BSM50GD120DN2E3226 Siemens Semiconductor Group, BSM50GD120DN2E3226 Datasheet
BSM50GD120DN2E3226
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BSM50GD120DN2E3226 Summary of contents
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IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate • E3226: long terminals, limited current per terminal Type BSM 50 GD120DN2E3226 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage ...
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Electrical Characteristics Parameter Static Characteristics Gate threshold voltage CE, C Collector-emitter saturation voltage ° ...
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Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 600 Gon Rise time V = 600 ...
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Power dissipation tot C parameter: T 150 °C j 360 W P tot 280 240 200 160 120 Collector current ...
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Typ. output characteristics parameter µ ° 17V 15V I 70 13V C 11V ...
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Typ. gate charge Gate parameter puls 600 120 160 200 240 280 ...
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Typ. switching time inductive load , T = 125° par 600 ± ...
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Forward characteristics of fast recovery I = f(V ) reverse diode F F parameter =125° 0.0 0.5 1.0 1.5 Semiconductor Group Transient thermal impedance ...
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Package Outlines Dimensions in mm Weight: 180 g Semiconductor Group Circuit Diagram 9 BSM 50 GD120DN2E3226 Jan-10-1997 ...