS I ...

Page 3

... Z6 0.557″ x 1.030″ x 0.237″ Microstrip Taper Z7 0.103″ x 1.030″ Microstrip Z8 1.280″ x 0.046″ Microstrip Figure 1. MRF5S19150HR3(SR3) Test Circuit Schematic Table 5. MRF5S19150HR3(SR3) Test Circuit Component Designations and Values Part B1 C4, C5, C13, C14, C24, C25 C8, C10 C6, C12, C16, C17, C18, C27, C28, C29 ...

Page 4

... Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF5S19150HR3(SR3) Test Circuit Component Layout MRF5S19150HR3 MRF5S19150HSR3 4 ...

Page 5

... P , OUTPUT POWER (WATTS) PEP out Output Power P3dB = 53.71 dBm (234. Vdc 1400 Pulsed CW, 8 µsec (on), 1 msec (off) Center Frequency = 1960 MHz INPUT POWER (dBm) in Input Power MRF5S19150HR3 MRF5S19150HSR3 ...

Page 6

... Integrated BW Integrated BW −80 −90 −100 −7.5 −6 −4.5 −3 −1.5 0 1.5 f, FREQUENCY (MHz) Figure Carrier N - CDMA Spectrum MRF5S19150HR3 MRF5S19150HSR3 6 TYPICAL CHARACTERISTICS = 28 Vdc 1400 OUTPUT POWER (WATTS) AVG., N−CDMA out 9 10 +IM3 @ ...

Page 7

... DD DQ out source load Ω Ω MHz 1930 1.89 - j5.24 1.06 - j1.58 1960 1.64 - j5.29 0.88 - j1.37 1990 1.3 - j5.49 0.90 - j1. Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Device Input Under Test Matching Network Z Z source load Output Matching Network MRF5S19150HR3 MRF5S19150HSR3 7 ...

Page 8

... MRF5S19150HR3 MRF5S19150HSR3 8 NOTES RF Device Data Freescale Semiconductor ...

Page 9

... RF Device Data Freescale Semiconductor NOTES MRF5S19150HR3 MRF5S19150HSR3 9 ...

Page 10

... MRF5S19150HR3 MRF5S19150HSR3 10 NOTES RF Device Data Freescale Semiconductor ...

Page 11

... E 0.035 0.045 0.89 1.14 F 0.003 0.006 0.08 0.15 H 0.057 0.067 1.45 1.70 K 0.170 0.210 4.32 5.33 M 0.872 0.888 22.15 22.55 N 0.871 0.889 19.30 22.60 R 0.515 0.525 13.10 13.30 S 0.515 0.525 13.10 13.30 aaa 0.007 REF 0.178 REF bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE F 3. SOURCE MRF5S19150HR3 MRF5S19150HSR3 11 ...

Page 12

... Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF5S19150HR3 MRF5S19150HSR3 Document Number: MRF5S19150H Rev. 1, 12/2004 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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