CM100DUS-12F_11 MITSUBISHI, CM100DUS-12F_11 Datasheet

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CM100DUS-12F_11

Manufacturer Part Number
CM100DUS-12F_11
Description
Manufacturer
MITSUBISHI
Datasheet
APPLICATION
CM100DUS-12F
OUTLINE DRAWING & INTERNAL CONNECTION
High frequency (30 kHz ~ 60 kHz) switching use: Induction heating, Power supply, etc.
Tolerance otherwise specified
Division of Dimension
over 30
over 120
over
over
0.5
3
6
Dual (Half-Bridge)
to
to 30
to 120
to 400
to
3
6
±0.2
±0.3
±0.5
±0.8
±1.2
Tolerance
C2E1
- 4
Collector current I
Collector-emitter voltage V
Maximum junction temperature T
●Flat base Type
●Copper base plate
●RoHS Directive compliant
●UL Recognized under UL1557, File E323585
th
Tr2
generation Fast switching IGBT module -
1
Di2
INTERNAL CONNECTION
RTC
E2
C
.............…............…
RTC
CM100DUS-12F
MITSUBISHI IGBT MODULES
HIGH POWER SWITCHING USE
Di1
CES
...........…
Tr1
jmax
INSULATED TYPE
C1
Dimension in mm
...
February-2011
1 0 0 A
6 0 0 V
1 5 0 °C

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CM100DUS-12F_11 Summary of contents

Page 1

... MITSUBISHI IGBT MODULES CM100DUS-12F HIGH POWER SWITCHING USE - 4 generation Fast switching IGBT module - th Collector current I .............…............… C Collector-emitter voltage V Maximum junction temperature T ●Flat base Type ●Copper base plate ●RoHS Directive compliant ● ...

Page 2

... Thermal grease applied Junction to case, per IGBT Junction to case, per FWDi Conditions Main terminals M 5 screw Mounting to heat sink M 6 screw - (Note.8) On the centerline MITSUBISHI IGBT MODULES CM100DUS-12F HIGH POWER SWITCHING USE INSULATED TYPE Rating Unit 600 V ±20 V 100 A 200 350 ...

Page 3

... Concave +: Convex Tr1/Tr2: IGBT, Di1/Di2: FWDi 3 MITSUBISHI IGBT MODULES CM100DUS-12F HIGH POWER SWITCHING USE INSULATED TYPE Limits Min. Typ. Max. - 300 400 13.5 15.0 16.5 6.3 - ...

Page 4

... 0.1×V 0.1× IGBT Turn-off switching energy 4 MITSUBISHI IGBT MODULES CM100DUS-12F HIGH POWER SWITCHING USE INSULATED TYPE C1 C1 Short- circuited Es1 C2E1 C2E1 Short- circuited G2 E2 Es2 E2 Di2 V test circuit ...

Page 5

... I =200 =100 A C 100 MITSUBISHI IGBT MODULES CM100DUS-12F HIGH POWER SWITCHING USE INSULATED TYPE COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL =125 ° =25 ° 100 150 COLLECTOR CURRENT I (A) C FREE WHEELING DIODE ...

Page 6

... 0 COLLECTOR CURRENT I (A) C EMITTER CURRENT I (A) E MITSUBISHI IGBT MODULES CM100DUS-12F HIGH POWER SWITCHING USE FREE WHEELING DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) V =300 =125 °C, INDUCTIVE LOAD j 100 10 100 1 EMITTER CURRENT I HALF-BRIDGE SWITCHING CHARACTERISTICS ...

Page 7

... CAPACITANCE CHARACTERISTICS (TYPICAL) G-E short-circuited, T =25 °C j 100 10 1 0.1 0 COLLECTOR-EMITTER VOLTAGE V MITSUBISHI IGBT MODULES CM100DUS-12F GATE CHARGE CHARACTERISTICS 100 0 100 200 (V) GATE CHARGE Q CE TRANSIENT THERMAL IMPEDANCE 1 0.1 0.01 0.001 0.00001 0.0001 R =0 ...

Page 8

... Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. ·Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. MITSUBISHI IGBT MODULES CM100DUS-12F HIGH POWER SWITCHING USE 8 INSULATED TYPE ...

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