MRF5S21090H Freescale Semiconductor, Inc, MRF5S21090H Datasheet

MRF5S21090H

Manufacturer Part Number

MRF5S21090H

Description

MRF5S21090HRF Power Field Effect Transistors

Manufacturer

Freescale Semiconductor, Inc

Datasheet

1.MRF5S21090H.pdf (12 pages)

Available stocks

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Company:

Meier Automation Equipment Co., Limited

Part Number:

MRF5S21090HR3

Manufacturer:

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Quantity:

20 000

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RF Device Data

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-

t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

applications.

• Typical 2 - carrier W - CDMA Performance: V

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 125 Watts CW

• Characterized with Series Equivalent Large - Signal Impedance Parameters

• Internally Matched, Controlled Q, for Ease of Use

• Qualified Up to a Maximum of 32 V

• Integrated ESD Protection

• Lower Thermal Resistance Package

• Low Gold Plating Thickness on Leads, 40

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Table 2. Thermal Characteristics

Drain- Source Voltage

Gate - Source Voltage

Total Device Dissipation @ T

Storage Temperature Range

Operating Junction Temperature

CW Operation

Thermal Resistance, Junction to Case

Designed for W- CDMA base station applications with frequencies from 2110

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

2. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.

Output Power

Derate above 25°C

Case Temperature 80°C, 100 W CW

Case Temperature 75°C, 33 W CW

out

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Power Gain — 12.5 dB

Efficiency — 25%

IM3 @ 10 MHz Offset — - 37 dBc @ 3.84 MHz Channel Bandwidth

ACPR @ 5 MHz Offset — - 39 dBc @ 3.84 MHz Channel Bandwidth

the MTTF calculators by product.

Select Documentation/Application Notes - AN1955.

= 33 Watts Avg., Full Frequency Band, Channel Bandwidth =

= 25°C

Characteristic

Rating

Operation

″ Nominal.

= 28 Volts, I

= 1300 mA,

Symbol

DSS

θJC

stg

CASE 465B - 03, STYLE 1

CASE 465C - 02, STYLE 1

MRF5S21150HR3 MRF5S21150HSR3

MRF5S21150HSR3

MRF5S21150HR3

MRF5S21150HSR3

MRF5S21150HR3

2170 MHz, 33 W AVG., 28 V

LATERAL N - CHANNEL

RF POWER MOSFETs

NI - 880S

NI - 880

- 65 to +150

Value

2 x W - CDMA

- 0.5, +65

- 0.5, +15

Value

0.46

0.47

380

200

125

2.2

(1,2)

MRF5S21150H

Rev. 0, 1/2005

W/°C

°C/W

Unit

Vdc

°C

Related parts for MRF5S21090H

MRF5S21090H Summary of contents

Page 1

... Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.  Freescale Semiconductor, Inc., 2005. All rights reserved. RF Device Data Freescale Semiconductor = 28 Volts, I ...

Page 2

Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Charge Device Model Table 4. Electrical Characteristics (T Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current ( Vdc Vdc Zero ...

Page 3

R1 V bias + INPUT 0.500″ x 0.083″ Microstrip Z2 0.505″ x 0.083″ Microstrip Z3 0.536″ x 0.083″ Microstrip Z4 0.776″ x 0.083″ Microstrip Z5 0.119″ x 1.024″ Microstrip ...

Page 4

Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on ...

Page 5

IM3 ACPR 6 5 2060 2080 Figure Carrier W - CDMA Broadband Performance @ 1900 mA DQ 1600 mA 13 1300 mA 1000 ...

Page 6

Vdc 1300 mA 2135 MHz 2145 MHz W−CDMA, 10 MHz 25 @ 3.84 MHz Bandwidth, Peak/Avg 0.01% Probability (CCDF) 20 η D ...

Page 7

MHz f = 2080 MHz f = 2080 MHz Figure 12. Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor Z load = 25 Ω 2200 MHz Z source V = ...

Page 8

MRF5S21150HR3 MRF5S21150HSR3 8 NOTES RF Device Data Freescale Semiconductor ...

Page 9

RF Device Data Freescale Semiconductor NOTES MRF5S21150HR3 MRF5S21150HSR3 9 ...

Page 10

MRF5S21150HR3 MRF5S21150HSR3 10 NOTES RF Device Data Freescale Semiconductor ...

Page 11

(FLANGE bbb (INSULATOR) bbb (LID) ccc (FLANGE ...

Page 12

... Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners.  Freescale Semiconductor, Inc. 2005. All rights reserved. ...

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