MIG100J7CSB1W TOSHIBA Semiconductor CORPORATION, MIG100J7CSB1W Datasheet

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MIG100J7CSB1W

Manufacturer Part Number
MIG100J7CSB1W
Description
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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High Power Switching Applications
Motor Control Applications
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·
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Equivalent Circuit
MIG100J7CSB1W (600V/100A 7in1)
Integrates inverter, brake power circuit and control circuits (IGBT drive units, and units for protection against
short-circuit current, overcurrent, undervoltage and overtemperature) into a single package.
The electrodes are isolated from the case
Low thermal resistance
V
UL recognized: File No.E87989
Weight: 278 g (typ.)
CE (sat)
15.
1.
8.
= 1.9 V (typ.)
GND (V)
V
Open
D
(U)
16.
2.
9.
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
V
FO (U)
IN (B)
D
(W)
10.
17.
3.
FO (W)
IN (U)
IN (X)
11.
18.
4.
GND (U)
1
IN (W)
IN (Y)
12.
19.
5.
GND (W) 13.
V
IN (Z)
D
(V)
20.
6.
GND (L)
FO (V)
V
D
MIG100J7CSB1W
(L)
14.
7.
2001-11-13
FO (L)
IN (V)

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MIG100J7CSB1W Summary of contents

Page 1

... TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG100J7CSB1W (600V/100A 7in1) High Power Switching Applications Motor Control Applications · Integrates inverter, brake power circuit and control circuits (IGBT drive units, and units for protection against short-circuit current, overcurrent, undervoltage and overtemperature) into a single package. ...

Page 2

... Package Dimensions: TOSHIBA 2-108G1A (V) 8. 13. V (L) 14. D 19. IN (Z) 20 (U) 4. GND (U) GND ( (W) 10 (L) 15. Open 16. IN (B) GND (L) 2 MIG100J7CSB1W Unit ( (V) D 11. IN (W) 12. GND (W) 17. IN (X) 18. IN (Y) 2001-11-13 ...

Page 3

... Signal Terminal Layout (V) 8. 13. V (L) 14. D 19. IN (Z) 20 (U) 4. GND (U) GND ( (W) 10 (L) 15. Open 16. IN (B) GND (L) 3 MIG100J7CSB1W Unit ( (V) D 11. IN (W) 12. GND (W) 17. IN (X) 18. IN (Y) 2001-11-13 ...

Page 4

... 25° 300 100 (on « 25°C, Inductive load off t c (off) 4 MIG100J7CSB1W Symbol Rating Unit V 450 600 V CES I 100 100 590 150 °C ...

Page 5

... D OT Case temperature OTr UV ¾ UVr = Symbol Test Condition Inverter IGBT Inverter FRD R th (j-c) Brake IGBT Brake FRD R Compound is applied th (c-f) 5 MIG100J7CSB1W Min Typ. Max Unit ¾ ¾ ¾ ¾ 10 ¾ 1.8 2.2 V ¾ ¾ 2.0 ¾ ¾ ¾ ...

Page 6

... Waveform C V Waveform 0 GND GND 10% 10 (off) t off 6 MIG100J7CSB1W Intelligent power module P OUT V S GND U ( OUT GND 1 90% 10% 10 (on 2001-11-13 ...

Page 7

... Waveform IN 0 Symbol Test Condition V P-N Power terminal -GND Signal terminal PWM Control Switching time test circuit tdead (See page. dead dead 7 MIG100J7CSB1W Min Typ. Max Unit ¾ 300 400 V 13.5 15 16.5 V ¾ ¾ 20 kHz ¾ ¾ (Note 2) 2001-11-13 ...

Page 8

... MIG100J7CSB1W I – Common emitter Tj = 125° (V) Switching time – ton toff tc (on) tc (off 125° 300 L-Load 40 60 ...

Page 9

... Tj < = 125° 100 Collector-emitter voltage 25°C 0.5 0.3 0.1 0.05 0.03 0.01 0.005 0.003 0.001 10 0.001 9 MIG100J7CSB1W I – ( 25° Carrier frequency f (kHz) c Reverse bias SOA OC 200 300 400 500 600 700 (V) R – tw Brake stage ...

Page 10

... 300 0.05 L-LOAD 0. 25° 125°C 0. Collector current I ( 0.5 0.3 0.1 0.05 0.03 0.01 100 120 MIG100J7CSB1W Turn off loss - 300 L-LOAD : Tj = 25° 125° 100 120 Collector current I (A) C 2001-11-13 ...

Page 11

... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. MIG100J7CSB1W 11 000707EAA 2001-11-13 ...

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