PM50CLB120_05 MITSUBISHI, PM50CLB120_05 Datasheet

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PM50CLB120_05

Manufacturer Part Number
PM50CLB120_05
Description
FLAT-BASE TYPE INSULATED PACKAGE
Manufacturer
MITSUBISHI
Datasheet
APPLICATION
General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES
PM50CLB120
7.75
2.5
7
19.75
19.5
22
3.25
B
4
1
4
3-2
16
23
U
5
4
3-2
16
106
4
66.5
98.25
120
0.25
9
23
3-2
V
16
19- 0.5
4
4
13
15.25
6-2
23
19
W
4
4
MITSUBISHI <INTELLIGENT POWER MODULES>
FEATURE
a) Adopting new 5th generation IGBT (CSTBT) chip, which
b) I adopt the over-temperature conservation by Tj detection of
c) New small package
• 3 50A, 1200V Current-sense IGBT type inverter
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for, short-
• Acoustic noise-less 5.5kW/7.5kW class inverter application
• UL Recognized
performance is improved by 1 m fine rule process.
For example, typical V
CSTBT chip, and error output is possible from all each con-
servation upper and lower arm of IPM.
Reduce the package size by 32%, thickness by 22% from
S-DASH series.
circuit, over-temperature & under-voltage (P-Fo available
from upper arm devices)
MOUNTING HOLES
2- 5.5
PM50CLB120
Yellow Card No.E80276(N)
ce
(sat)=1.9V @Tj=125 C
Terminal code
INSULATED PACKAGE
File No.E80271
10. WFO
1.5
1. VUPC
2. UFO
3. UP
4. VUP1
5. VVPC
6. VFO
7. VP
8. VVP1
9. VWPC
9.5
FLAT-BASE TYPE
Dimensions in mm
11. WP
12. VWP1
13. VNC
14. VN1
15. NC
16. UN
17. VN
18. WN
19. Fo
17
16
3
May 2005

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PM50CLB120_05 Summary of contents

Page 1

... MITSUBISHI <INTELLIGENT POWER MODULES> PM50CLB120 FEATURE a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved fine rule process. For example, typical adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is possible from all each con- servation upper and lower arm of IPM ...

Page 2

INTERNAL FUNCTIONS BLOCK DIAGRAM 1.5k Gnd In Fo Vcc Gnd Si Out OT NC MAXIMUM RATINGS ( unless otherwise noted) INVERTER PART Symbol Parameter V Collector-Emitter Voltage CES I ...

Page 3

TOTAL SYSTEM Symbol Parameter Supply Voltage Protected by V CC(PROT Supply Voltage (Surge) CC(surge) Storage Temperature T stg V Isolation Voltage iso THERMAL RESISTANCES Symbol Parameter R Junction to case Thermal th(j-c)Q R Resistances th(j-c)F R Contact Thermal ...

Page 4

CONTROL PART Symbol Parameter I Circuit Current D V Input ON Threshold Voltage th(ON) Input OFF Threshold Voltage V th(OFF) Short Circuit Trip Level SC Short Circuit Current Delay t off(SC) Time OT Over Temperature Protection OT r Supply Circuit ...

Page 5

PRECAUTIONS FOR TESTING 1. Before appling any control supply voltage (V sponding supply voltage and each input signal should be kept off state. After this, the specified ON and OFF level setting for each input signal should be done. 2. ...

Page 6

≥0 20k ≥ ≥0.1 20k ≥ ≥0.1 20k ≥ ≥0 NOTES FOR STABLE AND SAFE OPERATION ; • Design the ...

Page 7

PERFORMANCE CURVES OUTPUT CHARACTERISTICS (INVERTER PART · TYPICAL 17V 50 D 15V 40 13V 0.5 1 COLLECTOR-EMITTER VOLTAGE V COLLECTOR-EMITTER SATURATION VOLTAGE (VS CHARACTERISTICS D ...

Page 8

DIODE FORWARD CHARACTERISTICS (INVERTER PART · TYPICAL 15V 125 0.5 1 ...

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