2SD1030 Panasonic, 2SD1030 Datasheet
2SD1030
Manufacturer Part Number
2SD1030
Description
Manufacturer
Panasonic
Datasheet
1.2SD1030.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SD1030-S
Manufacturer:
Panasonic
Quantity:
69 200
Part Number:
2SD1030-S(TX)
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Part Number:
2SD1030-T(TX)
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Company:
Part Number:
2SD10300RL
Manufacturer:
PANASONIC
Quantity:
2 680
Transistor
2SD1030
Silicon NPN epitaxial planer type
For low-frequency amplification
*
h
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
FE
Features
High foward current transfer ratio h
Low collector to emitter saturation voltage V
High emitter to base voltage V
Low noise voltage NV.
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings
Electrical Characteristics
Rank classification
Marking Symbol
Parameter
Rank
h
Parameter
FE
400 ~ 800
Symbol
1ZR
V
V
V
I
I
P
T
T
CP
C
R
C
j
stg
CBO
CEO
EBO
EBO
I
I
V
V
V
h
V
f
CBO
CEO
T
FE
(Ta=25˚C)
Symbol
CBO
CEO
EBO
CE(sat)
*
.
600 ~ 1200
(Ta=25˚C)
FE
–55 ~ +150
.
1ZS
Ratings
S
100
200
150
50
40
15
50
V
V
I
I
I
V
I
V
CE(sat)
C
C
E
C
CB
CE
CE
CB
= 10 A, I
= 1mA, I
= 10 A, I
= 10mA, I
1000 ~ 2000
= 20V, I
= 10V, I
= 20V, I
= 10V, I
.
1ZT
T
B
Unit
mW
C
mA
mA
Conditions
E
B
C
˚C
˚C
E
E
B
V
V
V
= 0
= 0
= 0
= 0
= 0
= 2mA
= –2mA, f = 200MHz
= 1mA
Marking symbol :
1:Base
2:Emitter
3:Collector
0.1 to 0.3
0.65 0.15
0.4 0.2
min
400
50
40
15
1
2
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
1000
0.05
120
1.5
1Z
2.8
typ
+0.2
–0.3
+0.25
–0.05
2000
max
100
0.2
3
1
0.65 0.15
Unit: mm
MHz
Unit
nA
V
V
V
V
A
1
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2SD1030 Summary of contents
Page 1
... Transistor 2SD1030 Silicon NPN epitaxial planer type For low-frequency amplification Features High foward current transfer ratio h Low collector to emitter saturation voltage V High emitter to base voltage V EBO Low noise voltage NV. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing ...
Page 2
... Collector to emitter voltage — 1800 V =10V CE 1500 1200 Ta=75˚C 900 25˚C –25˚C 600 300 0 0.1 0 100 ( mA ) Collector current I C 2SD1030 I — 120 V =10V CE 25˚C 100 Ta=75˚C –25˚ 0.4 0.8 1.2 1.6 2 Base to emitter voltage — I ...