MRF5S19150H

Manufacturer Part NumberMRF5S19150H
DescriptionMRF5S19150HRF Power Field Effect Transistors
ManufacturerFreescale Semiconductor, Inc
MRF5S19150H datasheet
 


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查询MRF5S19100H供应商
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications at frequencies from
1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
• Typical 2 - Carrier N - CDMA Performance for V
1400 mA, Avg., P
= 32 Watts Avg., Full Frequency Band, IS - 95 CDMA
out
(Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =
1.2288 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 14 dB
Drain Efficiency — 26%
IM3 @ 2.5 MHz Offset — - 36.5 dBc @ 1.2288 MHz Bandwidth
ACPR @ 885 kHz Offset — - 50 dB @ 30 kHz Bandwidth
• Capable of Handling 5:1 VSWR, @ 28 Vdc, f1 = 1960 MHz,
100 Watts CW Output Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched, Controlled Q, for Ease of Use
• Qualified Up to a Maximum of 32 V Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
= 25°C
C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
CW Operation
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 75°C, 32 W CW
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
 Freescale Semiconductor, Inc., 2004. All rights reserved.
RF Device Data
Freescale Semiconductor
= 28 Volts, I
=
DD
DQ
″ Nominal.
µ
Rating
MRF5S19150H
Rev. 1, 12/2004
MRF5S19150HR3
MRF5S19150HSR3
1990 MHz, 32 W AVG., 28 V
2 x N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF5S19150HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRF5S19150HSR3
Symbol
Value
Unit
V
- 0.5, +65
Vdc
DSS
V
- 0.5, +15
Vdc
GS
P
427
W
D
2.44
W/°C
°C
T
- 65 to +150
stg
°C
T
200
J
CW
100
W
(1,2)
Symbol
Value
Unit
°C/W
R
θJC
0.41
0.44
MRF5S19150HR3 MRF5S19150HSR3
1

MRF5S19150H Summary of contents